| A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor K Aumaille, C Vallée, A Granier, A Goullet, F Gaboriau, G Turban Thin Solid Films 359 (2), 188-196, 2000 | 186 | 2000 |
| New polymer materials for nanoimprinting H Schulz, HC Scheer, T Hoffmann, CM Sotomayor Torres, K Pfeiffer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 117 | 2000 |
| Selective and deep plasma etching of Comparison between different fluorocarbon gases mixed with or and influence of the … F Gaboriau, G Cartry, MC Peignon, C Cardinaud Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 73 | 2002 |
| Studies on antibacterial dressings obtained by fluorinated post-discharge plasma C Canal, F Gaboriau, S Villeger, U Cvelbar, A Ricard International journal of pharmaceutics 367 (1-2), 155-161, 2009 | 71 | 2009 |
| Oxygen plasma functionalization of poly (p-phenilene sulphide) U Cvelbar, M Mozetič, I Junkar, A Vesel, J Kovač, A Drenik, T Vrlinič, ... Applied surface science 253 (21), 8669-8673, 2007 | 68 | 2007 |
| Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy F Gaboriau, G Cartry, MC Peignon, C Cardinaud Journal of Physics D: Applied Physics 39 (9), 1830, 2006 | 65 | 2006 |
| Role of the active species of plasmas involved in the modification of textile materials C Canal, F Gaboriau, R Molina, P Erra, A Ricard Plasma Processes and Polymers 4 (4), 445-454, 2007 | 54 | 2007 |
| Modeling and experimental study of molecular nitrogen dissociation in an Ar–N2 ICP discharge N Kang, F Gaboriau, S Oh, A Ricard Plasma Sources Science and Technology 20 (4), 045015, 2011 | 49 | 2011 |
| Novel linear and crosslinking polymers for nanoimprinting with high etch resistance K Pfeiffer, M Fink, G Bleidiessel, G Gruetzner, H Schulz, HC Scheer, ... Microelectronic engineering 53 (1-4), 411-414, 2000 | 45 | 2000 |
| Etching mechanisms of Si and SiO2 in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching F Gaboriau, MC Fernandez-Peignon, G Cartry, C Cardinaud Journal of Vacuum Science & Technology A 23 (2), 226-233, 2005 | 44 | 2005 |
| Comparison of TALIF and catalytic probes for the determination of nitrogen atom density in a nitrogen plasma afterglow F Gaboriau, U Cvelbar, M Mozetic, A Erradi, B Rouffet Journal of Physics D: Applied Physics 42 (5), 055204, 2009 | 43 | 2009 |
| Chemical kinetics of low pressure high density hydrogen plasmas: application to negative ion sources for ITER F Gaboriau, JP Boeuf Plasma Sources Science and Technology 23 (6), 065032, 2014 | 38 | 2014 |
| Density of O-atoms in an afterglow reactor during treatment of wool C Canal, F Gaboriau, A Ricard, M Mozetic, U Cvelbar, A Drenik Plasma Chemistry and Plasma Processing 27, 404-413, 2007 | 34 | 2007 |
| Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of SiO 2 F Gaboriau, MC Peignon, G Cartry, L Rolland, D Eon, C Cardinaud, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (3 …, 2002 | 27 | 2002 |
| High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography F Gaboriau, MC Peignon, A Barreau, G Turban, C Cardinaud, K Pfeiffer, ... Microelectronic engineering 53 (1-4), 501-505, 2000 | 27 | 2000 |
| Topographical and Wettability Effects of Post‐Discharge Plasma Treatments on Macroporous Polystyrene‐Divinylbenzene Solid Foams C Canal, F Gaboriau, A Vilchez, P Erra, MJ Garcia‐Celma, J Esquena Plasma processes and polymers 6 (10), 686-692, 2009 | 26 | 2009 |
| Pressure dependence of the nitrogen atom recombination probability in late afterglows B Rouffet, F Gaboriau, JP Sarrette Journal of Physics D: Applied Physics 43 (18), 185203, 2010 | 22 | 2010 |
| Optical spectroscopy to control a plasma reactor for surface treatments A Ricard, F Gaboriau, C Canal Surface and Coatings Technology 202 (22-23), 5220-5224, 2008 | 21 | 2008 |
| Production of N, H, O, and C atoms in flowing microwave discharges A Ricard, C Jaoul, F Gaboriau, N Gherardi, S Villeger Surface and Coatings Technology 188, 287-293, 2004 | 21 | 2004 |
| Simple modelling of the E–H mode transition and hysteresis in low pressure argon ICP discharges for direct comparison with experiments N Kang, F Gaboriau Journal of Physics D: Applied Physics 44 (44), 442001, 2011 | 18 | 2011 |
