| Experimental extraction of parasitic capacitances for high-frequency transformers C Liu, L Qi, X Cui, X Wei IEEE Transactions on Power Electronics 32 (6), 4157-4167, 2016 | 66 | 2016 |
| Wideband mechanism model and parameter extracting for high-power high-voltage high-frequency transformers C Liu, L Qi, X Cui, Z Shen, X Wei IEEE Transactions on Power Electronics 31 (5), 3444-3455, 2015 | 58 | 2015 |
| Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor C Liu, YM Zhang, YM Zhang, HL Lü Chinese Physics B 22 (7), 076701, 2013 | 50 | 2013 |
| Bone morphogenetic protein 9 overexpression reduces osteosarcoma cell migration and invasion Z Lv, D Yang, J Li, M Hu, M Luo, X Zhan, P Song, C Liu, H Bai, B Li, ... Molecules and cells 36, 119-126, 2013 | 44 | 2013 |
| TGF-β1 induces peritoneal fibrosis by activating the Smad2 pathway in mesothelial cells and promotes peritoneal carcinomatosis Retraction in/10.3892/ijmm. 2023.5251 ZD Lv, HB Wang, FN Li, L Wu, C Liu, G Nie, B Kong, HL Qu, JG Li International journal of molecular medicine 29 (3), 373-379, 2012 | 37 | 2012 |
| Tumor-associated macrophages-mediated CXCL8 infiltration enhances breast cancer metastasis: Suppression by Danirixin G Nie, X Cao, Y Mao, Z Lv, M Lv, Y Wang, H Wang, C Liu International Immunopharmacology 95, 107153, 2021 | 34 | 2021 |
| Epitaxial fabrication of two-dimensional NiSe2 on Ni (111) substrate Y Shao, S Song, X Wu, J Qi, H Lu, C Liu, S Zhu, Z Liu, J Wang, D Shi, ... Applied Physics Letters 111 (11), 2017 | 32 | 2017 |
| A charge-based capacitance model for double-gate tunnel FETs with closed-form solution B Lu, H Lu, Y Zhang, Y Zhang, X Cui, Z Lv, S Yang, C Liu IEEE Transactions on Electron Devices 65 (1), 299-307, 2017 | 29 | 2017 |
| Fully analytical carrier-based charge and capacitance model for hetero-gate-dielectric tunneling field-effect transistors B Lu, H Lu, Y Zhang, Y Zhang, X Cui, Z Lv, C Liu IEEE Transactions on Electron Devices 65 (8), 3555-3561, 2018 | 21 | 2018 |
| Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition B Lu, H Lv, Y Zhang, Y Zhang, C Liu Superlattices and Microstructures 99, 54-57, 2016 | 21 | 2016 |
| Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO2/p-GaAs metal-oxide-semiconductor capacitors C Liu, YM Zhang, HL Lv Journal of Applied Physics 116 (22), 2014 | 16 | 2014 |
| A terminal capacitance method for analyzing global capacitive effects of magnetic components C Liu, L Qi, X Cui, X Wei IEEE Transactions on Electromagnetic Compatibility 59 (4), 1161-1170, 2017 | 11 | 2017 |
| Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors C Jin, H Lu, Y Zhang, Y Zhang, H Guan, L Wu, B Lu, C Liu Solid-State Electronics 123, 106-110, 2016 | 10 | 2016 |
| Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0. 2Ga0. 8As substrate C Liu, H Lü, T Yang, Y Zhang, Y Zhang, D Liu, Z Ma, W Yu, L Guo Applied Surface Science 444, 474-479, 2018 | 9 | 2018 |
| Improved analytical model of surface potential with modified boundary conditions for double gate tunnel FETs B Lu, H Lu, Y Zhang, Y Zhang, X Cui, C Jin, C Liu Microelectronics Reliability 79, 231-238, 2017 | 6 | 2017 |
| Nanolaminated HfO2 /Al2O3 Dielectrics for High‐Performance Silicon Nanomembrane Based Field‐Effect Transistors on Biodegradable Substrates C Liu, Z Wang, Y Zhang, H Lu, YM Zhang Advanced Materials Interfaces, 2022 | 5 | 2022 |
| Atomic-layer-deposited HfO2/Al2O3 laminated dielectrics for bendable Si nanomembrane based MOS capacitors C Liu, Z Wang, H Lu, Y Zhang, D Liu, YM Zhang, Z Ma, J Zhao, L Guo, ... Applied Physics Letters 114 (14), 2019 | 5 | 2019 |
| A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices MZ Zhijun Lyu, Hongliang Lu, Chen Liu, Yuming Zhang, Yimen Zhang, Yi Zhu ... IEEE Transactions on Electron Devices 69 (10), 5900 - 5905, 2022 | 3 | 2022 |
| Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal–oxide–semiconductor capacitors C Liu, Y Zhang, Y Zhang, H Lü, B Lu Journal of Semiconductors 36 (12), 124003, 2015 | 3 | 2015 |
| Capacitance-Voltage Investigation of HfO2/Al2O3Bilayered High-k Dielectrics on Si Nanomembrane C Liu, Z Wang, Y Zhang, H Lu, J Zhao, Y Zhang, L Guo 2018 International Flexible Electronics Technology Conference (IFETC), 1-2, 2018 | 2 | 2018 |
