| Characterization of dynamic self-heating in GaN HEMTs using gate resistance measurement A Cutivet, F Cozette, M Bouchilaoun, A Chakroun, O Arenas, M Lesecq, ... IEEE Electron Device Letters 38 (2), 240-243, 2016 | 24 | 2016 |
| Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements A Cutivet, G Pavlidis, B Hassan, M Bouchilaoun, C Rodriguez, A Soltani, ... IEEE Transactions on Electron Devices 66 (5), 2139-2145, 2019 | 14 | 2019 |
| Thermal Transient Extraction for GaN HEMTs by Frequency‐Resolved Gate Resistance Thermometry with Sub‐100 ns Time Resolution A Cutivet, M Bouchilaoun, B Hassan, C Rodriguez, A Soltani, F Boone, ... physica status solidi (a) 216 (1), 1800503, 2019 | 7 | 2019 |
| Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors A Cutivet, P Altuntas, N Defrance, E Okada, V Avramovic, M Lesecq, ... 2015 10th European Microwave Integrated Circuits Conference (EuMIC), 93-96, 2015 | 7 | 2015 |
| Thermal Impedance Extraction From Electrical Measurements for Double‐Ended Gate Transistors A Cutivet, M Bouchilaoun, A Chakroun, C Rodriguez, A Soltani, A Jaouad, ... physica status solidi c 14 (11), 1700225, 2017 | 4 | 2017 |
| Caractérisation et modélisation de dispositifs GaN pour la conception de circuits de puissance hyperfréquence A Cutivet Lille 1, 2015 | 1 | 2015 |
| Caractérisation électrique d'une structure passive en hyperfréquence par mesures et modélisation de lignes CPW A Cutivet, A Thevenot, A Chakroun, N Defrance, H Maher, F Boone | | 2014 |
