| Residual metallic contamination of transferred chemical vapor deposited graphene G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ... ACS nano 9 (5), 4776-4785, 2015 | 315 | 2015 |
| Impact of Temperature on the Resistive Switching Behavior of Embedded -Based RRAM Devices C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ... IEEE transactions on electron devices 58 (9), 3124-3131, 2011 | 275 | 2011 |
| Model for the Resistive Switching Effect in MIM Structures Based on the Transmission Properties of Narrow Constrictions EA Miranda, C Walczyk, C Wenger, T Schroeder IEEE Electron Device Letters 31 (6), 609-611, 2010 | 215 | 2010 |
| Multilevel HfO2-based RRAM devices for low-power neuromorphic networks V Milo, C Zambelli, P Olivo, E Pérez, M K Mahadevaiah, O G Ossorio, ... APL materials 7 (8), 2019 | 171 | 2019 |
| Filament growth and resistive switching in hafnium oxide memristive devices S Dirkmann, J Kaiser, C Wenger, T Mussenbrock ACS applied materials & interfaces 10 (17), 14857-14868, 2018 | 143 | 2018 |
| Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ... Journal of Applied Physics 105 (11), 2009 | 138 | 2009 |
| Magnetic penetration depth and condensate density of cuprate high- superconductors determined by muon-spin-rotation experiments C Bernhard, C Niedermayer, U Binninger, A Hofer, C Wenger, JL Tallon, ... Physical Review B 52 (14), 10488, 1995 | 134 | 1995 |
| Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ... Journal of Applied Physics 113 (1), 2013 | 116 | 2013 |
| Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices SU Sharath, S Vogel, L Molina‐Luna, E Hildebrandt, C Wenger, J Kurian, ... Advanced Functional Materials 27 (32), 1700432, 2017 | 115 | 2017 |
| Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM S Roy, G Niu, Q Wang, Y Wang, Y Zhang, H Wu, S Zhai, P Shi, S Song, ... ACS applied materials & interfaces 12 (9), 10648-10656, 2020 | 93 | 2020 |
| Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance G Niu, P Calka, M Auf der Maur, F Santoni, S Guha, M Fraschke, ... Scientific reports 6 (1), 25757, 2016 | 92 | 2016 |
| Structure and thermal stability of graded Ta–TaN diffusion barriers between Cu and SiO2 R Hübner, M Hecker, N Mattern, V Hoffmann, K Wetzig, C Wenger, ... Thin Solid Films 437 (1-2), 248-256, 2003 | 87 | 2003 |
| Titanium-added praseodymium silicate high-k layers on Si (001) T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ... Applied Physics Letters 87 (2), 2005 | 86 | 2005 |
| Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ... Microelectronic Engineering 214, 104-109, 2019 | 80 | 2019 |
| Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells D Walczyk, C Walczyk, T Schroeder, T Bertaud, M Sowińska, M Lukosius, ... Microelectronic Engineering 88 (7), 1133-1135, 2011 | 80 | 2011 |
| Accurate program/verify schemes of resistive switching memory (RRAM) for in-memory neural network circuits V Milo, A Glukhov, E Pérez, C Zambelli, N Lepri, MK Mahadevaiah, ... IEEE Transactions on Electron Devices 68 (8), 3832-3837, 2021 | 76 | 2021 |
| Electronic properties of graphene/p-silicon Schottky junction G Luongo, A Di Bartolomeo, F Giubileo, CA Chavarin, C Wenger Journal of Physics D: Applied Physics 51 (25), 255305, 2018 | 75 | 2018 |
| Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors C Wenger, G Lupina, M Lukosius, O Seifarth, HJ Müssig, S Pasko, C Lohe Journal of Applied Physics 103 (10), 2008 | 71 | 2008 |
| Interface-engineered reliable HfO 2-based RRAM for synaptic simulation Q Wang, G Niu, S Roy, Y Wang, Y Zhang, H Wu, S Zhai, W Bai, P Shi, ... Journal of Materials Chemistry C 7 (40), 12682-12687, 2019 | 69 | 2019 |
| Impact of intercell and intracell variability on forming and switching parameters in RRAM arrays A Grossi, D Walczyk, C Zambelli, E Miranda, P Olivo, V Stikanov, A Feriani, ... IEEE Transactions on Electron Devices 62 (8), 2502-2509, 2015 | 69 | 2015 |
