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Zefei Wu(吴泽飞)
Zefei Wu(吴泽飞)
University of Manchester, Hong Kong University of Science & Technology
在 manchester.ac.uk 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
High quality sandwiched black phosphorus heterostructure and its quantum oscillations
X Chen, Y Wu, Z Wu, S Xu, L Wang, Y Han, W Ye, T Han, Y He, Y Cai, ...
Nature communications 6, 7315, 2015
5642015
Achieving ultrahigh carrier mobility in two-dimensional hole gas of black phosphorus
G Long, D Maryenko, J Shen, S Xu, J Hou, Z Wu, WK Wong, T Han, J Lin, ...
Nano letters 16 (12), 7768-7773, 2016
3002016
Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures
X Chen, Z Wu, S Xu, L Wang, R Huang, Y Han, W Ye, W Xiong, T Han, ...
Nature communications 6 (1), 1-8, 2015
2272015
Oxygen‐Assisted Charge Transfer Between ZnO Quantum Dots and Graphene
W Guo, S Xu, Z Wu, N Wang, MMT Loy, S Du
Small 9 (18), 3031-3036, 2013
2172013
Interfacial ferroelectricity in marginally twisted 2D semiconductors
A Weston, EG Castanon, V Enaldiev, F Ferreira, S Bhattacharjee, S Xu, ...
Nature Nanotechnology 17 (4), 390-395, 2022
1952022
Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
Shuigang Xu, Zefei Wu, Huanhuan Lu, Yu Han, Gen Long, Xiaolong Chen, Tianyi ...
2D Materials 3 (2), 021007, 2016
1362016
Isolation and Characterization of Few-Layer Manganese Thiophosphite
G Long, T Zhang, X Cai, J Hu, C Cho, S Xu, J Shen, Z Wu, T Han, J Lin, ...
ACS nano 11 (11), 11330-11336, 2017
1142017
Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides
Zefei Wu, Shuigang Xu, Huanhuan Lu, Armin Khamoshi, Gui-Bin Liu, Tianyi Han ...
Nature Communications 7, 12955, 2016
1102016
Intrinsic valley Hall transport in atomically thin MoS
Z Wu, BT Zhou, X Cai, P Cheung, GB Liu, M Huang, J Lin, T Han, L An, ...
Nature communications 10, 611, 2019
1062019
Twin Defect Derived Growth of Atomically Thin MoS2 Dendrites
J Wang, X Cai, R Shi, Z Wu, W Wang, G Long, Y Tang, N Cai, W Ouyang, ...
ACS nano 12 (1), 635-643, 2018
1002018
A reliable way of mechanical exfoliation of large scale two dimensional materials with high quality
L Yuan, J Ge, X Peng, Q Zhang, Z Wu, Y Jian, X Xiong, H Yin, J Han
AIP Advances 6 (12), 125201, 2016
942016
Interaction effects and superconductivity signatures in twisted double-bilayer WSe
L An, X Cai, D Pei, M Huang, Z Wu, Z Zhou, J Lin, Z Ying, Z Ye, X Feng, ...
Nanoscale Horizons 5 (9), 1309-1316, 2020
832020
van der Waals Epitaxial Growth of Atomically Thin Bi2Se3 and Thickness-Dependent Topological Phase Transition
S Xu, Y Han, X Chen, Z Wu, L Wang, T Han, W Ye, H Lu, G Long, Y Wu, ...
Nano letters 15 (4), 2645-2651, 2015
682015
Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p-Type Few-Layer WSe2
Shuigang Xu, Junying Shen, Gen Long, Zefei Wu, Zhi-qiang Bao, Cheng-Cheng ...
Phys. Rev. Lett. 118 (6), 067702, 2017
602017
Shape-Dependent Defect Structures of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition
G Zhang, J Wang, Z Wu, R Shi, W Ouyang, A Amini, BN Chandrashekar, ...
ACS Applied Materials & Interfaces, 2016
532016
Giant nonlinear Hall effect in twisted bilayer WSe2
M Huang#, Z Wu#*, J Hu#, X Cai, E Li, L An, X Feng, Z Ye, N Lin, KT Law*, ...
National Science Review 10 (4), nwac232, 2023
502023
Determining Interaction Enhanced Valley Susceptibility in Spin-Valley-Locked MoS2
J Lin, T Han, B Piot, Z Wu, S Xu, G Long, L An, P Cheung, PP Zheng, ...
Nano letters 19 (3), 1736-1742, 2019
462019
Single‐Crystalline Vanadium Dioxide Actuators
R Shi, X Cai, W Wang, J Wang, D Kong, N Cai, P Chen, P He, Z Wu, ...
Advanced Functional Materials 29 (20), 1900527, 2019
452019
Strained Epitaxy of Monolayer Transition Metal Dichalcogenides for Wrinkle Arrays
J Wang, M Han, Q Wang, Y Ji, X Zhang, R Shi, Z Wu, L Zhang, A Amini, ...
ACS nano 15 (4), 6633-6644, 2021
422021
Electrically tunable physical properties of two-dimensional materials
X Chen, Z Zhou, B Deng, Z Wu, F Xia, Y Cao, L Zhang, W Huang, N Wang, ...
Nano Today 27, 99-119, 2019
422019
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