| Universal mechanical exfoliation of large-area 2D crystals Y Huang, YH Pan, R Yang, LH Bao, L Meng, HL Luo, YQ Cai, GD Liu, ... Nature communications 11 (1), 2453, 2020 | 564 | 2020 |
| Photoelectric plasticity in oxide thin film transistors with tunable synaptic functions Q Wu, J Wang, J Cao, C Lu, G Yang, X Shi, X Chuai, Y Gong, Y Su, ... Advanced Electronic Materials 4 (12), 1800556, 2018 | 117 | 2018 |
| Charge Transfer within the F4TCNQ‐MoS2 van der Waals Interface: Toward Electrical Properties Tuning and Gas Sensing Application J Wang, Z Ji, G Yang, X Chuai, F Liu, Z Zhou, C Lu, W Wei, X Shi, J Niu, ... Advanced Functional Materials 28 (51), 1806244, 2018 | 68 | 2018 |
| Spike encoding with optic sensory neurons enable a pulse coupled neural network for ultraviolet image segmentation Q Wu, B Dang, C Lu, G Xu, G Yang, J Wang, X Chuai, N Lu, D Geng, ... Nano Letters 20 (11), 8015-8023, 2020 | 65 | 2020 |
| Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking X Duan, K Huang, J Feng, J Niu, H Qin, S Yin, G Jiao, D Leonelli, X Zhao, ... IEEE Transactions on Electron Devices 69 (4), 2196-2202, 2022 | 63 | 2022 |
| Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals G Yang, Y Shao, J Niu, X Ma, C Lu, W Wei, X Chuai, J Wang, J Cao, ... Nature communications 11 (1), 659, 2020 | 28 | 2020 |
| A dual-functional IGZO-based device with Schottky diode rectifying and resistance switching behaviors Q Wu, C Lu, H Wang, J Cao, G Yang, J Wang, Y Gong, X Shi, X Chuai, ... IEEE Electron Device Letters 40 (1), 24-27, 2018 | 26 | 2018 |
| Room temperature-processed a-IGZO Schottky diode for rectifying circuit and bipolar 1D1R crossbar applications Q Wu, G Yang, C Lu, G Xu, J Wang, B Dang, Y Gong, X Shi, X Chuai, N Lu, ... IEEE Transactions on Electron Devices 66 (9), 4087-4091, 2019 | 25 | 2019 |
| A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications J Cao, S Peng, W Liu, Q Wu, L Li, D Geng, G Yang, Z Ji, N Lu, M Liu Journal of Applied Physics 123 (6), 2018 | 23 | 2018 |
| Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for … K Huang, X Duan, J Feng, Y Sun, C Lu, C Chen, G Jiao, X Lin, J Shao, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 20 | 2022 |
| Bulk‐Like Electrical Properties Induced by Contact‐Limited Charge Transport in Organic Diodes: Revised Space Charge Limited Current G Xu, N Gao, C Lu, W Wang, Z Ji, C Bi, Z Han, N Lu, G Yang, Y Li, Q Liu, ... Advanced Electronic Materials 4 (5), 1700493, 2018 | 19 | 2018 |
| First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, ION=1500 μA/μm@VDS=1V and Retention Time>300s W Lu, Z Zhu, K Chen, M Liu, BM Kang, X Duan, J Niu, F Liao, W Dan, ... 2022 International Electron Devices Meeting (IEDM), 26.4. 1-26.4. 4, 2022 | 16 | 2022 |
| Study of positive-gate-bias-induced hump phenomenon in amorphous indium–gallium–zinc oxide thin-film transistors X Shi, C Lu, X Duan, Q Chen, H Ji, Y Su, X Chuai, D Liu, Y Zhao, G Yang, ... IEEE Transactions on Electron Devices 67 (4), 1606-1612, 2020 | 16 | 2020 |
| A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers J Wang, J Niu, B Shao, G Yang, C Lu, M Li, Z Zhou, X Chuai, J Chen, N Lu, ... Nature Communications 12 (1), 58, 2021 | 15 | 2021 |
| An analytical Seebeck coefficient model for disordered organic semiconductors X Shi, N Lu, G Xu, J Cao, Z Han, G Yang, L Li, M Liu Physics Letters A 381 (40), 3441-3444, 2017 | 14 | 2017 |
| Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly … K Chen, J Niu, G Yang, M Liu, W Lu, F Liao, K Huang, XL Duan, C Lu, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 13 | 2022 |
| Thickness of accumulation layer in amorphous indium-gallium-zinc-oxide thin-film transistors by Kelvin Probe Force Microscopy X Shi, C Lu, G Xu, G Yang, N Lu, Z Ji, D Geng, L Li, M Liu Applied Physics Letters 114 (7), 2019 | 11 | 2019 |
| Analytical surface potential-based compact model for independent dual gate a-IGZO TFT J Guo, Y Zhao, G Yang, X Chuai, W Lu, D Liu, Q Chen, X Duan, S Huang, ... IEEE Transactions on Electron Devices 68 (4), 2049-2055, 2021 | 10 | 2021 |
| Anomalous Positive Bias Stress Instability in MoS2 Transistors With High-Hydrogen-Concentration SiO2 Gate Dielectrics G Yang, X Chuai, J Niu, J Wang, X Shi, Q Wu, Y Su, Y Zhao, D Liu, G Xu, ... IEEE Electron Device Letters 40 (2), 232-235, 2018 | 10 | 2018 |
| A New Velocity Saturation Model of MoS2 Field-Effect Transistors J Cao, W Liu, Q Wu, G Yang, N Lu, Z Ji, D Geng, L Li, M Liu IEEE Electron Device Letters 39 (6), 893-896, 2018 | 10 | 2018 |
