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YIHAO FANG
YIHAO FANG
Electrical Engineering, UCSB
在 ucsb.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
The optoelectronic role of chlorine in CH3NH3PbI3(Cl)-based perovskite solar cells
Q Chen, H Zhou, Y Fang, AZ Stieg, TB Song, HH Wang, X Xu, Y Liu, S Lu, ...
Nature communications 6 (1), 7269, 2015
5092015
Improving the TiO 2 electron transport layer in perovskite solar cells using acetylacetonate-based additives
HH Wang, Q Chen, H Zhou, L Song, Z St Louis, N De Marco, Y Fang, ...
Journal of Materials Chemistry A 3 (17), 9108-9115, 2015
1262015
A 30-GHz CMOS SOI outphasing power amplifier with current mode combining for high backoff efficiency and constant envelope operation
K Ning, Y Fang, N Hosseinzadeh, JF Buckwalter
IEEE Journal of Solid-State Circuits 55 (5), 1411-1421, 2019
462019
100-340ghz systems: Transistors and applications
MJW Rodwell, Y Fang, J Rode, J Wu, B Markman, STŠ Brunelli, J Klamkin, ...
2018 IEEE International Electron Devices Meeting (IEDM), 14.3. 1-14.3. 4, 2018
382018
nm InAs Channel MOSFETs Exhibiting GHz and GHz
J Wu, Y Fang, B Markman, HY Tseng, MJW Rodwell
IEEE Electron Device Letters 39 (4), 472-475, 2018
312018
A 140-GHz Power Amplifier in a 250-nm InP Process with 32% PAE
K Ning, Y Fang, M Rodwell, J Buckwalter
302020
Transistors for 100-300GHz Wireless
M Rodwell, B Markman, Y Fang, L Whitaker, HY Tseng, ASH Ahmed
ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021
32021
Atomic layer deposition of TiN/Ru gate in InP MOSFETs
HY Tseng, Y Fang, WJ Mitchell, AA Taylor, MJW Rodwell
Applied Physics Letters 119 (12), 2021
22021
InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting Base Contact Resistivity
Y Fang, HY Tseng, MJW Rodwell
2019 Device Research Conference (DRC), 179-180, 2019
22019
Regrown Extrinsic Base InP HBT with Sub-100nm Emitter Contact
Y Fang
University of California, Santa Barbara, 2021
12021
InP MOSFETs exhibiting record 70 mV/DEC subthreshold swing
HY Tseng, Y Fang, S Zhong, MJW Rodwell
2019 Device Research Conference (DRC), 183-184, 2019
12019
Monte Carlo Investigation of Traveling Accumulation Layers in InP Heterojunction Bipolar Transistor Power Amplifiers
JP Sculley, B Markman, U Soylu, Y Fang, ME Urteaga, AD Carter, ...
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
2019
First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors
JP Sculley, Y Fang, B Markman, ME Urteaga, AD Carter, MJW Rodwell, ...
2019 Device Research Conference (DRC), 105-106, 2019
2019
Development of a High Power Density Millimeter-Wave InP HBT Technology
M Urteaga, A Carter, Y Fang, B Markman, M Rodwell, J Sculley, P Yoder
2019 GOMACTech, 2019
2019
Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τcfor Large Power Bandwidth Power Amplifiers
Y Fang, JP Sculley, ME Urteaga, AD Carter, PD Yoder, MJW Rodwell
2018 76th Device Research Conference (DRC), 1-2, 2018
2018
90nm Emitter Width InGaAs/InP DHBTs with DC Current Gain β > 40
Y Fang, HY Tseng, HW Chiang, B Markman, M Rodwell
2018 Lester Eastman Conference, 2018
2018
PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0058825
HY Tseng, Y Fang, WJ Mitchell, AA Taylor, MJW Rodwell
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