CsPbX3 Quantum Dots for Lighting and Displays: Room‐Temperature Synthesis, Photoluminescence Superiorities, Underlying Origins and White Light‐Emitting … X Li, Y Wu, S Zhang, B Cai, Y Gu, J Song, H Zeng Advanced Functional Materials 26 (15), 2435-2445, 2016 | 2337 | 2016 |
50‐Fold EQE Improvement up to 6.27% of Solution‐Processed All‐Inorganic Perovskite CsPbBr3 QLEDs via Surface Ligand Density Control J Li, L Xu, T Wang, J Song, J Chen, J Xue, Y Dong, B Cai, Q Shan, B Han, ... Advanced materials 29 (5), 1603885, 2017 | 1196 | 2017 |
In Situ Passivation of PbBr64– Octahedra toward Blue Luminescent CsPbBr3 Nanoplatelets with Near 100% Absolute Quantum Yield Y Wu, C Wei, X Li, Y Li, S Qiu, W Shen, B Cai, Z Sun, D Yang, Z Deng, ... ACS Energy Letters 3 (9), 2030-2037, 2018 | 438 | 2018 |
Antimonene oxides: emerging tunable direct bandgap semiconductor and novel topological insulator S Zhang, W Zhou, Y Ma, J Ji, B Cai, SA Yang, Z Zhu, Z Chen, H Zeng Nano letters 17 (6), 3434-3440, 2017 | 285 | 2017 |
Efficient and bright white light-emitting diodes based on single-layer heterophase halide perovskites J Chen, J Wang, X Xu, J Li, J Song, S Lan, S Liu, B Cai, B Han, JT Precht, ... Nature Photonics 15 (3), 238-244, 2021 | 263 | 2021 |
Double-protected all-inorganic perovskite nanocrystals by crystalline matrix and silica for triple-modal anti-counterfeiting codes L Xu, J Chen, J Song, J Li, J Xue, Y Dong, B Cai, Q Shan, B Han, H Zeng ACS applied materials & interfaces 9 (31), 26556-26564, 2017 | 252 | 2017 |
A bilateral interfacial passivation strategy promoting efficiency and stability of perovskite quantum dot light-emitting diodes L Xu, J Li, B Cai, J Song, F Zhang, T Fang, H Zeng Nature communications 11 (1), 3902, 2020 | 243 | 2020 |
A promising two-dimensional solar cell donor: Black arsenic–phosphorus monolayer with 1.54 eV direct bandgap and mobility exceeding 14,000 cm2 V− 1 s− 1 M Xie, S Zhang, B Cai, Y Huang, Y Zou, B Guo, Y Gu, H Zeng Nano Energy 28, 433-439, 2016 | 229 | 2016 |
Shining emitter in a stable host: design of halide perovskite scintillators for X-ray imaging from commercial concept F Cao, D Yu, W Ma, X Xu, B Cai, YM Yang, S Liu, L He, Y Ke, S Lan, ... ACS nano 14 (5), 5183-5193, 2019 | 228 | 2019 |
GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass Y Hu, S Zhang, S Sun, M Xie, B Cai, H Zeng Applied Physics Letters 107 (12), 2015 | 184 | 2015 |
Hydrogenated arsenenes as planar magnet and Dirac material S Zhang, Y Hu, Z Hu, B Cai, H Zeng Applied Physics Letters 107 (2), 2015 | 176 | 2015 |
Advances of 2D bismuth in energy sciences X Liu, S Zhang, S Guo, B Cai, SA Yang, F Shan, M Pumera, H Zeng Chemical Society Reviews 49 (1), 263-285, 2020 | 155 | 2020 |
Efficient blue perovskite light‐emitting diodes boosted by 2D/3D energy cascade channels F Zhang, B Cai, J Song, B Han, B Zhang, H Zeng Advanced Functional Materials 30 (27), 2001732, 2020 | 142 | 2020 |
Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain S Zhang, M Xie, B Cai, H Zhang, Y Ma, Z Chen, Z Zhu, Z Hu, H Zeng Physical Review B 93 (24), 245303, 2016 | 141 | 2016 |
Boosting Charge Transport in BiVO4 Photoanode for Solar Water Oxidation Y Lu, Y Yang, X Fan, Y Li, D Zhou, B Cai, L Wang, K Fan, K Zhang Advanced Materials 34 (8), 2108178, 2022 | 140 | 2022 |
Two‐dimensional metal halide perovskites: theory, synthesis, and optoelectronics C Huo, B Cai, Z Yuan, B Ma, H Zeng Small Methods 1 (3), 1600018, 2017 | 139 | 2017 |
Two-dimensional BX (X= P, As, Sb) semiconductors with mobilities approaching graphene M Xie, S Zhang, B Cai, Z Zhu, Y Zou, H Zeng Nanoscale 8 (27), 13407-13413, 2016 | 139 | 2016 |
Two-dimensional GeS with tunable electronic properties via external electric field and strain S Zhang, N Wang, S Liu, S Huang, W Zhou, B Cai, M Xie, Q Yang, X Chen, ... Nanotechnology 27 (27), 274001, 2016 | 116 | 2016 |
Stable, Efficient Red Perovskite Light‐Emitting Diodes by (α, δ)‐CsPbI3 Phase Engineering B Han, B Cai, Q Shan, J Song, J Li, F Zhang, J Chen, T Fang, Q Ji, X Xu, ... Advanced Functional Materials 28 (47), 1804285, 2018 | 115 | 2018 |
Two-dimensional SiP: an unexplored direct band-gap semiconductor S Zhang, S Guo, Y Huang, Z Zhu, B Cai, M Xie, W Zhou, H Zeng 2D Materials 4 (1), 015030, 2016 | 102 | 2016 |