Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films H Yu, M Liao, W Zhao, G Liu, XJ Zhou, Z Wei, X Xu, K Liu, Z Hu, K Deng, ... ACS nano 11 (12), 12001-12007, 2017 | 484 | 2017 |
Argon Plasma Induced Phase Transition in Monolayer MoS2 J Zhu, Z Wang, H Yu, N Li, J Zhang, JL Meng, M Liao, J Zhao, X Lu, L Du, ... Journal of the American Chemical Society 139 (30), 10216-10219, 2017 | 378 | 2017 |
Boundary activated hydrogen evolution reaction on monolayer MoS2 J Zhu, ZC Wang, H Dai, Q Wang, R Yang, H Yu, M Liao, J Zhang, W Chen, ... Nature communications 10 (1), 1-7, 2019 | 330 | 2019 |
Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors N Li, Q Wang, C Shen, Z Wei, H Yu, J Zhao, X Lu, G Wang, C He, L Xie, ... Nature Electronics 3 (11), 711-717, 2020 | 294 | 2020 |
Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors L Xie, M Liao, S Wang, H Yu, L Du, J Tang, J Zhao, J Zhang, P Chen, X Lu, ... Advanced Materials 29 (37), 1702522, 2017 | 264 | 2017 |
Engineering symmetry breaking in 2D layered materials L Du, T Hasan, A Castellanos-Gomez, GB Liu, Y Yao, CN Lau, Z Sun Nature Reviews Physics 3 (3), 193-206, 2021 | 188 | 2021 |
Precise control of the interlayer twist angle in large scale MoS2 homostructures M Liao, Z Wei, L Du, Q Wang, J Tang, H Yu, F Wu, J Zhao, X Xu, B Han, ... Nature communications 11 (1), 2153, 2020 | 181 | 2020 |
Highly dispersive {001} facets-exposed nanocrystalline TiO2 on high quality graphene as a high performance photocatalyst B Liu, Y Huang, Y Wen, L Du, W Zeng, Y Shi, F Zhang, G Zhu, X Xu, ... Journal of Materials Chemistry 22 (15), 7484-7491, 2012 | 175 | 2012 |
UItra-low friction and edge-pinning effect in large-lattice-mismatch van der Waals heterostructures M Liao, P Nicolini, L Du, J Yuan, S Wang, H Yu, J Tang, P Cheng, ... Nature Materials 21 (1), 47-53, 2022 | 139 | 2022 |
Twist angle-dependent conductivities across MoS2/graphene heterojunctions M Liao, ZW Wu, L Du, T Zhang, Z Wei, J Zhu, H Yu, J Tang, L Gu, Y Xing, ... Nature communications 9 (1), 4068, 2018 | 110 | 2018 |
Precisely Aligned Monolayer MoS2 Epitaxially Grown on h‐BN basal Plane H Yu, Z Yang, L Du, J Zhang, J Shi, W Chen, P Chen, M Liao, J Zhao, ... Small 13 (7), 1603005, 2017 | 108 | 2017 |
Lattice Dynamics, Phonon Chirality, and Spin–Phonon Coupling in 2D Itinerant Ferromagnet Fe3GeTe2 L Du, J Tang, Y Zhao, X Li, R Yang, X Hu, X Bai, X Wang, K Watanabe, ... Advanced Functional Materials 29 (48), 1904734, 2019 | 92 | 2019 |
New floating gate memory with excellent retention characteristics S Wang, C He, J Tang, X Lu, C Shen, H Yu, L Du, J Li, R Yang, D Shi, ... Advanced Electronic Materials 5 (4), 1800726, 2019 | 72 | 2019 |
Moiré photonics and optoelectronics L Du, MR Molas, Z Huang, G Zhang, F Wang, Z Sun Science 379 (6639), eadg0014, 2023 | 70 | 2023 |
Rolling Up a Monolayer MoS2 Sheet. J Meng, G Wang, X Li, X Lu, J Zhang, H Yu, W Chen, L Du, M Liao, J Zhao, ... Small (Weinheim an der Bergstrasse, Germany) 12 (28), 3770-3774, 2016 | 67 | 2016 |
Layer-by-layer epitaxy of multi-layer MoS2 wafers Q Wang, J Tang, X Li, J Tian, J Liang, N Li, D Ji, L Xian, Y Guo, L Li, ... National Science Review 9 (6), nwac077, 2022 | 56 | 2022 |
Enhancing and controlling valley magnetic response in MoS2/WS2 heterostructures by all-optical route J Zhang, L Du, S Feng, RW Zhang, B Cao, C Zou, Y Chen, M Liao, ... Nature communications 10 (1), 1-8, 2019 | 47 | 2019 |
Modulating PL and electronic structures of MoS2/graphene heterostructures via interlayer twisting angle L Du, H Yu, M Liao, S Wang, L Xie, X Lu, J Zhu, N Li, C Shen, P Chen, ... Applied Physics Letters 111 (26), 2017 | 47 | 2017 |
Low power flexible monolayer MoS2 integrated circuits J Tang, Q Wang, J Tian, X Li, N Li, Y Peng, X Li, Y Zhao, C He, S Wu, J Li, ... Nature Communications 14 (1), 3633, 2023 | 42 | 2023 |
Robust spin-valley polarization in commensurate /graphene heterostructures L Du, Q Zhang, B Gong, M Liao, J Zhu, H Yu, R He, K Liu, R Yang, D Shi, ... Physical Review B 97 (11), 115445, 2018 | 39 | 2018 |