| Evolution of octupole correlations in XC Chen, J Zhao, C Xu, H Hua, TM Shneidman, SG Zhou, XG Wu, XQ Li, ... Physical Review C 94 (2), 021301, 2016 | 22 | 2016 |
| Improved model for ionization-induced surface recombination current in pnp BJTs L Li, XC Chen, Y Jian, Z Li, Y Wu, J Zhang, M Ren, B Zhang, XL Wu, ... IEEE Transactions on Nuclear Science 67 (8), 1826-1834, 2020 | 15 | 2020 |
| Experimental study on displacement damage effects of anode-short MOS-controlled thyristor L Li, ZH Li, M Ren, JJ Li, GX Yang, XC Chen, XQ Liu, Y Jian, JM Shi IEEE Transactions on Nuclear Science 67 (3), 508-517, 2020 | 10 | 2020 |
| Analytical model for total ionizing dose-induced excess base current in PNP BJTs L Li, XC Chen, XJ Li, ZH Li, Y Jian, YZ Wu, JP Zhang, M Ren, B Zhang Microelectronics Reliability 113, 113939, 2020 | 8 | 2020 |
| A study on ionization damage effects of anode-short MOS-controlled thyristor L Li, Z Li, XC Chen, Y Wu, J Zhang, M Ren, B Zhang, Y Pang, XL Wu IEEE Transactions on Nuclear Science 67 (9), 2062-2072, 2020 | 8 | 2020 |
| Observation of a novel stapler band in 75As CG Li, QB Chen, SQ Zhang, C Xu, H Hua, XQ Li, XG Wu, SP Hu, J Meng, ... Physics Letters B 766, 107-111, 2017 | 6 | 2017 |
| Modeling the displacement damage on trigger current of anode-short MOS-controlled thyristor L Li, ZH Li, YZ Wu, XC Chen, JP Zhang, M Ren, Y Jian, B Zhang IEEE Journal of the Electron Devices Society 8, 1043-1049, 2020 | 4 | 2020 |
| Ionization radiation-induced base current decreasing and narrowing effects in gated bipolar transistors L Li, XC Chen, C Xiong, G Zeng, XQ Liu, GX Yang, Y Jian, ZH Li IEEE Transactions on Nuclear Science 69 (7), 1733-1746, 2022 | 3 | 2022 |
| Modeling the ionization damage on excess base current in pnp BJTs for circuit-level simulation L Li, XC Chen, Y Jian, XQ Liu, ZH Li, G Zeng, GX Yang IEEE Transactions on Nuclear Science 68 (8), 2220-2231, 2021 | 3 | 2021 |
| Theoretical studies on intrinsic electron traps in strained amorphous silica L Li, X Chen, X Wu, X Liu, G Zeng, G Yang, Y Jian Journal of Non-Crystalline Solids 613, 122396, 2023 | 2 | 2023 |
| First principle studies on properties of silicon-vacancy related defects in amorphous silica L Li, X Chen, H Zhou, G Zeng, X Liu, G Yang, Y Jian Journal of Non-Crystalline Solids 594, 121799, 2022 | 2 | 2022 |
| Experimental Investigation on Displacement Damage Effects of Trench Field-Stop Reverse-Conducting Insulated-Gate Bipolar Transistor L Li, XC Chen, XQ Liu, G Zeng, XL Wu, Y Jian, GX Yang, ZH Li IEEE Transactions on Nuclear Science 69 (9), 2065-2073, 2022 | 2 | 2022 |
| Metastable acceptors in boron doped silicon: evidence of the defects contributing to carrier induced degradation X Chen, L Li, J Zhang, Y Jian, G Yang, X Liu, G Zeng, Y Pang, X Yu, ... Journal of Physics D: Applied Physics 54 (26), 265103, 2021 | 2 | 2021 |
| Investigation on γ radiation effects of N-channel VDMOSFETs irradiated without electric field stress G Zeng, X Liu, G Yang, L Li, X Chen, Y Jian, S Zhu, Y Pang Microelectronics Reliability 116, 114019, 2021 | 2 | 2021 |
| Ionization damage effects of pulse discharge circuit switched by anode-short MOS-controlled thyristor L Li, ZH Li, JP Zhang, YZ Wu, XC Chen, B Zhang, Y Jian IEEE Journal of the Electron Devices Society 8, 1096-1104, 2020 | 2 | 2020 |
| Experimental investigation into impacts of neutron irradiation on pMOS dosimeter behaviors L Li, X Chen, X Liu, G Zeng, G Yang, Z Li, Y Jian Radiation Measurements 161, 106911, 2023 | 1 | 2023 |
| Displacement Damage Effects of Pulse Discharge Circuit Switched by Anode-Short MOS-Controlled Thyristor L Li, XC Chen, G Zeng, XQ Liu, Y Jian, GX Yang, ZH Li IEEE Transactions on Nuclear Science 69 (3), 609-619, 2022 | 1 | 2022 |
| Spectroscopy of : Structure evolution in the isotones XQ Li, C Xu, SQ Zhang, H Hua, J Meng, RA Bark, QB Chen, CY Niu, ... Physical Review C 94 (2), 024337, 2016 | 1 | 2016 |
| Deep-learning Model for Buildup of Ionization Defects in Bipolar Junction Transistors L Li, XC Chen, GX Yang IEEE Transactions on Nuclear Science, 2023 | | 2023 |
