| Using gate leakage conduction to understand positive gate bias induced threshold voltage shift in p-GaN gate HEMTs SW Tang, B Bakeroot, ZH Huang, SC Chen, WS Lin, TC Lo, M Borga, ... IEEE Transactions on Electron Devices 70 (2), 449-453, 2022 | 18 | 2022 |
| High threshold voltage enhancement-mode regrown p-GaN gate HEMTs with a robust forward time-dependent gate breakdown stability SW Tang, ZH Huang, SC Chen, WS Lin, B De Jaeger, D Wellekens, ... IEEE Electron Device Letters 43 (10), 1625-1628, 2022 | 18 | 2022 |
| Capacitance-Dependent VTH Instability Under a High dVg/dt Event in p-GaN Power HEMTs SW Tang, WS Lin, ZH Huang, TL Wu IEEE Electron Device Letters 43 (10), 1617-1620, 2022 | 7 | 2022 |
| Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structures WC Lin, WC Yu, BR Chen, YS Hsiao, ZH Huang, CL Hung, YK Hsiao, ... Microelectronics Reliability 150, 115141, 2023 | 6 | 2023 |
| Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations ZH Huang, SW Tang, CT Fan, MC Lin, TL Wu Microelectronics Reliability 145, 114983, 2023 | 6 | 2023 |
| Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors SK Singh, BR Chen, ZH Huang, TL Wu, YS Chauhan IEEE Transactions on Electron Devices, 2023 | 4 | 2023 |
| Industry perspective on power electronics for electric vehicles CC Tu, CL Hung, KB Hong, S Elangovan, WC Yu, YS Hsiao, WC Lin, ... Nature Reviews Electrical Engineering, 1-18, 2024 | 3 | 2024 |
| Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process SW Tang, ZH Huang, YC Chen, CH Wu, PH Lin, ZC Chen, MH Lu, ... Microelectronics Reliability 122, 114150, 2021 | 3 | 2021 |
| Ultra-Fast Positive Gate Bias Stress (< 100ns) to Understand the Hole Injection in Power p-GaN HEMTs ZH Huang, WS Lin, TC Lo, SW Tang, SC Chen, D Wellekens, M Borga, ... 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 2 | 2023 |
| 1.2 kV 4H-SiC VDMOSFETs with Si-implanted surface: performance enhancement and reliability evaluation JW Hu, JY Jiang, PW Huang, CF Huang, SW Tang, ZH Huang, TL Wu, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 2 | 2021 |
| Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode WS Lin, B Bakeroot, ZH Huang, TC Lo, M Borga, D Wellekens, ... IEEE Transactions on Electron Devices, 2024 | 1 | 2024 |
| Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs ZH Huang, CH Chang, WS Lin, TC Lo, YC Ching, YJ Huang, RC Hwang, ... 2023 IEEE International Symposium on the Physical and Failure Analysis of …, 2023 | 1 | 2023 |
| 200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability ZH Huang, CH Chang, TC Lo, YT Lee, CH Lu, HE Wang, YH Tsai, ... 2024 36th International Symposium on Power Semiconductor Devices and ICs …, 2024 | | 2024 |
| A Novel Gate Driver with Charge Sharing Technique to Optimize Gate Turn-On/Turn-Off Overshoot and Switching Loss Trade-off in SiC Power MOSFETs YS Hsiao, WC Yu, C Sung, WC Lin, YK Hsiao, CL Hung, ZH Huang, ... 2024 36th International Symposium on Power Semiconductor Devices and ICs …, 2024 | | 2024 |
| Investigation of time-dependent gate dielectric breakdown in recessed E-mode GaN MIS-HEMTs using ferroelectric charge trap gate stack (FEG-HEMT) ZH Huang, TY Yang, JS Wu, YK Liang, JF Hsu, WC Lin, TL Wu, EY Chang Microelectronics Reliability 150, 115215, 2023 | | 2023 |
| Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability JO Gallardo, S Dash, TN Tran, ZH Huang, SW Tang, D Wellekens, ... Microelectronics Reliability 134, 114568, 2022 | | 2022 |
Tian-Li Wu 吳添立National Yang Ming Chiao Tung University; NYCU WLab在 nycu.edu.tw 的电子邮件经过验证
