| FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability D Nagy, G Indalecio, AJ Garcia-Loureiro, MA Elmessary, K Kalna, ... IEEE Journal of the Electron Devices Society 6, 332-340, 2018 | 214 | 2018 |
| Outdoor evaluation of concentrator photovoltaic systems modules from different manufacturers: first results and steps EF Fernández, P Pérez‐Higueras, AJ Garcia Loureiro, PG Vidal Progress in Photovoltaics: Research and Applications 21 (4), 693-701, 2013 | 100 | 2013 |
| Benchmarking of FinFET, nanosheet, and nanowire FET architectures for future technology nodes D Nagy, G Espineira, G Indalecio, AJ Garcia-Loureiro, K Kalna, N Seoane IEEE Access 8, 53196-53202, 2020 | 83 | 2020 |
| A two subcell equivalent solar cell model for III–V triple junction solar cells under spectrum and temperature variations EF Fernández, G Siefer, F Almonacid, AJG Loureiro, P Pérez-Higueras Solar Energy 92, 221-229, 2013 | 80 | 2013 |
| Implementation of the density gradient quantum corrections for 3-D simulations of multigate nanoscaled transistors AJ Garcia-Loureiro, N Seoane, M Aldegunde, R Valin, A Asenov, ... IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2011 | 78 | 2011 |
| Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs FinFET N Seoane, G Indalecio, E Comesana, M Aldegunde, AJ Garcia-Loureiro, ... IEEE Transactions on Electron Devices 61 (2), 466-472, 2013 | 61 | 2013 |
| Temperature coefficients of monolithic III-V triple-junction solar cells under different spectra and irradiance levels EF Fernández, G Siefer, M Schachtner, AJ García Loureiro, ... AIP conference proceedings 1477 (1), 189-193, 2012 | 53 | 2012 |
| Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI C Sampedro, F Gámiz, A Godoy, R Valin, A Garcia-Loureiro, FG Ruiz Solid-State Electronics 54 (2), 131-136, 2010 | 53 | 2010 |
| Multijunction Concentrator Solar Cells: Analysis and Fundamentals EF Fernández, AJ García-Loureiro, GP Smestad High Concentrator Photovoltaics: Fundamentals, Engineering and Power Plants …, 2015 | 50 | 2015 |
| 3D finite element Monte Carlo simulations of multigate nanoscale transistors M Aldegunde, AJ García-Loureiro, K Kalna IEEE transactions on electron devices 60 (5), 1561-1567, 2013 | 49 | 2013 |
| Quantum corrections based on the 2-D Schrödinger equation for 3-D finite element Monte Carlo simulations of nanoscaled FinFETs J Lindberg, M Aldegunde, D Nagy, WG Dettmer, K Kalna, ... IEEE Transactions on Electron Devices 61 (2), 423-429, 2014 | 47 | 2014 |
| Benchmarking of scaled InGaAs implant-free nanoMOSFETs K Kalna, N Seoane, AJ Garcia-Loureiro, IG Thayne, A Asenov IEEE transactions on electron devices 55 (9), 2297-2306, 2008 | 47 | 2008 |
| Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs N Seoane, G Indalecio, M Aldegunde, D Nagy, MA Elmessary, ... IEEE Transactions on Electron Devices 63 (3), 1209-1216, 2016 | 45 | 2016 |
| Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations MA Elmessary, D Nagy, M Aldegunde, N Seoane, G Indalecio, J Lindberg, ... Solid-State Electronics 128, 17-24, 2017 | 43 | 2017 |
| Impact of series and shunt resistances in amorphous silicon thin film solar cells M Fortes, E Comesana, JA Rodriguez, P Otero, AJ Garcia-Loureiro Solar Energy 100, 114-123, 2014 | 42 | 2014 |
| Impact of gate edge roughness variability on FinFET and gate-all-around nanowire FET G Espineira, D Nagy, G Indalecio, AJ Garcia-Loureiro, K Kalna, N Seoane IEEE Electron Device Letters 40 (4), 510-513, 2019 | 35 | 2019 |
| Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs N Seoane, JG Fernandez, K Kalna, E Comesana, A Garcia-Loureiro IEEE Electron Device Letters 42 (10), 1416-1419, 2021 | 34 | 2021 |
| Monolithic III-V triple-junction solar cells under different temperatures and spectra EF Fernández, AJGG Loureiro, PJPP Higueras, G Siefer Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 1-4, 2011 | 32 | 2011 |
| Study of metal-gate work-function variation using Voronoi cells: Comparison of Rayleigh and gamma distributions G Indalecio, AJ Garcia-Loureiro, NS Iglesias, K Kalna IEEE Transactions on Electron Devices 63 (6), 2625-2628, 2016 | 31 | 2016 |
| Metal grain granularity study on a gate-all-around nanowire FET D Nagy, G Indalecio, AJ Garcia-Loureiro, MA Elmessary, K Kalna, ... IEEE Transactions on Electron Devices 64 (12), 5263-5269, 2017 | 29 | 2017 |
