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Takashi ONAYA
Takashi ONAYA
在 edu.k.u-tokyo.ac.jp 的电子邮件经过验证
标题
引用次数
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年份
Improvement in ferroelectricity of HfxZr1− xO2 thin films using ZrO2 seed layer
T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Chikyow, A Ogura
Applied Physics Express 10 (8), 081501, 2017
872017
Ferroelectricity of HfxZr1− xO2 thin films fabricated by 300 C low temperature process with plasma-enhanced atomic layer deposition
T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Nagata, A Ogura
Microelectronic Engineering 215, 111013, 2019
762019
Improvement in ferroelectricity of HfxZr1− xO2 thin films using top-and bottom-ZrO2 nucleation layers
T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Nagata, A Ogura
APL Materials 7 (6), 2019
602019
Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1− xO2/ZrO2 bilayer by atomic layer deposition
T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ...
Applied Physics Letters 117 (23), 2020
252020
Improved leakage current properties of ZrO2/(Ta/Nb) Ox-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors
T Onaya, T Nabatame, T Sawada, K Kurishima, N Sawamoto, A Ohi, ...
Thin Solid Films 655, 48-53, 2018
242018
Wake-up-free properties and high fatigue resistance of HfxZr1− xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300° C)
T Onaya, T Nabatame, M Inoue, T Sawada, H Ota, Y Morita
APL Materials 10 (5), 2022
232022
Ferroelectric polarization retention with scaling of Hf0. 5Zr0. 5O2 on silicon
J Mohan, H Hernandez-Arriaga, YC Jung, T Onaya, CY Nam, EHR Tsai, ...
Applied Physics Letters 118 (10), 2021
232021
Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1− xO2 thin films using synchrotron x-ray analysis
T Onaya, T Nabatame, YC Jung, H Hernandez-Arriaga, J Mohan, HS Kim, ...
APL Materials 9 (3), 2021
142021
Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3
R Kobayashi, T Nabatame, K Kurishima, T Onaya, A Ohi, N Ikeda, ...
ECS Transactions 92 (3), 3, 2019
142019
Role of high-k interlayer in ZrO2/high-k/ZrO2 insulating multilayer on electrical properties for DRAM capacitor
T Onaya, T Nabatame, T Sawada, K Kurishima, N Sawamoto, A Ohi, ...
ECS Transactions 75 (8), 667, 2016
142016
Improvement of ferroelectricity and fatigue property of thicker HfxZr1− xO2/ZrO2 bi-layer
T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ...
ECS Transactions 98 (3), 63, 2020
132020
Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
T Sawada, T Nabatame, TD Dao, I Yamamoto, K Kurishima, T Onaya, ...
Journal of Vacuum Science & Technology A 35 (6), 2017
122017
Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3
R Kobayashi, T Nabatame, T Onaya, A Ohi, N Ikeda, T Nagata, ...
Japanese Journal of Applied Physics 60 (3), 030903, 2021
112021
Ferroelectricity of HfxZr1− xO2 thin films fabricated using TiN stressor and ZrO2 nucleation techniques
T Onaya, T Nabatame, N Sawamoto, K Kurishima, A Ohi, N Ikeda, ...
ECS Transactions 86 (6), 31, 2018
112018
Reliability of Al2O3/In-Si-OC Thin-Film Transistors with an Al2O3 Passivation Layer under Gate-Bias Stress
K Kurishima, T Nabatame, T Onaya, K Tsukagoshi, A Ohi, N Ikeda, ...
ECS Transactions 86 (11), 135, 2018
62018
Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1− XO2-Based Metal-Ferroelectric Semiconductor
T Onaya, T Nabatame, M Inoue, T Sawada, H Ota, Y Morita
ECS Transactions 104 (4), 129, 2021
52021
Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors
J Mohan, YC Jung, H Hernandez-Arriaga, JH Kim, T Onaya, A Sahota, ...
ACS Applied Electronic Materials 4 (4), 1405-1414, 2022
42022
Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition
T Nabatame, E Maeda, M Inoue, M Hirose, Y Irokawa, A Ohi, N Ikeda, ...
Journal of Vacuum Science & Technology A 39 (6), 2021
42021
Study of HfO2-Based High-k Gate Insulators for GaN Power Device
T Nabatame, E Maeda, M Inoue, M Hirose, R Ochi, T Sawada, Y Irokawa, ...
ECS transactions 104 (4), 113, 2021
32021
Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1− xO2 thin films
T Onaya, T Nabatame, T Nagata, K Tsukagoshi, J Kim, CY Nam, ...
Solid-State Electronics 210, 108801, 2023
12023
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