| Enhanced dielectric and ferroelectric characteristics in Ca-modified BaTiO3 ceramics XN Zhu, W Zhang, XM Chen Aip Advances 3 (8), 2013 | 86 | 2013 |
| Enhanced energy storage density and its variation tendency in CaZrxTi1− xO3 ceramics HY Zhou, XN Zhu, GR Ren, XM Chen Journal of Alloys and Compounds 688, 687-691, 2016 | 51 | 2016 |
| Piezoelectric and Dielectric Properties of Multilayered BaTiO3/(Ba,Ca)TiO3/CaTiO3 Thin Films XN Zhu, TT Gao, X Xu, WZ Liang, Y Lin, C Chen, XM Chen ACS applied materials & interfaces 8 (34), 22309-22315, 2016 | 30 | 2016 |
| Effect of Ca substitution sites on dielectric properties and relaxor behavior of Ca doped barium strontium titanate ceramics C Chen, H Zhuang, X Zhu, D Zhang, K Zhou, H Yan Journal of Materials Science: Materials in Electronics 26, 2486-2492, 2015 | 28 | 2015 |
| Enhanced ferroelectricity, piezoelectricity and ferromagnetism in (Ba0. 75Ca0. 25) TiO3 modified BiFeO3 multiferroic ceramics XN Zhu, MS Rahman, YJ Wu, XQ Liu, YH Huang, G Liu, R Guo, XM Chen, ... Journal of Alloys and Compounds 658, 973-980, 2016 | 20 | 2016 |
| Dielectric and ferroelectric characteristics of Ba4Pr2Fe2Nb8O30 tungsten bronze ceramics TT Gao, W Chen, XN Zhu, XL Zhu, XM Chen Materials Chemistry and Physics 181, 47-53, 2016 | 19 | 2016 |
| Enhancement of relaxor properties by Nb doping in Ba0. 8Sr0. 12Ca0. 08TiO3 lead-free ferroelectric ceramics C Chen, H Zhuang, X Zhu, K Zhou, D Zhang Ceramics International 41 (8), 9893-9898, 2015 | 17 | 2015 |
| Conductive, dielectric and magnetic properties of Y-substituted LaFeO3 ceramics TT Gao, XN Zhu, J Chen, XQ Liu, XM Chen Journal of Alloys and Compounds 792, 665-672, 2019 | 16 | 2019 |
| Analytical model of CFET parasitic capacitance for advanced technology nodes B Sun, Z Xu, R Ding, J Yang, K Chen, S Xu, M Xu, Y Lu, X Zhu, S Yu, ... IEEE Transactions on Electron Devices 69 (3), 936-941, 2022 | 15 | 2022 |
| Atomic scale investigation of enhanced ferroelectricity in (Ba, Ca) TiO 3 XN Zhu, X Chen, H Tian, XM Chen RSC advances 7 (36), 22587-22591, 2017 | 15 | 2017 |
| Symmetry of ferroelectric switching and domain walls in hafnium dioxide GD Zhao, X Liu, W Ren, X Zhu, S Yu Physical Review B 106 (6), 064104, 2022 | 8 | 2022 |
| A study of the advantages to the photolithography process brought by the high NA EUV exposure tool in advanced logic design rules Y Li, X Zhu, S Yu, Q Wu 2021 International Workshop on Advanced Patterning Solutions (IWAPS), 1-4, 2021 | 7 | 2021 |
| Enhanced memory properties of HfO2-based ferroelectric capacitor by inserting Al2O3/ZrO2 stack interfacial layer YC Li, XX Li, T Huang, ZY Gu, QJ Yu, YC Liu, DW Zhang, XN Zhu, HL Lu Applied Physics Letters 122 (17), 2023 | 6 | 2023 |
| Demonstration of Robust Breakdown Reliability and Enhanced Endurance in Gallium Doped HfO2 Ferroelectric Thin Films T Huang, YC Li, CF Chen, XX Li, ZY Gu, DW Zhang, XN Zhu, HL Lu IEEE Electron Device Letters, 2023 | 5 | 2023 |
| The discussion of the typical BEOL design rules from 3 nm to 2 nm logic process with EUV and high NA EUV lithography Q Wu, Y Li, X Zhu, S Yu 2021 International Workshop on Advanced Patterning Solutions (IWAPS), 1-4, 2021 | 5 | 2021 |
| The device and circuit level benchmark of si-based cold source fets for future logic technology G Qi, W Gan, L Xu, J Liu, Q Yang, X Zhu, J Zhou, X Ma, G Hu, T Chen, ... IEEE Transactions on Electron Devices 69 (6), 3483-3489, 2022 | 4 | 2022 |
| A cdu budget and process window study with euv lithography for 3 nm cfet logic processes and an outlook for future generations Q Wu, Y Li, X Liu, X Zhu, S Yu 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit …, 2022 | 3 | 2022 |
| HD SRAM bitcell size shrink beyond 7nm node by CFET without EUV R Ding, Y Li, Y Liu, Q Wu, X Zhu, S Yu 2021 International Workshop on Advanced Patterning Solutions (IWAPS), 1-4, 2021 | 3 | 2021 |
| Ferroelectric domain structure evolution in Ba (Zr 0.1 Ti 0.9) O 3/(Ba 0.75 Ca 0.25) TiO 3 heterostructures XN Zhu, X Xu, Z Harrell, R Guo, AS Bhalla, M Zhang, J Jiang, C Chen, ... RSC Advances 5 (81), 65811-65817, 2015 | 3 | 2015 |
| Oxygen vacancies stabilized 180° charged domain walls in ferroelectric hafnium oxide Z Xu, X Zhu, GD Zhao, DW Zhang, S Yu Applied Physics Letters 124 (1), 2024 | 2 | 2024 |
