| Observation of high spin-to-charge conversion by sputtered bismuth selenide thin films at room temperature M Dc, JY Chen, T Peterson, P Sahu, B Ma, N Mousavi, R Harjani, ... Nano letters 19 (8), 4836-4844, 2019 | 52 | 2019 |
| Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet M Dc, T Liu, JY Chen, T Peterson, P Sahu, H Li, Z Zhao, M Wu, JP Wang Applied Physics Letters 114 (10), 2019 | 41 | 2019 |
| Bipolar electric-field switching of perpendicular magnetic tunnel junctions through voltage-controlled exchange coupling D Zhang, M Bapna, W Jiang, D Sousa, YC Liao, Z Zhao, Y Lv, P Sahu, ... Nano letters 22 (2), 622-629, 2022 | 40 | 2022 |
| Spin pumping and large field-like torque at room temperature in sputtered amorphous WTe2− x films Y Fan, H Li, M Dc, T Peterson, J Held, P Sahu, J Chen, D Zhang, ... APL Materials 8 (4), 2020 | 32 | 2020 |
| Large unidirectional spin Hall and Rashba− Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures Y Lv, J Kally, T Liu, P Quarterman, T Pillsbury, BJ Kirby, AJ Grutter, ... Applied Physics Reviews 9 (1), 2022 | 30 | 2022 |
| Weak antilocalization and low-temperature characterization of sputtered polycrystalline bismuth selenide P Sahu, JY Chen, JC Myers, JP Wang Applied Physics Letters 112 (12), 2018 | 30 | 2018 |
| Electric field switchable magnetic devices JP Wang, D Zhang, P Sahu US Patent 11,183,227, 2021 | 12 | 2021 |
| Annealing Temperature Effects on Spin Hall Magnetoresistance in Perpendicularly Magnetized W/CoFeB Bilayers TJ Peterson, P Sahu, D Zhang, DC Mahendra, JP Wang IEEE Transactions on Magnetics 55 (2), 1-4, 2018 | 8* | 2018 |
| Topological material for trapping charge and switching a ferromagnet JP Wang, P Sahu US Patent 11,328,757, 2022 | 5 | 2022 |
| Room Temperature Spin-to-Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1–x/CoFeB Bilayers P Sahu, Y Yang, Y Fan, H Jaffrès, JY Chen, X Devaux, Y Fagot-Revurat, ... ACS Applied Materials & Interfaces 15 (32), 38592-38602, 2023 | 4 | 2023 |
| Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs P Sahu, JY Chen, JP Wang AIP Advances 10 (1), 2020 | 4 | 2020 |
| Effects of mobile oxygen ions in top-gated synthetic antiferromagnet structure P Sahu, D Zhang, T Peterson, JP Wang Applied Physics Letters 117 (20), 2020 | 3 | 2020 |
| Room temperature high charge to spin conversion in amorphous topological insulator P Sahu, J Chen, X Devaux, H Jaffrès, S Migot, H Dang, JM George, Y Lu, ... Scanning Electron Microsc Meet at, 2019 | 3 | 2019 |
| Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor δ-TaN PW Swatek, X Hang, Y Fan, W Jiang, H Yun, D Lyu, D Zhang, TJ Peterson, ... Physical Review Materials 6 (7), 074206, 2022 | 2 | 2022 |
| Methods of forming apparatus comprising crystalline semiconductor materials and metal silicide materials, and related apparatus P Sahu, MA Treger, YF Lee, JS Brown, JIA Shuai, J Mohan, S Borsari, ... US Patent App. 18/427,756, 2024 | 1 | 2024 |
| Apparatus comprising crystalline semiconductor materials and metal silicide materials, and related methods and systems JS Brown, P Sahu, JIA Shuai, JB Hull, S Borsari, LW Fang, VY Yadav, ... US Patent App. 18/427,740, 2024 | 1 | 2024 |
| Memory Circuitry And Methods Used In Forming Memory Circuitry T Tomoyama, P Sahu, H Oshima, JB Hull, S Sugiyama, S Sugiura US Patent App. 18/440,404, 2024 | 1 | 2024 |
| Room Temperature Mott Hopping and Spin pumping Characterization of Amorphous Gd-alloyed Bi2Se3 P Sahu, Y Fan, T Peterson, J Chen, X Devaux, H Jaffrès, S Migot, H Dang, ... arXiv preprint arXiv.1911.03323 10, 0 | 1 | |
| Chemical Vapor Deposited Si: P Epitaxial Growth for DRAM Bit Contact P Sahu, J Brown, S Borsari, J Hull | | 2025 |
| Process Characterization of Epitaxial SiP [100] and [110] Films P Sahu, M Sunder, J Wensel, S Borsari | | 2025 |
Jian-Ping WangDistinguished McKnight University Professor and Robert Hartmann Chair, University of Minnesota在 umn.edu 的电子邮件经过验证
