| Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO2/TiO2 Devices D Li, AA Sharma, DK Gala, N Shukla, H Paik, S Datta, DG Schlom, ... ACS applied materials & interfaces 8 (20), 12908-12914, 2016 | 136 | 2016 |
| Switching dynamics of TaOx-based threshold switching devices JM Goodwill, DK Gala, JA Bain, M Skowronski Journal of Applied Physics 123 (11), 2018 | 31 | 2018 |
| Low temperature electroformation of TaOx-based resistive switching devices DK Gala, AA Sharma, D Li, JM Goodwill, JA Bain, M Skowronski Apl Materials 4 (1), 2016 | 13 | 2016 |
| Phase based boolean computation using GeTe6 oscillators YE Kesim, D Gala, JA Bain, JA Weldon 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 850-854, 2017 | 6 | 2017 |
| Dielectric and ferroelectric properties of containing lead titanate based glass-ceramics VU Rahangdale, DK Gala, RM Acharya, VK Deshpande AIP Conference Proceedings 1591 (1), 705-707, 2014 | 3 | 2014 |
| Impact Ionization model for S-NDR based threshold switching devices Y Zou, DK Gala, JA Bain 2019 Device Research Conference (DRC), 107-108, 2019 | 1 | 2019 |
| Electronic Properties and Carrier Transport in Oxides and Chalcogenides for Resistive Switching Devices DK Gala Carnegie Mellon University, 2020 | | 2020 |
James A. BainProfessor of ECE, Carnegie Mellon University在 ece.cmu.edu 的电子邮件经过验证
