| Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices U Celano, L Goux, A Belmonte, K Opsomer, A Franquet, A Schulze, ... Nano letters 14 (5), 2401-2406, 2014 | 367 | 2014 |
| How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches B Kunert, Y Mols, M Baryshniskova, N Waldron, A Schulze, R Langer Semiconductor Science and Technology 33 (9), 093002, 2018 | 167 | 2018 |
| Vertically stacked gate-all-around Si nanowire transistors: Key process optimizations and ring oscillator demonstration H Mertens, R Ritzenthaler, V Pena, G Santoro, K Kenis, A Schulze, ... 2017 IEEE International Electron Devices Meeting (IEDM), 37.4. 1-37.4. 4, 2017 | 127 | 2017 |
| ECS Meeting Abstracts R Loo, AY Hikavyy, L Witters, A Schulze, H Arimura, D Cott, J Mitard, ... | 104* | |
| Strained germanium gate-all-around PMOS device demonstration using selective wire release etch prior to replacement metal gate deposition L Witters, F Sebaai, A Hikavyy, AP Milenin, R Loo, A De Keersgieter, ... VLSI Technology, 2017 Symposium on, T194-T195, 2017 | 81 | 2017 |
| First Demonstration of Vertically Stacked Gate-All-Around Highly Strained Germanium Nanowire pFETs E Capogreco, L Witters, H Arimura, F Sebaai, C Porret, A Hikavyy, R Loo, ... IEEE Transactions on Electron Devices 65 (11), 5145-5150, 2018 | 70 | 2018 |
| In-situ observation of non-hemispherical tip shape formation during laser-assisted atom probe tomography S Koelling, N Innocenti, A Schulze, M Gilbert, AK Kambham, ... Journal of Applied Physics 109 (10), 104909, 2011 | 55 | 2011 |
| Observation of diameter dependent carrier distribution in nanowire-based transistors A Schulze, T Hantschel, P Eyben, AS Verhulst, R Rooyackers, ... Nanotechnology 22 (18), 185701, 2011 | 51 | 2011 |
| Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects A Schulze, T Hantschel, A Dathe, P Eyben, X Ke, W Vandervorst Nanotechnology 23 (30), 305707, 2012 | 48 | 2012 |
| Processing Technologies for Advanced Ge Devices R Loo, AY Hikavyy, L Witters, A Schulze, H Arimura, D Cott, J Mitard, ... ECS Journal of Solid State Science and Technology 6 (1), P14-P20, 2017 | 42 | 2017 |
| Conductive-AFM tomography for 3D filament observation in resistive switching devices U Celano, L Goux, A Belmonte, A Schulze, K Opsomer, C Detavernier, ... 2013 IEEE International Electron Devices Meeting, 21.6. 1-21.6. 4, 2013 | 41 | 2013 |
| Dopant/carrier profiling for 3D‐structures W Vandervorst, A Schulze, AK Kambham, J Mody, M Gilbert, P Eyben physica status solidi (c) 11 (1), 121-129, 2014 | 37 | 2014 |
| Fundamentals of PICOSCIENCE KD Sattler CRC Press, 2013 | 34 | 2013 |
| Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel G Hellings, L Witters, R Krom, J Mitard, A Hikavyy, R Loo, A Schulze, ... 2010 International Electron Devices Meeting, 10.4. 1-10.4. 4, 2010 | 30 | 2010 |
| A 2nd Generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs J Mitard, L Witters, Y Sasaki, H Arimura, A Schulze, R Loo, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 28 | 2016 |
| Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon S Koelling, O Richard, H Bender, M Uematsu, A Schulze, G Zschaetzsch, ... Nano letters 13 (6), 2458-2462, 2013 | 28 | 2013 |
| Non-destructive characterization of extended crystalline defects in confined semiconductor device structures A Schulze, L Strakos, T Vystavel, R Loo, A Pacco, N Collaert, ... Nanoscale 10 (15), 7058-7066, 2018 | 27 | 2018 |
| Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates W Guo, Y Mols, J Belz, A Beyer, K Volz, A Schulze, R Langer, B Kunert Journal of Applied Physics 122 (2), 025303, 2017 | 26 | 2017 |
| 3D-carrier profiling in FinFETs using scanning spreading resistance microscopy J Mody, G Zschätzsch, S Kölling, A De Keersgieter, G Eneman, ... 2011 International Electron Devices Meeting, 6.1. 1-6.1. 4, 2011 | 25 | 2011 |
| Direct and indirect optical transitions in bulk and atomically thin MoS2 studied by photoreflectance and photoacoustic spectroscopy J Kopaczek, SJ Zelewski, MP Polak, A Gawlik, D Chiappe, A Schulze, ... Journal of Applied Physics 125 (13), 135701, 2019 | 24 | 2019 |
