The optoelectronic role of chlorine in CH3NH3PbI3(Cl)-based perovskite solar cells Q Chen, H Zhou, Y Fang, AZ Stieg, TB Song, HH Wang, X Xu, Y Liu, S Lu, ... Nature communications 6 (1), 7269, 2015 | 509 | 2015 |
Improving the TiO 2 electron transport layer in perovskite solar cells using acetylacetonate-based additives HH Wang, Q Chen, H Zhou, L Song, Z St Louis, N De Marco, Y Fang, ... Journal of Materials Chemistry A 3 (17), 9108-9115, 2015 | 126 | 2015 |
A 30-GHz CMOS SOI outphasing power amplifier with current mode combining for high backoff efficiency and constant envelope operation K Ning, Y Fang, N Hosseinzadeh, JF Buckwalter IEEE Journal of Solid-State Circuits 55 (5), 1411-1421, 2019 | 46 | 2019 |
100-340ghz systems: Transistors and applications MJW Rodwell, Y Fang, J Rode, J Wu, B Markman, STŠ Brunelli, J Klamkin, ... 2018 IEEE International Electron Devices Meeting (IEDM), 14.3. 1-14.3. 4, 2018 | 38 | 2018 |
nm InAs Channel MOSFETs Exhibiting GHz and GHz J Wu, Y Fang, B Markman, HY Tseng, MJW Rodwell IEEE Electron Device Letters 39 (4), 472-475, 2018 | 31 | 2018 |
A 140-GHz Power Amplifier in a 250-nm InP Process with 32% PAE K Ning, Y Fang, M Rodwell, J Buckwalter | 30 | 2020 |
Transistors for 100-300GHz Wireless M Rodwell, B Markman, Y Fang, L Whitaker, HY Tseng, ASH Ahmed ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 3 | 2021 |
Atomic layer deposition of TiN/Ru gate in InP MOSFETs HY Tseng, Y Fang, WJ Mitchell, AA Taylor, MJW Rodwell Applied Physics Letters 119 (12), 2021 | 2 | 2021 |
InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting Base Contact Resistivity Y Fang, HY Tseng, MJW Rodwell 2019 Device Research Conference (DRC), 179-180, 2019 | 2 | 2019 |
Regrown Extrinsic Base InP HBT with Sub-100nm Emitter Contact Y Fang University of California, Santa Barbara, 2021 | 1 | 2021 |
InP MOSFETs exhibiting record 70 mV/DEC subthreshold swing HY Tseng, Y Fang, S Zhong, MJW Rodwell 2019 Device Research Conference (DRC), 183-184, 2019 | 1 | 2019 |
Monte Carlo Investigation of Traveling Accumulation Layers in InP Heterojunction Bipolar Transistor Power Amplifiers JP Sculley, B Markman, U Soylu, Y Fang, ME Urteaga, AD Carter, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | | 2019 |
First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors JP Sculley, Y Fang, B Markman, ME Urteaga, AD Carter, MJW Rodwell, ... 2019 Device Research Conference (DRC), 105-106, 2019 | | 2019 |
Development of a High Power Density Millimeter-Wave InP HBT Technology M Urteaga, A Carter, Y Fang, B Markman, M Rodwell, J Sculley, P Yoder 2019 GOMACTech, 2019 | | 2019 |
Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τcfor Large Power Bandwidth Power Amplifiers Y Fang, JP Sculley, ME Urteaga, AD Carter, PD Yoder, MJW Rodwell 2018 76th Device Research Conference (DRC), 1-2, 2018 | | 2018 |
90nm Emitter Width InGaAs/InP DHBTs with DC Current Gain β > 40 Y Fang, HY Tseng, HW Chiang, B Markman, M Rodwell 2018 Lester Eastman Conference, 2018 | | 2018 |
PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0058825 HY Tseng, Y Fang, WJ Mitchell, AA Taylor, MJW Rodwell | | |