| Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV R Xu, H Jang, MH Lee, D Amanov, Y Cho, H Kim, S Park, H Shin, D Ham Nano letters 19 (4), 2411-2417, 2019 | 356 | 2019 |
| Ultralow-dielectric-constant amorphous boron nitride S Hong, CS Lee, MH Lee, Y Lee, KY Ma, G Kim, SI Yoon, K Ihm, KJ Kim, ... Nature 582 (7813), 511-514, 2020 | 245 | 2020 |
| An atomically thin optoelectronic machine vision processor H Jang, C Liu, H Hinton, MH Lee, H Kim, M Seol, HJ Shin, S Park, D Ham Advanced Materials 32 (36), 2002431, 2020 | 151 | 2020 |
| A low-noise solid-state nanopore platform based on a highly insulating substrate MH Lee, A Kumar, KB Park, SY Cho, HM Kim, MC Lim, YR Kim, KB Kim Scientific reports 4 (1), 7448, 2014 | 137 | 2014 |
| Sub-10-nm nanochannels by self-sealing and self-limiting atomic layer deposition SW Nam, MH Lee, SH Lee, DJ Lee, SM Rossnagel, KB Kim Nano letters 10 (9), 3324-3329, 2010 | 92 | 2010 |
| High‐throughput growth of wafer‐scale monolayer transition metal dichalcogenide via vertical ostwald ripening M Seol, MH Lee, H Kim, KW Shin, Y Cho, I Jeon, M Jeong, HI Lee, J Park, ... Advanced Materials 32 (42), 2003542, 2020 | 90 | 2020 |
| Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors SJ Jeong, Y Gu, J Heo, J Yang, CS Lee, MH Lee, Y Lee, H Kim, S Park, ... Scientific Reports 6 (1), 20907, 2016 | 69 | 2016 |
| Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices TY Lee, KHP Kim, DS Suh, C Kim, YS Kang, DG Cahill, D Lee, MH Lee, ... Applied Physics Letters 94 (24), 2009 | 64 | 2009 |
| In-sensor optoelectronic computing using electrostatically doped silicon H Jang, H Hinton, WB Jung, MH Lee, C Kim, M Park, SK Lee, S Park, ... Nature Electronics 5 (8), 519-525, 2022 | 58 | 2022 |
| Separate domain formation in Ge2Sb2Te5–SiOx mixed layer TY Lee, SS Yim, D Lee, MH Lee, DH Ahn, KB Kim Applied physics letters 89 (16), 2006 | 50 | 2006 |
| Two-dimensional materials inserted at the metal/semiconductor interface: Attractive candidates for semiconductor device contacts MH Lee, Y Cho, KE Byun, KW Shin, SG Nam, C Kim, H Kim, SA Han, ... Nano letters 18 (8), 4878-4884, 2018 | 43 | 2018 |
| Theoretical and experimental study of nanopore drilling by a focused electron beam in transmission electron microscopy HM Kim, MH Lee, KB Kim Nanotechnology 22 (27), 275303, 2011 | 41 | 2011 |
| Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer SW Nam, MJ Rooks, JKW Yang, KK Berggren, HM Kim, MH Lee, KB Kim, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 41 | 2009 |
| Potential role of motion for enhancing maximum output energy of triboelectric nanogenerator KE Byun, MH Lee, Y Cho, SG Nam, HJ Shin, S Park APL Materials 5 (7), 2017 | 35 | 2017 |
| Association of TXNDC5 gene polymorphisms and susceptibility to nonsegmental vitiligo in the Korean population KH Jeong, MK Shin, YK Uhm, HJ Kim, JH Chung, MH Lee British Journal of Dermatology 162 (4), 759-764, 2010 | 24 | 2010 |
| Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based … Y Lee, W Jeon, Y Cho, MH Lee, SJ Jeong, J Park, S Park ACS nano 10 (7), 6659-6666, 2016 | 23 | 2016 |
| Two cases of factitial panniculitis induced by electroacupuncture KH Jeong, MH Lee Clinical and Experimental Dermatology 34 (5), e170-e173, 2009 | 23 | 2009 |
| Transforming growth factor beta receptor II (TGFBR2) polymorphisms and the association with nonsegmental vitiligo in the Korean population JY Yun, YK Uhm, HJ Kim, SH Lim, JH Chung, M Shin, SV Yim, MH Lee International Journal of Immunogenetics 37 (4), 289-291, 2010 | 21 | 2010 |
| Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics SJ Jeong, HW Kim, J Heo, MH Lee, HJ Song, JY Ku, Y Lee, Y Cho, ... 2D Materials 3 (3), 035027, 2016 | 19 | 2016 |
| Reply to: On the measured dielectric constant of amorphous boron nitride S Hong, MH Lee, SW Kim, CS Lee, KY Ma, G Kim, SI Yoon, A Antidormi, ... Nature 590 (7844), E8-E10, 2021 | 16 | 2021 |
Hyun-Mi KimKorea Electronics Technolgy Institute在 keti.re.kr 的电子邮件经过验证
