| 226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection D Liu, SJ Cho, J Park, J Gong, JH Seo, R Dalmau, D Zhao, K Kim, M Kim, ... Applied physics letters 113 (1), 2018 | 88 | 2018 |
| 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection D Liu, SJ Cho, J Park, JH Seo, R Dalmau, D Zhao, K Kim, J Gong, M Kim, ... Applied Physics Letters 112 (8), 2018 | 74 | 2018 |
| Lattice-mismatched semiconductor heterostructures D Liu, SJ Cho, JH Seo, K Kim, M Kim, J Shi, X Yin, W Choi, C Zhang, ... arXiv preprint arXiv:1812.10225, 2018 | 30 | 2018 |
| Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs SJ Cho, D Liu, A Hardy, J Kim, J Gong, CJ Herrera-Rodriguez, E Swinnich, ... AIP Advances 10 (12), 2020 | 29 | 2020 |
| P-type silicon as hole supplier for nitride-based UVC LEDs SJ Cho, D Liu, JH Seo, R Dalmau, K Kim, J Park, J Gong, D Zhao, F Wang, ... New Journal of Physics 21 (2), 023011, 2019 | 23 | 2019 |
| Reduction of leakage current in GaN Schottky diodes through ultraviolet/ozone plasma treatment K Kim, D Liu, J Gong, Z Ma IEEE Electron Device Letters 40 (11), 1796-1799, 2019 | 21 | 2019 |
| AlGaN/GaN Schottky-gate HEMTs With UV/O₃-treated gate interface K Kim, TJ Kim, H Zhang, D Liu, YH Jung, J Gong, Z Ma IEEE Electron Device Letters 41 (10), 1488-1491, 2020 | 18 | 2020 |
| Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements J Gong, Z Zheng, D Vincent, J Zhou, J Kim, D Kim, TK Ng, BS Ooi, ... Journal of Applied Physics 132 (13), 2022 | 12 | 2022 |
| Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs D Liu, SJ Cho, H Zhang, CR Carlos, ARK Kalapala, J Park, J Kim, ... AIP Advances 9 (8), 2019 | 12 | 2019 |
| Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN J Gong, K Lu, J Kim, TK Ng, D Kim, J Zhou, D Liu, J Kim, BS Ooi, Z Ma Japanese Journal of Applied Physics 61 (1), 011003, 2021 | 11 | 2021 |
| Metal-Al2O3-GaN capacitors with an ultraviolet/ozone plasma-treated interface K Kim, J Kim, J Gong, D Liu, Z Ma Japanese Journal of Applied Physics 59 (3), 030908, 2020 | 10 | 2020 |
| Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes J Gong, J Zhou, P Wang, TH Kim, K Lu, S Min, R Singh, M Sheikhi, ... Advanced Electronic Materials 9 (5), 2201309, 2023 | 9 | 2023 |
| Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 npn double heterojunctions J Zhou, A Dheenan, J Gong, C Adamo, P Marshall, M Sheikhi, TH Tsai, ... arXiv preprint arXiv:2308.06575, 2023 | 5 | 2023 |
| 0.86 kV p-Si/(001)-Ga2O3 heterojunction diode S Xie, MT Alam, J Gong, Q Lin, M Sheikhi, J Zhou, F Alema, A Osinsky, ... IEEE Electron Device Letters, 2024 | 4 | 2024 |
| Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting J Gong, D Kim, H Jang, F Alema, Q Wang, TK Ng, S Qiu, J Zhou, X Su, ... arXiv preprint arXiv:2305.19138, 2023 | 4 | 2023 |
| Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements S Qiu, J Gong, J Zhou, TK Ng, R Singh, M Sheikhi, BS Ooi, Z Ma AIP Advances 13 (5), 2023 | 4 | 2023 |
| Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) pn heterojunction determined by X-ray photoelectron spectroscopy J Gong, J Zhou, A Dheenan, M Sheikhi, F Alema, TK Ng, SS Pasayat, ... Applied Surface Science 655, 159615, 2024 | 3 | 2024 |
| Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 pn heterojunction J Zhou, J Gong, M Sheikhi, A Dheenan, Q Wang, H Abbasi, Y Liu, ... Applied Surface Science 663, 160176, 2024 | 2 | 2024 |
| Low contact-resistivity and high-uniformity Ni/Au ohmic contacts on Si nanomembranes grafted to Si substrates via low-temperature rapid thermal annealing J Kim, J Gong, W Lin, S Lal, X Su, D Vincent, SJ Cho, J Zhou, S Min, ... Materials Science in Semiconductor Processing 151, 106988, 2022 | 2 | 2022 |
| Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors J Gong, J Kim, TK Ng, K Lu, D Kim, J Zhou, D Liu, J Kim, BS Ooi, Z Ma arXiv, 2021 | 2 | 2021 |
