| Temperature dependence of the optical properties of self-organized quantum dots A Polimeni, A Patane, M Henini, L Eaves, PC Main Physical Review B 59 (7), 5064, 1999 | 266 | 1999 |
| Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells A Polimeni, M Capizzi, M Geddo, M Fischer, M Reinhardt, A Forchel Applied Physics Letters 77 (18), 2870-2872, 2000 | 160 | 2000 |
| Physics and applications of dilute nitrides I Buyanova, W Chen CRC Press, 2004 | 158 | 2004 |
| Trends in the electronic structure of dilute nitride alloys EP O'Reilly, A Lindsay, PJ Klar, A Polimeni, M Capizzi Semiconductor Science and Technology 24 (3), 033001, 2009 | 146 | 2009 |
| Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in F Masia, G Pettinari, A Polimeni, M Felici, A Miriametro, M Capizzi, ... Physical Review B—Condensed Matter and Materials Physics 73 (7), 073201, 2006 | 138 | 2006 |
| Evidence of the direct-to-indirect band gap transition in strained two-dimensional , , and E Blundo, M Felici, T Yildirim, G Pettinari, D Tedeschi, A Miriametro, B Liu, ... Physical Review Research 2 (1), 012024, 2020 | 131 | 2020 |
| Electronic structure of self-assembled InAs quantum dots in GaAs matrix PN Brounkov, A Polimeni, ST Stoddart, M Henini, L Eaves, PC Main, ... Applied physics letters 73 (8), 1092-1094, 1998 | 124 | 1998 |
| Effect of hydrogen on the electronic properties of quantum wells A Polimeni, HM Bissiri, M Capizzi, M Fischer, M Reinhardt, A Forchel Physical Review B 63 (20), 201304, 2001 | 109 | 2001 |
| Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− xBix G Pettinari, A Polimeni, M Capizzi, JH Blokland, PCM Christianen, ... Applied Physics Letters 92 (26), 2008 | 106 | 2008 |
| Effect of nitrogen on the temperature dependence of the energy gap in single quantum wells A Polimeni, M Capizzi, M Geddo, M Fischer, M Reinhardt, A Forchel Physical Review B 63 (19), 195320, 2001 | 104 | 2001 |
| Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals E Blundo, E Cappelluti, M Felici, G Pettinari, A Polimeni Applied Physics Reviews 8 (2), 2021 | 93 | 2021 |
| Controlled micro/nanodome formation in proton‐irradiated bulk transition‐metal dichalcogenides D Tedeschi, E Blundo, M Felici, G Pettinari, B Liu, T Yildrim, E Petroni, ... Advanced Materials 31 (44), 1903795, 2019 | 92 | 2019 |
| Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells G Baldassarri H. v. H, M Bissiri, A Polimeni, M Capizzi, M Fischer, ... Applied Physics Letters 78 (22), 3472-3474, 2001 | 77 | 2001 |
| Early manifestation of localization effects in diluted Ga (AsN) F Masia, A Polimeni, G Baldassarri Höger von Högersthal, M Bissiri, ... Applied physics letters 82 (25), 4474-4476, 2003 | 75 | 2003 |
| Hydrogen-induced improvements in optical quality of GaNAs alloys IA Buyanova, M Izadifard, WM Chen, A Polimeni, M Capizzi, HP Xin, ... Applied physics letters 82 (21), 3662-3664, 2003 | 74 | 2003 |
| Piezoelectric effects in self-assembled quantum dots grown on GaAs substrates A Patane, A Levin, A Polimeni, F Schindler, PC Main, L Eaves, M Henini Applied Physics Letters 77 (19), 2979-2981, 2000 | 74 | 2000 |
| Linewidth analysis of the photoluminescence of As/GaAs quantum wells (x=0.09, 0.18, 1.0) A Patanè, A Polimeni, M Capizzi, F Martelli Physical Review B 52 (4), 2784, 1995 | 74 | 1995 |
| Self-aggregation of quantum dots for very thin InAs layers grown on GaAs A Polimeni, A Patane, M Capizzi, F Martelli, L Nasi, G Salviati Physical Review B 53 (8), R4213, 1996 | 71 | 1996 |
| Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures PN Brunkov, AR Kovsh, VM Ustinov, YG Musikhin, NN Ledentsov, ... Journal of electronic materials 28, 486-490, 1999 | 69 | 1999 |
| Effect of the order-disorder transition on the optical properties of Cu2ZnSnS4 M Valentini, C Malerba, F Menchini, D Tedeschi, A Polimeni, M Capizzi, ... Applied Physics Letters 108 (21), 2016 | 68 | 2016 |
Marco FeliciAssociate Professor at Sapienza University of Rome在 roma1.infn.it 的电子邮件经过验证
