| Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT J Sun, H Xu, X Wu, K Sheng 2016 13th China International Forum on Solid State Lighting: International …, 2016 | 73 | 2016 |
| Short circuit capability and high temperature channel mobility of SiC MOSFETs J Sun, H Xu, X Wu, S Yang, Q Guo, K Sheng 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 59 | 2017 |
| Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT N Ren, H Hu, X Lyu, J Wu, H Xu, R Li, Z Zuo, K Wang, K Sheng Solid-State Electronics 152, 33-40, 2019 | 47 | 2019 |
| Accurate Analytical Switching-On Loss Model of SiC MOSFET Considering Dynamic Transfer Characteristic and Qgd Z Dong, X Wu, H Xu, N Ren, K Sheng IEEE Transactions on Power Electronics 35 (11), 12264-12273, 2020 | 42 | 2020 |
| A recent review on silicon carbide power devices technologies K Sheng, N Ren, H Xu Proceedings of the CSEE 40 (6), 1741-1753, 2020 | 39 | 2020 |
| Failure mechanism analysis of SiC MOSFETs in unclamped inductive switching conditions N Ren, KL Wang, J Wu, H Xu, K Sheng 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 35 | 2019 |
| Investigation of 1200 V SiC MOSFETs’ surge reliability H Li, J Wang, N Ren, H Xu, K Sheng Micromachines 10 (7), 485, 2019 | 33 | 2019 |
| Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various VGS Biases Z Zhu, H Xu, L Liu, N Ren, K Sheng IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (5 …, 2020 | 28 | 2020 |
| High-temperature characterization of a 1.2-kV SiC MOSFET using dynamic short-circuit measurement technique J Sun, S Yang, H Xu, L Zhang, X Wu, K Sheng, KJ Chen IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 215-222, 2019 | 24 | 2019 |
| Trench Termination With SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices H Wang, J Wang, L Liu, Y Li, B Wang, H Xu, S Yang, K Sheng IEEE Electron Device Letters 39 (12), 1900-1903, 2018 | 19 | 2018 |
| Degradation of 4H-SiC MOSFET body diode under repetitive surge current stress Z Zhu, N Ren, H Xu, L Liu, Q Guo, J Zhang, K Sheng, Z Wang 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 14 | 2020 |
| Electrical characterization of 1.2 kV SiC MOSFET at extremely high junction temperature J Sun, H Xu, S Yang, K Sheng 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 14 | 2018 |
| Investigation of avalanche capability of 1200V 4H-SiC MPS diodes and JBS diodes L Liu, N Ren, J Wu, Z Zhu, H Xu, Q Guo, K Sheng 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 12 | 2020 |
| Surge capability of 1.2 kV SiC diodes with high-temperature implantation H Xu, J Sun, J Cui, J Wu, H Wang, S Yang, N Ren, K Sheng 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 11 | 2018 |
| Characterization and analysis on performance and avalanche reliability of SiC MOSFETs with varied JFET region width Z Zhu, N Ren, H Xu, L Liu, K Sheng IEEE Transactions on Electron Devices 68 (8), 3982-3990, 2021 | 10 | 2021 |
| Avalanche reliability of planar-gate SiC MOSFET with varied JFET region width and its balance with characteristic performance Z Zhu, N Ren, H Xu, L Liu, K Sheng 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 8 | 2021 |
| The impact of process conditions on surge current capability of 1.2 kV SiC JBS and MPS diodes H Xu, N Ren, J Wu, Z Zhu, Q Guo, K Sheng Materials 14 (3), 663, 2021 | 8 | 2021 |
| Electrical characterization and analysis of 4H-SiC lateral MOSFET (LMOS) for high-voltage power integrated circuits L Liu, J Wang, Z Wang, M Bai, J Li, Z Zhu, H Xu, N Ren, Q Guo, K Sheng 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 6 | 2023 |
| Performance and Short-Circuit Reliability of SiC MOSFETs With Enhanced JFET Doping Design C Lin, N Ren, H Xu, K Sheng IEEE Transactions on Electron Devices 70 (5), 2395-2402, 2023 | 6 | 2023 |
| The impact of the hexagonal and circular cell designs on the characteristics and ruggedness for 4H-SiC MPS diodes L Liu, J Wu, H Xu, Z Zhu, N Ren, Q Guo, J Zhang, K Sheng IEEE Transactions on Electron Devices 69 (3), 1226-1232, 2022 | 6 | 2022 |
