| CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories Z Yu, B Saini, PJ Liao, YK Chang, DH Hou, CH Nien, YC Shih, SH Yeong, ... Advanced Electronic Materials 8 (7), 2101258, 2022 | 11 | 2022 |
| Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors B Saini, F Huang, YY Choi, Z Yu, V Thampy, JD Baniecki, W Tsai, ... Advanced Electronic Materials 9 (6), 2300016, 2023 | 10 | 2023 |
| Kinetics and mechanism of light-induced phase separation in a mixed-halide perovskite S Peng, Y Wang, M Braun, Y Yin, AC Meng, W Tan, B Saini, K Severson, ... Matter 6 (6), 2052-2065, 2023 | 8 | 2023 |
| Nanocrystallite seeding of metastable ferroelectric phase formation in atomic layer-deposited Hafnia–Zirconia alloys Z Yu, B Saini, Y Liu, F Huang, A Mehta, JD Baniecki, HSP Wong, W Tsai, ... ACS Applied Materials & Interfaces 14 (47), 53057-53064, 2022 | 8 | 2022 |
| First Observation of Ultra-high Polarization (~ 108 μC/cm²) in Nanometer Scaled High Performance Ferroelectric HZO Capacitors with Mo Electrodes F Huang, B Saini, L Wan, H Lu, X He, S Qin, W Tsai, A Gruverman, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 7 | 2023 |
| Water additives improve the efficiency of violet perovskite light-emitting diodes M Hu, S Fernández, Q Zhou, P Narayanan, B Saini, TH Schloemer, J Lyu, ... Matter 6 (7), 2356-2367, 2023 | 6 | 2023 |
| Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering F Huang, B Saini, Z Yu, C Yoo, V Thampy, X He, JD Baniecki, W Tsai, ... ACS Applied Materials & Interfaces 15 (43), 50246-50253, 2023 | 3 | 2023 |
| Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films B Saini, F Huang, YY Choi, Z Yu, JD Baniecki, V Thampy, W Tsai, ... Solid-State Electronics 208, 108714, 2023 | 2 | 2023 |
| Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects F Huang, B Saini, L Wan, H Lu, X He, S Qin, W Tsai, A Gruverman, ... ACS nano 18 (27), 17600-17610, 2024 | 1 | 2024 |
| Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors C Yoo, J Hartanto, B Saini, W Tsai, V Thampy, SS Niavol, AC Meng, ... Nano Letters 24 (19), 5737-5745, 2024 | 1 | 2024 |
| Cerium-doped ferroelectric materials and related devices and methods PC McIntyre, W Tsai, JD Baniecki, Z Yu, B Saini US Patent App. 17/533,336, 2023 | | 2023 |
| CeO</sub> 2<//sub> Doping of Hf</sub> 0.5<//sub> Zr</sub> 0.5<//sub> O</sub> 2<//sub> Thin Films for High Endurance Ferroelectric Memories Z Yu, B Saini, PJ Liao, YK Chang, DH Hou, CH Nien, YC Shih, SH Yeong, ... Advanced Electronic Materials 8 (7), 2022 | | 2022 |
| CeO2-Doped Hf0.5Zr0.5O2 Ferroelectrics for High Endurance Embedded Memory Applications Z Yu, B Saini, PJ Liao, YK Chang, V Hou, CH Nien, YC Shih, SH Yeong, ... 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | | 2022 |
| Imaging light-induced phase separation dynamics of inorganic halide perovskites S Peng, A Meng, W Tan, M Braun, B Saini, K Severson, A Marshall, ... CLEO: Science and Innovations, SF3F. 6, 2020 | | 2020 |
