| Ultra-doped n-type germanium thin films for sensing in the mid-infrared S Prucnal, F Liu, M Voelskow, L Vines, L Rebohle, D Lang, Y Berencén, ... Scientific reports 6 (1), 27643, 2016 | 85 | 2016 |
| Enhancement of carrier mobility in thin Ge layer by Sn co-doping S Prucnal, F Liu, Y Berencén, L Vines, L Bischoff, J Grenzer, S Andric, ... Semiconductor Science and Technology 31 (10), 105012, 2016 | 12 | 2016 |
| Increased breakdown voltage in vertical heterostructure III-V nanowire MOSFETs with a field plate OP Kilpi, S Andrić, J Svensson, MS Ram, E Lind, LE Wernersson IEEE Electron Device Letters 42 (11), 1596-1598, 2021 | 11 | 2021 |
| Millimeter-wave vertical III-V nanowire MOSFET device-to-circuit co-design S Andrić, LO Fhager, LE Wernersson IEEE Transactions on Nanotechnology 20, 434-440, 2021 | 11 | 2021 |
| Low-temperature back-end-of-line technology compatible with III-V nanowire MOSFETs S Andric, L Ohlsson Fhager, F Lindelöw, OP Kilpi, LE Wernersson Journal of Vacuum Science & Technology B 37 (6), 2019 | 9 | 2019 |
| Low-temperature front-side BEOL technology with circuit level multiline thru-reflect-line kit for III-V MOSFETs on silicon S Andric, L Ohlsson, LE Wenrersson 2019 92nd ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2019 | 7 | 2019 |
| Lateral III–V nanowire MOSFETs in low-noise amplifier stages S Andrić, F Lindelöw, LO Fhager, E Lind, LE Wernersson IEEE Transactions on Microwave Theory and Techniques 70 (2), 1284-1291, 2021 | 4 | 2021 |
| Performance, analysis, and modeling of III-V vertical nanowire MOSFETs on Si at higher voltages S Andrić, OP Kilpi, MS Ram, J Svensson, E Lind, LE Wernersson IEEE Transactions on Electron Devices 69 (6), 3055-3060, 2022 | 2 | 2022 |
| III-V Nanowire MOSFET High-Frequency Technology Platform S Andric | 2 | 2021 |
| Design of III-V vertical nanowire MOSFETs for near-unilateral millimeter-wave operation S Andrić, L Ohlsson-Fhager, LE Wernersson 2020 15th European Microwave Integrated Circuits Conference (EuMIC), 85-88, 2021 | 1 | 2021 |
| RF Characterization of Ferroelectric MOS Capacitors AEO Persson, S Andrić, L Fhager, LE Wernersson IEEE Electron Device Letters, 2024 | | 2024 |
| Semiconductor structure forming a plurality of transistors S Olson, T Tired, S Andric, A Jönsson, LE Wernersson, L Tilly US Patent App. 18/558,651, 2024 | | 2024 |
