Epitaxial growth of germanium dots on Si (001) surface covered by a very thin silicon oxide layer A Barski, M Derivaz, JL Rouviere, D Buttard Applied Physics Letters 77 (22), 3541-3543, 2000 | 100 | 2000 |
X‐ray‐diffraction investigation of the anodic oxidation of porous silicon D Buttard, D Bellet, G Dolino Journal of applied physics 79 (10), 8060-8070, 1996 | 73 | 1996 |
High-energy x-ray reflectivity of buried interfaces created by wafer bonding F Rieutord, J Eymery, F Fournel, D Buttard, R Oeser, O Plantevin, ... Physical Review B 63 (12), 125408, 2001 | 72 | 2001 |
Ultra-dense and highly doped SiNWs for micro-supercapacitors electrodes F Thissandier, L Dupré, P Gentile, T Brousse, G Bidan, D Buttard, S Sadki Electrochimica Acta 117, 159-163, 2014 | 65 | 2014 |
The growth of small diameter silicon nanowires to nanotrees P Gentile, T David, F Dhalluin, D Buttard, N Pauc, M Den Hertog, P Ferret, ... Nanotechnology 19 (12), 125608, 2008 | 59 | 2008 |
Thin layers and multilayers of porous silicon: X-ray diffraction investigation D Buttard, D Bellet, G Dolino, T Baumbach Journal of Applied Physics 83 (11), 5814-5822, 1998 | 59 | 1998 |
Porous silicon strain during in situ ultrahigh vacuum thermal annealing D Buttard, G Dolino, C Faivre, A Halimaoui, F Comin, V Formoso, L Ortega Journal of applied physics 85 (10), 7105-7111, 1999 | 54 | 1999 |
Structural investigation of silicon nanowires using GIXD and GISAXS: Evidence of complex saw-tooth faceting T David, D Buttard, T Schülli, F Dallhuin, P Gentile Surface Science 602 (15), 2675-2680, 2008 | 46 | 2008 |
X-ray reflectivity investigation of thin p-type porous silicon layers D Buttard, G Dolino, D Bellet, T Baumbach, F Rieutord Solid state communications 109 (1), 1-5, 1998 | 39 | 1998 |
X-ray diffraction investigation of porous silicon superlattices D Buttard, D Bellet, T Baumbach Thin Solid Films 276 (1-2), 69-72, 1996 | 38 | 1996 |
Dislocation strain field in ultrathin bonded silicon wafers studied by grazing incidence x-ray diffraction J Eymery, D Buttard, F Fournel, H Moriceau, GT Baumbach, D Lübbert Physical Review B 65 (16), 165337, 2002 | 31 | 2002 |
Gold contamination in VLS-grown Si nanowires: multiwavelength anomalous diffraction investigations L Dupre, D Buttard, C Leclere, H Renevier, P Gentile Chemistry of Materials 24 (23), 4511-4516, 2012 | 28 | 2012 |
Sub-10 nm Silicon Nanopillar Fabrication Using Fast and Brushless Thermal Assembly of PS-b-PDMS Diblock Copolymer J Garnier, J Arias-Zapata, O Marconot, S Arnaud, S Böhme, C Girardot, ... ACS applied materials & interfaces 8 (15), 9954-9960, 2016 | 26 | 2016 |
Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on< 100> silicon wafers T Gorisse, L Dupré, P Gentile, M Martin, M Zelsmann, D Buttard Nanoscale Research Letters 8, 1-9, 2013 | 26 | 2013 |
Gold colloidal nanoparticle electrodeposition on a silicon surface in a uniform electric field D Buttard, F Oelher, T David Nanoscale research letters 6 (1), 580, 2011 | 23 | 2011 |
X-ray diffraction and reflectivity studies of thin porous silicon layers D Buttard, G Dolino, D Bellet, T Baumbach MRS Online Proceedings Library (OPL) 452, 437, 1996 | 23 | 1996 |
A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition MB Derbali, J Meddeb, H Mâaref, D Buttard, P Abraham, Y Monteil Journal of applied physics 84 (1), 503-508, 1998 | 18 | 1998 |
X-ray reflectivity of ultrathin twist-bonded silicon wafers J Eymery, F Fournel, F Rieutord, D Buttard, H Moriceau, B Aspar Applied physics letters 75 (22), 3509-3511, 1999 | 17 | 1999 |
Tailoring strain and morphology of core–shell SiGe nanowires by low-temperature ge condensation T David, K Liu, A Ronda, L Favre, M Abbarchi, M Gailhanou, P Gentile, ... Nano letters 17 (12), 7299-7305, 2017 | 16 | 2017 |
High‐density guided growth of silicon nanowires in nanoporous alumina on Si (100) substrate: estimation of activation energy D Buttard, T David, P Gentile, F Dhalluin, T Baron physica status solidi (RRL)–Rapid Research Letters 3 (1), 19-21, 2009 | 16 | 2009 |