| Physically based modeling of low field electron mobility in ultrathin single-and double-gate SOI n-MOSFETs D Esseni, A Abramo, L Selmi, E Sangiorgi IEEE transactions on electron devices 50 (12), 2445-2455, 2003 | 203 | 2003 |
| Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs D Esseni, A Abramo IEEE Transactions on Electron Devices 50 (7), 1665-1674, 2003 | 155 | 2003 |
| Quantum transport of electrons in open nanostructures with the Wigner-function formalism P Bordone, M Pascoli, R Brunetti, A Bertoni, C Jacoboni, A Abramo Physical Review B 59 (4), 3060, 1999 | 138 | 1999 |
| A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon A Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ... IEEE Transactions on Electron Devices 41 (9), 1646-1654, 1994 | 90 | 1994 |
| Closed-and open-boundary models for gate-current calculation in n-MOSFETs A Dalla Serra, A Abramo, P Palestri, L Selmi, F Widdershoven IEEE Transactions on Electron Devices 48 (8), 1811-1815, 2001 | 70 | 2001 |
| Density of states of a two-dimensional electron gas at semiconductor surfaces MG Betti, V Corradini, G Bertoni, P Casarini, C Mariani, A Abramo Physical Review B 63 (15), 155315, 2001 | 67 | 2001 |
| Physical origin of the excess thermal noise in short channel MOSFETs JS Goo, CH Choi, A Abramo, JG Ahn, Z Yu, TH Lee, RW Dutton IEEE Electron Device Letters 22 (2), 101-103, 2001 | 57 | 2001 |
| Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs A Abramo, A Cardin, L Selmi, E Sangiorgi IEEE Transactions on electron devices 47 (10), 1858-1863, 2000 | 56 | 2000 |
| Hot carrier effects in short MOSFETs at low applied voltages A Abramo, C Fiegna, F Venturi Proceedings of International Electron Devices Meeting, 301-304, 1995 | 55 | 1995 |
| A fully pipelined architecture for the LOCO-I compression algorithm P Merlino, A Abramo IEEE Transactions on very large scale integration (VLSI) Systems 17 (7), 967-971, 2009 | 51 | 2009 |
| A numerical method to compute isotropic band models from anisotropic semiconductor band structures A Abramo, F Venturi, E Sangiorgi, JM Higman, B Ricco IEEE transactions on computer-aided design of integrated circuits and …, 1993 | 34 | 1993 |
| Electron energy distributions in silicon structures at low applied voltages and high electric fields A Abramo, C Fiegna Journal of applied physics 80 (2), 889-893, 1996 | 32 | 1996 |
| Study of low field electron transport in ultra-thin single and double-gate SOI MOSFETs D Esseni, A Abramo, L Selmi, E Sangiorgi Digest. International Electron Devices Meeting,, 719-722, 2002 | 31 | 2002 |
| Analysis of quantum effects in nonuniformly doped MOS structures C Fiegna, A Abramo IEEE Transactions on Electron Devices 45 (4), 877-880, 1998 | 29 | 1998 |
| An FPGA-based versatile development system for endoscopic capsule design optimization C Cavallotti, P Merlino, M Vatteroni, P Valdastri, A Abramo, A Menciassi, ... Sensors and Actuators A: Physical 172 (1), 301-307, 2011 | 28 | 2011 |
| Analytical and numerical study of the impact of HALOs on short channel and hot carrier effects in scaled MOSFETs S Zanchetta, A Todon, A Abramo, L Selmi, E Sangiorgi Solid-State Electronics 46 (3), 429-434, 2002 | 24 | 2002 |
| Solution of 1-D Schrodinger and Poisson equations double gate SOI MOS C Fiegna, A Abramo SISPAD'97. 1997 International Conference on Simulation of Semiconductor …, 1997 | 24 | 1997 |
| IEEE Trans. Electron Devices D Esseni, A Abramo IEEE Trans. Electron Devices 50 (3), 802-808, 2003 | 23 | 2003 |
| A mixed convex/nonconvex distributed localization approach for the deployment of indoor positioning services A Abramo, F Blanchini, L Geretti, C Savorgnan IEEE Transactions on Mobile Computing 7 (11), 1325-1337, 2008 | 22 | 2008 |
| A multiband Monte Carlo approach to Coulomb interaction for device analysis A Abramo, R Brunetti, C Jacoboni, F Venturi, E Sangiorgi Journal of applied physics 76 (10), 5786-5794, 1994 | 22 | 1994 |
