| Structure, properties and applications of two‐dimensional hexagonal boron nitride S Roy, X Zhang, AB Puthirath, A Meiyazhagan, S Bhattacharyya, ... Advanced Materials 33 (44), 2101589, 2021 | 336 | 2021 |
| Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ... Acs Nano 10 (3), 3580-3588, 2016 | 249 | 2016 |
| PZT‐based piezoelectric MEMS technology GL Smith, JS Pulskamp, LM Sanchez, DM Potrepka, RM Proie, TG Ivanov, ... Journal of the American Ceramic Society 95 (6), 1777-1792, 2012 | 245 | 2012 |
| Piezoelectric PZT MEMS technologies for small-scale robotics and RF applications JS Pulskamp, RG Polcawich, RQ Rudy, SS Bedair, RM Proie, T Ivanov, ... MRS bulletin 37 (11), 1062-1070, 2012 | 126 | 2012 |
| Integrated power devices and signal isolation structure J Costa, T Ivanov, M Carroll US Patent 7,135,766, 2006 | 97 | 2006 |
| Integrated MEMS switch technology on SOI-CMOS J Costa, T Ivanov, J Hammond, J Gering, E Glass, J Jorgenson, D Dening, ... Proceedings of Hilton Head Workshop: A Solid-State Sensors, Actuators and …, 2008 | 93 | 2008 |
| Silicon RFCMOS SOI technology with above-IC MEMS integration for front end wireless applications J Costa, T Ivanov, M Carroll, J Hammond, E Glass, J Jorgenson, ... 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 204-207, 2008 | 81 | 2008 |
| Thermally stable, high performance transfer doping of diamond using transition metal oxides KG Crawford, D Qi, J McGlynn, TG Ivanov, PB Shah, J Weil, A Tallaire, ... Scientific Reports 8 (1), 3342, 2018 | 58 | 2018 |
| Development of a PZT MEMS switch architecture for low-power digital applications RM Proie, RG Polcawich, JS Pulskamp, T Ivanov, ME Zaghloul Journal of Microelectromechanical Systems 20 (4), 1032-1042, 2011 | 58 | 2011 |
| A silicon RFCMOS SOI technology for integrated cellular/WLAN RF TX modules J Costa, M Carroll, J Jorgenson, T McKay, T Ivanov, T Dinh, D Kozuch, ... 2007 IEEE/MTT-S International Microwave Symposium, 445-448, 2007 | 55 | 2007 |
| Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides K Zhang, B Jariwala, J Li, NC Briggs, B Wang, D Ruzmetov, RA Burke, ... Nanoscale 10 (1), 336-341, 2018 | 49 | 2018 |
| Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process CA King, MR Frei, M Mastrapasqua, KK Ng, YO Kim, RW Johnson, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 48 | 1999 |
| Inline ground-signal-ground (GSG) RF tester TG Ivanov, MS Carroll US Patent 6,194,739, 2001 | 44 | 2001 |
| Demonstration of diamond nuclear spin gyroscope A Jarmola, S Lourette, VM Acosta, AG Birdwell, P Blümler, D Budker, ... Science advances 7 (43), eabl3840, 2021 | 39 | 2021 |
| Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN TP O'Regan, D Ruzmetov, MR Neupane, RA Burke, AA Herzing, K Zhang, ... Applied Physics Letters 111 (5), 2017 | 37 | 2017 |
| Integration of high-Q inductors in a latch-up resistant CMOS technology MR Frei, NR Belk, DC Dennis, MS Carroll, W Lin, MR Pinto, VD Archer, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 35 | 1999 |
| Resistor fuse MS Carroll, FY Hui, TG Ivanov US Patent 6,356,496, 2002 | 32 | 2002 |
| p-Diamond as candidate for plasmonic terahertz and far infrared applications M Shur, S Rudin, G Rupper, T Ivanov Applied Physics Letters 113 (25), 2018 | 31 | 2018 |
| Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length KG Crawford, JD Weil, PB Shah, DA Ruzmetov, MR Neupane, K Kingkeo, ... IEEE Transactions on Electron Devices 67 (6), 2270-2275, 2020 | 30 | 2020 |
| Systematic comparison of various oxidation treatments on diamond surface C Li, X Zhang, EF Oliveira, AB Puthirath, MR Neupane, JD Weil, ... Carbon 182, 725-734, 2021 | 28 | 2021 |
Pankaj B ShahUS Army Research Lab在 mail.mil 的电子邮件经过验证
