| Silicene oxides: formation, structures and electronic properties R Wang, X Pi, Z Ni, Y Liu, S Lin, M Xu, D Yang Scientific Reports 3 (1), 3507, 2013 | 69 | 2013 |
| First-principles study on the surface chemistry of 1.4 nm silicon nanocrystals: case of hydrosilylation R Wang, X Pi, D Yang The Journal of Physical Chemistry C 116 (36), 19434-19443, 2012 | 57 | 2012 |
| A 22–30-GHz GaN low-noise amplifier with 0.4–1.1-dB noise figure X Tong, S Zhang, P Zheng, Y Huang, J Xu, X Shi, R Wang IEEE Microwave and Wireless Components Letters 29 (2), 134-136, 2019 | 50 | 2019 |
| Chemical modification of silicene R Wang, MS Xu, XD Pi Chinese Physics B 24 (8), 086807, 2015 | 41 | 2015 |
| Surface modification of chlorine-passivated silicon nanocrystals R Wang, X Pi, D Yang Physical Chemistry Chemical Physics 15 (6), 1815-1820, 2013 | 34 | 2013 |
| Degradation of Ka-band GaN LNA under high-input power stress: Experimental and theoretical insights X Tong, R Wang, S Zhang, J Xu, P Zheng, FX Chen IEEE Transactions on Electron Devices 66 (12), 5091-5096, 2019 | 27 | 2019 |
| Dislocations in 4H silicon carbide J Li, G Yang, X Liu, H Luo, L Xu, Y Zhang, C Cui, X Pi, D Yang, R Wang Journal of Physics D: Applied Physics 55 (46), 463001, 2022 | 24 | 2022 |
| Density functional theory study on organically surface-modified silicene R Wang, X Pi, Z Ni, Y Liu, D Yang RSC Advances 5 (43), 33831-33837, 2015 | 24 | 2015 |
| An 18–56-GHz wideband GaN low-noise amplifier with 2.2–4.4-dB noise figure X Tong, L Zhang, P Zheng, S Zhang, J Xu, R Wang IEEE Microwave and Wireless Components Letters 30 (12), 1153-1156, 2020 | 21 | 2020 |
| Chemical–mechanical polishing of 4H silicon carbide wafers W Wang, X Lu, X Wu, Y Zhang, R Wang, D Yang, X Pi Advanced Materials Interfaces 10 (13), 2202369, 2023 | 19 | 2023 |
| Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching W Geng, G Yang, X Zhang, X Zhang, Y Wang, L Song, P Chen, Y Zhang, ... Journal of Semiconductors 43 (10), 102801, 2022 | 18 | 2022 |
| Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC H Luo, J Li, G Yang, R Zhu, Y Zhang, R Wang, D Yang, X Pi ACS Applied Electronic Materials 4 (4), 1678-1683, 2022 | 18 | 2022 |
| An 18–31-GHz GaN-based LNA with 0.8-dB minimum NF and high robustness S Zhang, J Xu, P Zheng, R Wang, X Tong IEEE Microwave and Wireless Components Letters 30 (9), 896-899, 2020 | 17 | 2020 |
| Deformation of 4H-SiC: the role of dopants X Liu, J Zhang, B Xu, Y Lu, Y Zhang, R Wang, D Yang, X Pi Applied Physics Letters 120 (5), 2022 | 16 | 2022 |
| Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits G Yang, H Luo, J Li, Q Shao, Y Wang, R Zhu, X Zhang, L Song, Y Zhang, ... Journal of semiconductors 43 (12), 122801, 2022 | 15 | 2022 |
| Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation R Wang, J Xu, S Zhang, Y Zhang, P Zheng, Z Cheng, L Zhang, FX Chen, ... Journal of Materials Chemistry C 9 (9), 3177-3182, 2021 | 15 | 2021 |
| A 23–31 GHz robust low-noise amplifier with 1.1 dB noise figure and 28 dBm Psat P Zheng, S Zhang, J Xu, R Wang, X Tong 2019 49th European Microwave Conference (EuMC), 801-803, 2019 | 15 | 2019 |
| Enhanced performance of Se-alloyed CdTe solar cells: The role of Se-segregation on the grain boundaries R Wang, M Lan, SH Wei Journal of Applied Physics 129 (2), 2021 | 14 | 2021 |
| Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements Y Huang, R Wang, Y Qian, Y Zhang, D Yang, X Pi Chinese Physics B 31 (4), 046104, 2022 | 13 | 2022 |
| A 15–34 GHz robust GaN based low-noise amplifier with 0.8 dB minimum noise figure S Zhang, P Zheng, J Xu, R Wang, Y Huang, X Tong 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), 1-4, 2019 | 13 | 2019 |
Suhuai WeiEastern Institute of Technology, Ningbo, China在 eitech.edu.cn 的电子邮件经过验证
