| The dawn of Ga2O3 HEMTs for high power electronics-A review R Singh, TR Lenka, DK Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen Materials Science in Semiconductor Processing 119, 105216, 2020 | 125 | 2020 |
| Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays HQT Bui, RT Velpula, B Jain, OH Aref, HD Nguyen, TR Lenka, ... Micromachines 10 (8), 492, 2019 | 66 | 2019 |
| High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes B Jain, RT Velpula, HQT Bui, HD Nguyen, TR Lenka, TK Nguyen, ... Optics Express 28 (1), 665-675, 2020 | 54 | 2020 |
| Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure RT Velpula, B Jain, HQT Bui, FM Shakiba, J Jude, M Tumuna, HD Nguyen, ... Applied Optics 59 (17), 5276-5281, 2020 | 33 | 2020 |
| Epitaxial growth and characterization of AlInN-based core-shell nanowire light emitting diodes operating in the ultraviolet spectrum RT Velpula, B Jain, MR Philip, HD Nguyen, R Wang, HPT Nguyen Scientific reports 10 (1), 1-10, 2020 | 31 | 2020 |
| A novel β‐Ga2O3 HEMT with fT of 166 GHz and X‐band POUT of 2.91 W/mm R Singh, TR Lenka, RT Velpula, B Jain, HQT Bui, HPT Nguyen International Journal of Numerical Modelling: Electronic Networks, Devices …, 2021 | 28 | 2021 |
| Enhancing the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with photonic crystal structures B Jain, RT Velpula, M Tumuna, HQT Bui, J Jude, TT Pham, AV Hoang, ... Optics Express 28 (15), 22908-22918, 2020 | 21 | 2020 |
| Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study DK Panda, R Singh, TR Lenka, TT Pham, RT Velpula, B Jain, HQT Bui, ... IET Circuits, Devices & Systems 14 (7), 1018-1025, 2020 | 19 | 2020 |
| Multilevel Resistive Switching in Hf-Based RRAM B Jain, C Huang, D Misra, K Tapily, RD Clark, S Consiglio, CS Wajda, ... ECS Transactions 89 (3), 39, 2019 | 19 | 2019 |
| Numerical investigation on the device performance of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes RT Velpula, B Jain, HQT Bui, TT Pham, HD Nguyen, TR Lenka, ... Optical Materials Express 10 (2), 472-483, 2020 | 18 | 2020 |
| High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure RT Velpula, B Jain, S Velpula, HD Nguyen, HPT Nguyen Optics Letters 45 (18), 5125-5128, 2020 | 17 | 2020 |
| High-performance nanowire ultraviolet light-emitting diodes with potassium hydroxide and ammonium sulfide surface passivation HQT Bui, RT Velpula, B Jian, MR Philip, HD Tong, TR Lenka, ... Applied Optics 59 (24), 7352-7356, 2020 | 17 | 2020 |
| Enhanced Hole Transport in AlGaN Deep Ultraviolet Light-Emitting Diodes Using Double-Sided Step Graded Superlattice Electron Blocking Layer B Jain, RT Velpula, S Velpula, HD Nguyen, H Nguyen Journal of the Optical Society of America B 37 (8), 2020 | 15 | 2020 |
| Improved performance of electron blocking layer free algan deep ultraviolet light-emitting diodes using graded staircase barriers B Jain, RT Velpula, M Patel, SM Sadaf, HPT Nguyen Micromachines 12 (3), 334, 2021 | 9 | 2021 |
| Full-Color III-Nitride Nanowire Light-Emitting Diodes RT Velpula, B Jain, HQT Bui, HPT Nguyen Journal of Advanced Engineering and Computation 3 (4), 551-588, 2019 | 9 | 2019 |
| Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices RT Velpula, B Jain, HPT Nguyen Nanotechnology 34 (7), 075201, 2022 | 8 | 2022 |
| Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology S Das, TR Lenka, FA Talukdar, RT Velpula, B Jain, HPT Nguyen, G Crupi Engineering Research Express 4 (1), 015030, 2022 | 7 | 2022 |
| Enhancing Efficiency of AlGaN Ultraviolet‐B Light‐Emitting Diodes with Graded p‐AlGaN Hole Injection Layer HQT Bui, HA Dang, TT Doan, RT Velpula, B Jain, HPT Nguyen, ... physica status solidi (a) 218 (15), 2100003, 2021 | 7 | 2021 |
| Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes B Jain, RT Velpula, M Patel, HPT Nguyen Applied Optics 60 (11), 3088-3093, 2021 | 7 | 2021 |
| Polarization-engineered p-type electron-blocking-layer-free III-nitride deep-ultraviolet light-emitting diodes for enhanced carrier transport RT Velpula, B Jain, TR Lenka, R Wang, HPT Nguyen Journal of Electronic Materials 51 (2), 838-846, 2022 | 6 | 2022 |
Hieu Pham Trung NguyenTexas Tech University在 ttu.edu 的电子邮件经过验证
