| Simultaneous two-state lasing in quantum-dot lasers A Markus, JX Chen, C Paranthoen, A Fiore, C Platz, O Gauthier-Lafaye Applied Physics Letters 82 (12), 1818-1820, 2003 | 364 | 2003 |
| Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm C Paranthoen, N Bertru, O Dehaese, A Le Corre, S Loualiche, B Lambert, ... Applied Physics Letters 78 (12), 1751-1753, 2001 | 211 | 2001 |
| Impact of intraband relaxation on the performance of a quantum-dot laser A Markus, JX Chen, O Gauthier-Lafaye, JG Provost, C Paranthoën, ... IEEE Journal of Selected Topics in Quantum Electronics 9 (5), 1308-1314, 2003 | 196 | 2003 |
| High-gain and low-threshold InAs quantum-dot lasers on InP P Caroff, C Paranthoen, C Platz, O Dehaese, H Folliot, N Bertru, C Labbe, ... Applied Physics Letters 87 (24), 2005 | 172 | 2005 |
| Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser C Paranthoen, C Platz, G Moreau, N Bertru, O Dehaese, A Le Corre, ... Journal of crystal growth 251 (1-4), 230-235, 2003 | 75 | 2003 |
| Carrier diffusion in low-dimensional semiconductors: A comparison of quantum wells, disordered quantum wells, and quantum dots A Fiore, M Rossetti, B Alloing, C Paranthoen, JX Chen, L Geelhaar, ... Physical Review B—Condensed Matter and Materials Physics 70 (20), 205311, 2004 | 67 | 2004 |
| Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission P Miska, C Paranthoen, J Even, O Dehaese, H Folliot, N Bertru, ... Semiconductor science and technology 17 (10), L63, 2002 | 53 | 2002 |
| Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection C Platz, C Paranthoën, P Caroff, N Bertru, C Labbé, J Even, O Dehaese, ... Semiconductor science and technology 20 (5), 459, 2005 | 49 | 2005 |
| Vertical electronic coupling between InAs∕ InP quantum-dot layers emitting in the near-infrared range P Miska, J Even, C Paranthoen, O Dehaese, A Jbeli, M Senes, X Marie Applied Physics Letters 86 (11), 2005 | 44 | 2005 |
| Comparison of radiative and structural properties of 1.3 μm quantum-dot laser structures grown by metalorganic chemical vapor deposition and … A Passaseo, M De Vittorio, MT Todaro, I Tarantini, M De Giorgi, ... Applied physics letters 82 (21), 3632-3634, 2003 | 44 | 2003 |
| Three-dimensional wavelength-scale confinement in quantum dot microcavity light-emitting diodes C Zinoni, B Alloing, C Paranthoen, A Fiore Applied physics letters 85 (12), 2178-2180, 2004 | 40 | 2004 |
| Tunable semiconductor vertical-cavity surface-emitting laser with an intracavity liquid crystal layer O Castany, L Dupont, A Shuaib, JP Gauthier, C Levallois, C Paranthoen Applied Physics Letters 98 (16), 2011 | 35 | 2011 |
| Impact of the capping layers on lateral confinement in InAs∕ InP quantum dots for 1.55 μm laser applications studied by magnetophotoluminescence C Cornet, C Levallois, P Caroff, H Folliot, C Labbé, J Even, A Le Corre, ... Applied Physics Letters 87 (23), 2005 | 33 | 2005 |
| Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113) B InP substrates P Miska, C Paranthoen, J Even, N Bertru, A Le Corre, O Dehaese Journal of Physics: Condensed Matter 14 (47), 12301, 2002 | 33 | 2002 |
| Room temperature laser emission of 1.5 μm from InAs/InP (311) B quantum dots C Paranthoen, N Bertru, B Lambert, O Dehaese, A Le Corre, J Even, ... Semiconductor science and technology 17 (2), L5, 2002 | 33 | 2002 |
| Acoustic-phonon Raman scattering in InAs/InP self-assembled quantum dots JR Huntzinger, J Groenen, M Cazayous, A Mlayah, N Bertru, ... Physical Review B 61 (16), R10547, 2000 | 27 | 2000 |
| Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots C Cornet, M Hayne, P Caroff, C Levallois, L Joulaud, E Homeyer, ... Physical Review B—Condensed Matter and Materials Physics 74 (24), 245315, 2006 | 25 | 2006 |
| Si wafer bonded of a‐Si∕ a‐SiNx distributed Bragg reflectors for 1.55‐μm-wavelength vertical cavity surface emitting lasers C Levallois, A Le Corre, S Loualiche, O Dehaese, H Folliot, C Paranthoen, ... Journal of applied physics 98 (4), 2005 | 24 | 2005 |
| Polarization control of 1.6 μm vertical-cavity surface-emitting lasers using InAs quantum dashes on InP (001) JM Lamy, C Paranthoen, C Levallois, A Nakkar, H Folliot, JP Gauthier, ... Applied Physics Letters 95 (1), 2009 | 23 | 2009 |
| Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD L Pedesseau, J Even, A Bondi, W Guo, S Richard, H Folliot, C Labbé, ... Journal of Physics D: Applied Physics 41 (16), 165505, 2008 | 20 | 2008 |
