| Desorption kinetics of GeO from GeO2/Ge structure SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi Journal of Applied Physics 108 (5), 054104, 2010 | 211 | 2010 |
| Ge/GeO2 interface control with high pressure oxidation for improving electrical characteristics CH Lee, T Tabata, T Nishimura, K Nagashio, K Kita, A Toriumi ECS Transactions 19 (1), 165-173, 2009 | 186 | 2009 |
| Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key A Toriumi, T Tabata, CH Lee, T Nishimura, K Kita, K Nagashio Microelectronic Engineering 86 (7), 1571-1576, 2009 | 180 | 2009 |
| Ge MOSFETs performance: Impact of Ge interface passivation CH Lee, T Nishimura, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi 2010 IEEE International Electron Devices Meeting (IEDM), 416-419, 2010 | 107 | 2010 |
| High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3 T Nishimura, CH Lee, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi Applied Physics Express 4 (6), 064201, 2011 | 97 | 2011 |
| Material potential and scalability challenges of germanium CMOS A Toriumi, CH Lee, SK Wang, T Tabata, M Yoshida, DD Zhao, ... 2011 IEEE International Electron Devices Meeting (IEDM), 646-649, 2011 | 59 | 2011 |
| Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors CH Lee, T Nishimura, T Tabata, DD Zhao, K Nagashio, A Toriumi Applied Physics Letters 102 (23), 232107, 2013 | 55 | 2013 |
| Oxygen potential engineering of interfacial layer for deep sub-nm EOT high-k gate stacks on Ge CH Lee, C Lu, T Tabata, WF Zhang, T Nishimura, K Nagashio, A Toriumi 2013 IEEE International Electron Devices Meeting (IEDM), 40-43, 2013 | 53 | 2013 |
| Doping of semiconductor devices by Laser Thermal Annealing (review article) K Huet, F Mazzamuto, T Tabata, I Toqué-Tresonne, Y Mori Materials Science in Semiconductor Processing 62, 92-102, 2017 | 52 | 2017 |
| Semiconductor structure having aluminum oxynitride film on germanium layer and method of fabricating the same A Toriumi, T Tabata US Patent 9,306,026, 2016 | 39 | 2016 |
| Enhancement of high-N s electron mobility in sub-nm EOT Ge n-MOSFETs CH Lee, C Lu, T Tabata, T Nishimura, K Nagashio, A Toriumi 2013 IEEE Symposium on VLSI Technology (VLSI), T28-T29, 2013 | 35 | 2013 |
| Impact of High Pressure O2 Annealing on Amorphous LaLuO3/Ge MIS Capacitors T Tabata, CH Lee, K Kita, A Toriumi ECS Transactions 16 (5), 479-486, 2008 | 27 | 2008 |
| 3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters A Vandooren, Z Wu, N Parihar, J Franco, B Parvais, P Matagne, ... 2020 IEEE Symposium on VLSI Technology (VLSI), TH3.2, 2020 | 21 | 2020 |
| Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal (editor's pick) T Tabata, J Aubin, K Huet, F Mazzamuto Journal of Applied Physics 125 (21), 215702, 2019 | 21 | 2019 |
| Reconsideration of electron mobility in Ge n-MOSFETs from Ge substrate side—Atomically flat surface formation, layer-by-layer oxidation, and dissolved oxygen extraction CH Lee, T Nishimura, T Tabata, C Lu, WF Zhang, K Nagashio, A Toriumi 2013 IEEE International Electron Devices Meeting (IEDM), 32-35, 2013 | 19 | 2013 |
| Recent Progress of Germanium Gate Stack Technology A Toriumi, CH Lee, T Tabata, S Wang, D Zhao, T Nishimura, K Kita, ... 2012 IEEE International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 | 19* | 2012 |
| Oxidation Rate Reduction of Ge with O2 Pressure Increase CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi Applied Physics Express 5 (11), 114001, 2012 | 16 | 2012 |
| Experimental study of carrier transport in ultra-thin body GeOI MOSFETs CH Lee, T Nishimura, T Tabata, D Zhao, R Ifuku, K Nagashio, K Kita, ... 2011 IEEE International SOI Conference (SOI), 2011 | 15 | 2011 |
| Nucleation and crystal growth in HfO2 thin films by UV nanosecond pulsed laser annealing T Tabata Applied Physics Express 13 (1), 015509, 2019 | 14 | 2019 |
| Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal–Oxide–Semiconductor Field-Effect Transistors CH Lee, T Nishimura, T Tabata, K Nagashio, K Kita, A Toriumi Japanese Journal of Applied Physics 51 (10R), 104203, 2012 | 12 | 2012 |
