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| A 0.13 μm CMOS system-on-chip for a 512× 424 time-of-flight image sensor with multi-frequency photo-demodulation up to 130 MHz and 2 GS/s ADC CS Bamji, P O'Connor, T Elkhatib, S Mehta, B Thompson, LA Prather, ... IEEE Journal of Solid-State Circuits 50 (1), 303-319, 2014 | 245 | 2014 |
| IMpixel 65nm BSI 320MHz demodulated TOF Image sensor with 3μm global shutter pixels and analog binning CS Bamji, S Mehta, B Thompson, T Elkhatib, S Wurster, O Akkaya, ... 2018 IEEE International Solid-State Circuits Conference-(ISSCC), 94-96, 2018 | 161 | 2018 |
| Design of an 8-wide superscalar RISC microprocessor with simultaneous multithreading RP Preston, RW Badeau, DW Bailey, SL Bell, LL Biro, WJ Bowhill, ... 2002 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2002 | 131 | 2002 |
| High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ... 2013 IEEE International Electron Devices Meeting, 9.2. 1-9.2. 4, 2013 | 121 | 2013 |
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| A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI KI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 110 | 2014 |
| 7.6 a 512× 424 cmos 3d time-of-flight image sensor with multi-frequency photo-demodulation up to 130mhz and 2gs/s adc A Payne, A Daniel, A Mehta, B Thompson, CS Bamji, D Snow, H Oshima, ... 2014 IEEE International Solid-State Circuits Conference Digest of Technical …, 2014 | 99 | 2014 |
| Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond Q Liu, A Yagishita, N Loubet, A Khakifirooz, P Kulkarni, T Yamamoto, ... 2010 Symposium on VLSI Technology, 61-62, 2010 | 94 | 2010 |
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| UTBB FDSOI transistors with dual STI for a multi-Vt strategy at 20nm node and below L Grenouillet, M Vinet, J Gimbert, B Giraud, JP Noel, Q Liu, P Khare, ... 2012 International Electron Devices Meeting, 3.6. 1-3.6. 4, 2012 | 61 | 2012 |
| Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS A Khakifirooz, K Cheng, T Nagumo, N Loubet, T Adam, A Reznicek, ... 2012 Symposium on VLSI technology (VLSIT), 117-118, 2012 | 50 | 2012 |
| Quantum-efficiency-enhanced time-of-flight detector OC Akkaya, S Nagaraja, T Elkhatib, C Bamji, S Mehta US Patent 10,134,926, 2018 | 48 | 2018 |
| A review of indirect time-of-flight technologies C Bamji, J Godbaz, M Oh, S Mehta, A Payne, S Ortiz, S Nagaraja, T Perry, ... IEEE Transactions on Electron Devices 69 (6), 2779-2793, 2022 | 46 | 2022 |
| ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm2 SRAM cell K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, B Haran, A Kumar, T Adam, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 128-129, 2011 | 46 | 2011 |
| A simplified normal optical flow measurement CMOS camera S Mehta, R Etienne-Cummings IEEE Transactions on Circuits and Systems I: Regular Papers 53 (6), 1223-1234, 2006 | 37 | 2006 |
| System architecture design for time-of-flight system having reduced differential pixel size, and time-of-flight systems so designed C Bamji, S Mehta US Patent 8,203,699, 2012 | 33 | 2012 |
| Normal optical flow measurement on a CMOS APS imager S Mehta, R Etienne-Cummings 2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No …, 2004 | 32 | 2004 |
| CMOS three-dimensional image sensor detectors with assured non collection of late arriving charge, more rapid collection of other charge, and with improved modulation contrast C Bamji, S Mehta, TAT Elkhatib US Patent 8,314,924, 2012 | 31 | 2012 |
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