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Dalal FADIL
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引用次数
引用次数
年份
Electrical devices from top-down structured platinum diselenide films
C Yim, V Passi, MC Lemme, GS Duesberg, C Ó Coileáin, E Pallecchi, ...
npj 2D Materials and Applications 2 (1), 5, 2018
932018
On the chemically-assisted excitonic enhancement in environmentally-friendly solution dispersions of two-dimensional MoS 2 and WS 2
D Fadil, RF Hossain, GA Saenz, AB Kaul
Journal of Materials Chemistry C 5 (22), 5323-5333, 2017
482017
A low‐noise high output impedance DC current source
JM Routoure, D Fadil, S Flament, L Méchin
AIP Conference Proceedings 922 (1), 419-424, 2007
192007
Direct observation of magnetization reversal and low field magnetoresistance of epitaxial La0. 7Sr0. 3MnO3/SrTiO3 (001) thin films at room temperature
D Fadil, S Wu, P Perna, B Renault, M Saïb, S Lebargy, J Gasnier, B Guillet, ...
Journal of Applied Physics 112 (1), 2012
182012
2D-graphene epitaxy on SiC for RF application: Fabrication, electrical characterization and noise performance
D Fadil, W Wei, M Deng, S Fregonese, W Strupinski, E Pallecchi, H Happy
2018 IEEE/MTT-S International Microwave Symposium-IMS, 228-231, 2018
122018
Investigation of nonlinear optical properties of exfoliated MoS2 using Photoacoustic Zscan
N Dhasmana, D Fadil, AB Kaul, J Thomas
MRS Advances 1 (47), 3215-3221, 2016
92016
High frequency and noise performance of GFETs
W Wei, D Fadil, E Pallecchi, G Dambrine, H Happy, M Deng, S Fregonese, ...
2017 International Conference on Noise and Fluctuations (ICNF), 1-5, 2017
82017
High-frequency noise characterization and modeling of graphene field-effect transistors
M Deng, D Fadil, W Wei, E Pallecchi, H Happy, G Dambrine, M De Matos, ...
IEEE Transactions on Microwave Theory and Techniques 68 (6), 2116-2123, 2020
72020
A broadband active microwave monolithically integrated circuit balun in graphene technology
D Fadil, V Passi, W Wei, S Ben Salk, D Zhou, W Strupinski, MC Lemme, ...
Applied Sciences 10 (6), 2183, 2020
72020
Graphene FETs based on high resolution nanoribbons for HF low power applications
D Mele, S Mehdhbi, D Fadil, W Wei, A Ouerghi, S Lepilliet, H Happy, ...
Electronic Materials Letters 14, 133-138, 2018
72018
Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena
O Latry, A Divay, D Fadil, P Dherbécourt
Journal of Semiconductors 38 (1), 014007, 2017
62017
Graphene for radio frequency electronics
W Wei, F Dalal, S Fregonese, W Strupinski, E Pallecchi, H Happy
2020 IEEE Latin America Electron Devices Conference (LAEDC), 1-5, 2020
52020
Excitonic Effects in Liquid-Exfoliated Two-Dimensional MoS2 and WS2 and Their Electronic Transport Properties
D Fadil, R Hossain, G Lara, A Kaul
manuscript submitted (unpublished), 2016
42016
Electronic and Optical Properties Characterization of MoS2 Two-Dimensional Exfoliated nanomaterials
D Fadil, RH Fayaz, AB Kaul
MRS Advances 1 (47), 3223-3228, 2016
42016
Low frequency noise in La0.7Sr0.3MnO3 thin films : effects of substrate materials and contact resistance
JM Routoure, L Méchin, D Fadil, C Barone, S Mercone, P Perna, ...
AIP Conference Proceedings 922 (1), 229-232, 2007
42007
Synthesis and characterization of nickel oxide nanoparticles decorated graphene oxide for fast-response UV photodetector: unveiling of negative photoconductance
C Walleni, N Hamdaoui, D Fadil, MF Nsib, E Llobet
Journal of Materials Science: Materials in Electronics 35 (18), 1205, 2024
32024
Photocurrent Generation Mechanisms in Molybdenum‐Contacted Semiconducting Black Phosphorus and Contributions from the Photobolometric Effect
GA Saenz, RK Mehta, D Fadil, AB Kaul
physica status solidi (a) 218 (20), 2100196, 2021
32021
La0. 7Sr0. 3MnO3 Thin Films for Magnetic and Temperature Sensors at Room Temperature
S Wu, D Fadil, S Liu, A Aryan, B Renault, JM Routoure, B Guillet, ...
Sensors & Transducers., p. 253-265, 2012
32012
Direct or Indirect Sonication in Ecofriendly MoS2 Dispersion for NO2 and NH3 Gas-Sensing Applications
D Fadil, J Sharma, MI Rizu, E Llobet
ACS omega, 2024
22024
Fatigue test on flexible graphene field effect transistors with bottom gate electrode
W Wei, D Fadil, S Mhedhbi, S Bensalk, E Pallecchi, H Happy
2018 IEEE/MTT-S International Microwave Symposium-IMS, 348-351, 2018
22018
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