| The new nitrides: Layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system D Jena, R Page, J Casamento, P Dang, J Singhal, Z Zhang, J Wright, ... Japanese Journal of Applied Physics 58 (SC), SC0801, 2019 | 93 | 2019 |
| Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures J Singhal, R Chaudhuri, A Hickman, V Protasenko, HG Xing, D Jena APL Materials 10 (11), 2022 | 26 | 2022 |
| N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates E Kim, Z Zhang, J Encomendero, J Singhal, K Nomoto, A Hickman, ... Applied Physics Letters 122 (9), 2023 | 21 | 2023 |
| A detailed investigation of strain patterning effect on bilayer InAs/GaAs quantum dot with varying GaAs barrier thickness B Tongbram, N Sehara, J Singhal, DP Panda, S Chakrabarti Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII …, 2016 | 15 | 2016 |
| Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning Z Zhang, Y Hayashi, T Tohei, A Sakai, V Protasenko, J Singhal, H Miyake, ... Science Advances 8 (36), eabo6408, 2022 | 14 | 2022 |
| In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors R Chaudhuri, A Hickman, J Singhal, J Casamento, HG Xing, D Jena physica status solidi (a) 219 (4), 2100452, 2022 | 14 | 2022 |
| Magnetic properties of MBE grown Mn4N on MgO, SiC, GaN and Al2O3 substrates Z Zhang, Y Cho, J Singhal, X Li, P Dang, H Lee, J Casamento, Y Tang, ... AIP Advances 10 (1), 2020 | 13 | 2020 |
| Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure B Tongbram, A Ahmad, S Sengupta, A Mandal, J Singhal, A Balgarkashi, ... Journal of Luminescence 192, 89-97, 2017 | 13 | 2017 |
| High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0. 85Ga0. 15N heterostructures on single-crystal AlN substrates Z Zhang, J Encomendero, E Kim, J Singhal, YJ Cho, K Nomoto, M Toita, ... Applied Physics Letters 121 (8), 2022 | 11 | 2022 |
| Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates J Singhal, J Encomendero, Y Cho, L van Deurzen, Z Zhang, K Nomoto, ... AIP Advances 12 (9), 2022 | 10 | 2022 |
| Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates Z Zhang, J Singhal, S Agrawal, E Kim, V Protasenko, M Toita, HG Xing, ... Applied Physics Letters 122 (21), 2023 | 7 | 2023 |
| Photo-induced electronic properties in single quantum well system: effect of excitonic lifetime J Patwari, H Ghadi, S Sardar, J Singhal, B Tongbram, S Shyamal, ... Materials Research Express 4 (1), 016301, 2017 | 6 | 2017 |
| Excitonic and deep-level emission from N-and Al-polar homoepitaxial AlN grown by molecular beam epitaxy L van Deurzen, J Singhal, J Encomendero, N Pieczulewski, CS Chang, ... APL Materials 11 (8), 2023 | 5 | 2023 |
| AlN/AlGaN/AlN quantum well channel HEMTs J Singhal, E Kim, A Hickman, R Chaudhuri, Y Cho, HG Xing, D Jena Applied Physics Letters 122 (22), 2023 | 5 | 2023 |
| Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques P Dang, Z Zhang, J Casamento, X Li, J Singhal, DG Schlom, DC Ralph, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019 | 5 | 2019 |
| Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy Z Zhang, Y Cho, M Gong, ST Ho, J Singhal, J Encomendero, X Li, H Lee, ... IEEE Transactions on Magnetics 58 (2), 1-6, 2021 | 4 | 2021 |
| RF operation of AlN/Al0. 25Ga0. 75N/AlN HEMTs with f T/f max of 67/166 GHz E Kim, J Singhal, A Hickman, L Li, R Chaudhuri, Y Cho, JCM Hwang, ... Applied Physics Express 16 (11), 111003, 2023 | 1 | 2023 |
| Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning Z Zhang, Y Hayashi, T Tohei, A Sakai, V Protasenko, J Singhal, H Miyake, ... arXiv preprint arXiv:2204.08604, 2022 | 1 | 2022 |
| Unified ballistic transport relation for anisotropic dispersions and generalized dimensions J Singhal, D Jena Physical Review Research 2 (4), 043413, 2020 | 1 | 2020 |
| Diffusion impact on thermal stability in self-assembled bilayer InAs/GaAs quantum dots (QDs) B Tongbram, N Sehara, J Singhal, D Das, DP Panda, S Chakrabarti Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII …, 2016 | 1 | 2016 |
Debdeep JenaCornell University在 cornell.edu 的电子邮件经过验证
