| STT-MRAM with double magnetic tunnel junctions G Hu, JH Lee, JJ Nowak, JZ Sun, J Harms, A Annunziata, S Brown, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.3. 1-26.3. 4, 2015 | 98 | 2015 |
| Structure and method to reduce shorting in STT-MRAM device AJ Annunziata, GP Lauer, NP Marchack US Patent 9,502,640, 2016 | 81 | 2016 |
| Scalable nanostructured carbon electrode arrays for enhanced dopamine detection S Demuru, L Nela, N Marchack, SJ Holmes, DB Farmer, GS Tulevski, ... ACS sensors 3 (4), 799-805, 2018 | 62 | 2018 |
| Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications G Hu, JJ Nowak, MG Gottwald, SL Brown, B Doris, CP D’Emic, P Hashemi, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.6. 1-2.6. 4, 2019 | 53 | 2019 |
| Perspectives in nanoscale plasma etching: what are the ultimate limits? N Marchack, JP Chang Journal of Physics D: Applied Physics 44 (17), 174011, 2011 | 52 | 2011 |
| Area selective atomic layer deposition by microcontact printing with a water-soluble polymer MN Mullings, HBR Lee, N Marchack, X Jiang, Z Chen, Y Gorlin, KP Lin, ... Journal of The Electrochemical Society 157 (12), D600-D604, 2010 | 36 | 2010 |
| Chemical processing of materials on silicon: more functionality, smaller features, and larger wafers N Marchack, JP Chang Annual review of chemical and biomolecular engineering 3, 235-262, 2012 | 22 | 2012 |
| Plasma processing for advanced microelectronics beyond CMOS N Marchack, L Buzi, DB Farmer, H Miyazoe, JM Papalia, H Yan, G Totir, ... Journal of Applied Physics 130 (8), 2021 | 21 | 2021 |
| Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400° C-compatible p-MTJs G Hu, MG Gottwald, Q He, JH Park, G Lauer, JJ Nowak, SL Brown, ... 2017 IEEE International Electron Devices Meeting (IEDM), 38.3. 1-38.3. 4, 2017 | 21 | 2017 |
| Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processes H Miyazoe, N Marchack, RL Bruce, Y Zhu, M Nakamura, E Miller, ... Journal of Vacuum Science & Technology B 36 (3), 2018 | 17 | 2018 |
| Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective K Ishikawa, T Ishijima, T Shirafuji, S Armini, E Despiau-Pujo, RA Gottscho, ... Japanese Journal of Applied Physics 58 (SE), SE0801, 2019 | 14 | 2019 |
| Nitride etching with hydrofluorocarbons. II. Evaluation of C4H9F for tight pitch Si3N4 patterning applications N Marchack, H Miyazoe, RL Bruce, H Tsai, M Nakamura, T Suzuki, A Ito, ... Journal of Vacuum Science & Technology B 36 (3), 2018 | 13 | 2018 |
| Spin torque MRAM fabrication using negative tone lithography and ion beam etching AJ Annunziata, AA Galan, S Holmes, EA Joseph, GP Lauer, Q Lin, ... US Patent 9,705,077, 2017 | 13 | 2017 |
| Monolithically integrated silicon photonic chip sensor for near-infrared trace-gas spectroscopy EJ Zhang, Y Martin, JS Orcutt, C Xiong, M Glodde, N Marchack, EA Duch, ... Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing …, 2019 | 12 | 2019 |
| Low-current spin transfer torque MRAM G Hu, JJ Nowak, G Lauer, JH Lee, JZ Sun, J Harms, A Annunziata, ... 2017 International Symposium on VLSI Design, Automation and Test (VLSI-DAT), 1-2, 2017 | 12 | 2017 |
| Ultrahigh-Q on-chip silicon–germanium microresonators R Schilling, C Xiong, S Kamlapurkar, A Falk, N Marchack, S Bedell, ... Optica 9 (3), 284-287, 2022 | 10 | 2022 |
| Enhanced coercivity in MTJ devices by contact depth control AJ Annunziata, GP Lauer, NP Marchack US Patent 9,660,179, 2017 | 10* | 2017 |
| Low degradation MRAM encapsulation process using silicon-rich silicon nitride film AJ Annunziata, C Kothandaraman, GP Lauer, JH Lee, NP Marchack, ... US Patent 9,515,252, 2016 | 10 | 2016 |
| Control of surface oxide formation in plasma-enhanced quasiatomic layer etching of tantalum nitride N Marchack, J Innocent-Dolor, M Hopstaken, S Engelmann Journal of Vacuum Science & Technology A 38 (2), 2020 | 9 | 2020 |
| Utilizing surface modification in plasma‐enhanced cyclic etching of tantalum nitride to surpass lithographic limits N Marchack, K Hernandez, B Walusiak, J Innocent‐Dolor, S Engelmann Plasma Processes and Polymers, e1900008, 2019 | 9 | 2019 |
Anthony J. AnnunziataIBM Research在 us.ibm.com 的电子邮件经过验证
