| A global-shutter CMOS image sensor with readout speed of 1-Tpixel/s burst and 780-Mpixel/s continuous Y Tochigi, K Hanzawa, Y Kato, R Kuroda, H Mutoh, R Hirose, H Tominaga, ... IEEE Journal of Solid-State Circuits 48 (1), 329-338, 2013 | 161 | 2013 |
| Atomically flat silicon surface and silicon/insulator interface formation technologies for (100) surface orientation large-diameter wafers introducing high performance and low … R Kuroda, T Suwa, A Teramoto, R Hasebe, S Sugawa, T Ohmi IEEE transactions on electron devices 56 (2), 291-298, 2009 | 83 | 2009 |
| Revolutional progress of silicon technologies exhibiting very high speed performance over a 50-GHz clock rate T Ohmi, A Teramoto, R Kuroda, N Miyamoto IEEE transactions on electron devices 54 (6), 1471-1477, 2007 | 67 | 2007 |
| Impact of improved high-performance Si (110)-oriented metal–oxide–semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices W Cheng, A Teramoto, M Hirayama, S Sugawa, T Ohmi Japanese journal of applied physics 45 (4S), 3110, 2006 | 59 | 2006 |
| A linear response single exposure CMOS image sensor with 0.5e−readout noise and 76ke−full well capacity S Wakashima, F Kusuhara, R Kuroda, S Sugawa 2015 Symposium on VLSI Circuits (VLSI Circuits), C88-C89, 2015 | 47 | 2015 |
| Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface R Kuroda, A Teramoto, Y Nakao, T Suwa, M Konda, R Hasebe, X Li, ... Japanese Journal of Applied Physics 48 (4S), 04C048, 2009 | 44 | 2009 |
| A highly ultraviolet light sensitive and highly robust image sensor technology based on flattened Si surface R Kuroda, S Kawada, S Nasuno, T Nakazawa, Y Koda, K Hanzawa, ... ITE Transactions on Media Technology and Applications 2 (2), 123-130, 2014 | 41 | 2014 |
| Analysis of source follower random telegraph signal using nMOS and pMOS array TEG K Abe, S Sugawa, R Kuroda, S Watabe, N Miyamoto, A Teramoto, T Ohmi, ... Int’l Image Sensor Workshop, 62-65, 2007 | 39 | 2007 |
| Atomically Flattening Technology at 850ºC for Si (100) Surface X Li, T Suwa, A Teramoto, R Kuroda, S Sugawa, T Ohmi ECS Transactions 28 (1), 299, 2010 | 38 | 2010 |
| A dead-time free global shutter CMOS image sensor with in-pixel LOFIC and ADC using pixel-wis e connections H Sugo, S Wakashima, R Kuroda, Y Yamashita, H Sumi, TJ Wang, ... 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits), 1-2, 2016 | 37 | 2016 |
| Statistical analysis of random telegraph noise reduction effect by separating channel from the interface A Yonezawa, A Teramoto, R Kuroda, H Suzuki, S Sugawa, T Ohmi 2012 IEEE International Reliability Physics Symposium (IRPS), 3B. 5.1-3B. 5.7, 2012 | 35 | 2012 |
| An over 120 dB single exposure wide dynamic range CMOS image sensor with two-stage lateral overflow integration capacitor Y Fujihara, M Murata, S Nakayama, R Kuroda, S Sugawa IEEE transactions on electron devices 68 (1), 152-157, 2020 | 31 | 2020 |
| A statistical evaluation of random telegraph noise of in-pixel source follower equivalent surface and buried channel transistors R Kuroda, A Yonezawa, A Teramoto, TL Li, Y Tochigi, S Sugawa IEEE transactions on electron devices 60 (10), 3555-3561, 2013 | 30 | 2013 |
| Over 100 million frames per second 368 frames global shutter burst CMOS image sensor with pixel-wise trench capacitor memory array M Suzuki, Y Sugama, R Kuroda, S Sugawa Sensors 20 (4), 1086, 2020 | 29 | 2020 |
| Pixel structure with 10 nsec fully charge transfer time for the 20m frame per second burst CMOS image sensor K Miyauchi, T Takeda, K Hanzawa, Y Tochigi, S Sakai, R Kuroda, ... Image Sensors and Imaging Systems 2014 9022, 15-26, 2014 | 27 | 2014 |
| A 20Mfps global shutter CMOS image sensor with improved light sensitivity and power consumption performances R Kuroda, Y Tochigi, K Miyauchi, T Takeda, H Sugo, F Shao, S Sugawa ITE Transactions on Media Technology and Applications 4 (2), 149-154, 2016 | 26 | 2016 |
| An over 1Mfps global shutter CMOS image sensor with 480 frame storage using vertical analog memory integration M Suzuki, R Kuroda, Y Kumagai, A Chiba, N Miura, N Kuriyama, ... 2016 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2016 | 25 | 2016 |
| Analysis and reduction of floating diffusion capacitance components of CMOS image sensor for photon-countable sensitivity F Kusuhara, S Wakashima, S Nasuno, R Kuroda, S Sugawa Proc. Int. Image Sens. Workshop, 120-123, 2015 | 25 | 2015 |
| HDR CMOS image sensors for automotive applications I Takayanagi, R Kuroda IEEE Transactions on Electron Devices 69 (6), 2815-2823, 2022 | 24 | 2022 |
| Influence of silicon wafer surface roughness on semiconductor device characteristics K Mori, S Samata, N Mitsugi, A Teramoto, R Kuroda, T Suwa, ... Japanese Journal of Applied Physics 59 (SM), SMMB06, 2020 | 24 | 2020 |
