| Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature X Ding, J Yan, T Li, L Zhang Applied Surface Science 258 (7), 3082-3085, 2012 | 55 | 2012 |
| High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2 Gate Dielectric J Yang, Y Zhang, Q Wu, C Dussarrat, J Qi, W Zhu, X Ding, J Zhang IEEE Transactions on Electron Devices 66 (8), 3382-3386, 2019 | 53 | 2019 |
| A comparison of electronic structure and optical properties between N-doped β-Ga2O3 and N–Zn co-doped β-Ga2O3 L Zhang, J Yan, Y Zhang, T Li, X Ding Physica B: Condensed Matter 407 (8), 1227-1231, 2012 | 46 | 2012 |
| Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes P Shen, X Li, F Cao, X Ding, X Yang Journal of Materials Chemistry C 6 (36), 9642-9648, 2018 | 43 | 2018 |
| Low-temperature combustion synthesis and UV treatment processed p-type Li: NiO x active semiconductors for high-performance electronics J Yang, B Wang, Y Zhang, X Ding, J Zhang Journal of Materials Chemistry C 6 (46), 12584-12591, 2018 | 41 | 2018 |
| First-principles study on electronic structure and optical properties of N-doped P-type β-Ga2O3 LY Zhang, JL Yan, YJ Zhang, T Li, XW Ding Science China Physics, Mechanics and Astronomy 55, 19-24, 2012 | 38 | 2012 |
| Influence of the InGaZnO channel layer thickness on the performance of thin film transistors X Ding, J Zhang, J Li, H Zhang, W Shi, X Jiang, Z Zhang Superlattices and Microstructures 63, 70-78, 2013 | 32 | 2013 |
| Enhanced stability in Zr-doped ZnO TFTs with minor influence on mobility by atomic layer deposition J Yang, Y Zhang, C Qin, X Ding, J Zhang IEEE Transactions on Electron Devices 66 (4), 1760-1765, 2019 | 31 | 2019 |
| The influence of hafnium doping on density of states in zinc oxide thin-film transistors deposited via atomic layer deposition X Ding, C Qin, J Song, J Zhang, X Jiang, Z Zhang Nanoscale research letters 12, 1-7, 2017 | 28 | 2017 |
| IGZO thin film transistors with Al2O3 gate insulators fabricated at different temperatures X Ding, H Zhang, J Zhang, J Li, W Shi, X Jiang, Z Zhang Materials Science in Semiconductor Processing 29, 69-75, 2015 | 26 | 2015 |
| Nitrogen-doped ZnO film fabricated via rapid low-temperature atomic layer deposition for high-performance ZnON transistors X Ding, J Yang, C Qin, X Yang, T Ding, J Zhang IEEE Transactions on Electron Devices 65 (8), 3283-3290, 2018 | 25 | 2018 |
| Effect of O2 plasma treatment on density-of-states in a-IGZO thin film transistors X Ding, F Huang, S Li, J Zhang, X Jiang, Z Zhang Electronic Materials Letters 13, 45-50, 2017 | 25 | 2017 |
| Solution-processed yttrium-doped IZTO semiconductors for high-stability thin film transistor applications Y Zhang, H Zhang, J Yang, X Ding, J Zhang IEEE Transactions on Electron Devices 66 (12), 5170-5176, 2019 | 24 | 2019 |
| Performance enhancement in InZnO thin-film transistors with compounded ZrO2–Al2O3 nanolaminate as gate insulators J Zhang, X Ding, J Li, H Zhang, X Jiang, Z Zhang Ceramics International 42 (7), 8115-8119, 2016 | 24 | 2016 |
| Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator X Ding, H Zhang, H Ding, J Zhang, C Huang, W Shi, J Li, X Jiang, Z Zhang Superlattices and Microstructures 76, 156-162, 2014 | 24 | 2014 |
| Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness J Li, XW Ding, JH Zhang, H Zhang, XY Jiang, ZL Zhang Aip Advances 3 (10), 2013 | 20 | 2013 |
| Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors X Ding, J Zhang, W Shi, H Ding, H Zhang, J Li, X Jiang, Z Zhang, C Fu Materials Science in Semiconductor Processing 29, 326-330, 2015 | 19 | 2015 |
| Effect of SiO2 buffer layer thickness on the properties of ITO/Cu/ITO multilayer films deposited on polyethylene terephthalate substrates X Ding, J Yan, T Li, L Zhang Vacuum 86 (4), 443-447, 2011 | 19 | 2011 |
| ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor X Ding, J Zhang, H Zhang, H Ding, C Huang, J Li, W Shi, X Jiang, Z Zhang Microelectronics Reliability 54 (11), 2401-2405, 2014 | 18 | 2014 |
| Extraction of density-of-states in amorphous InGaZnO thin-film transistors from temperature stress studies X Ding, J Zhang, W Shi, H Zhang, C Huang, J Li, X Jiang, Z Zhang Current Applied Physics 14 (12), 1713-1717, 2014 | 16 | 2014 |
