| Defect-engineered graphene chemical sensors with ultrahigh sensitivity G Lee, G Yang, A Cho, JW Han, J Kim Physical Chemistry Chemical Physics 18 (21), 14198-14204, 2016 | 141 | 2016 |
| Suspended black phosphorus nanosheet gas sensors G Lee, S Kim, S Jung, S Jang, J Kim Sensors and Actuators B: Chemical 250, 569-573, 2017 | 140 | 2017 |
| Artificial neuron and synapse devices based on 2D materials G Lee, JH Baek, F Ren, SJ Pearton, GH Lee, J Kim Small 17 (20), 2100640, 2021 | 135 | 2021 |
| Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching Y Kwon, G Lee, S Oh, J Kim, SJ Pearton, F Ren Applied Physics Letters 110 (13), 2017 | 105 | 2017 |
| Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation J Kim, G Lee, J Kim Applied Physics Letters 107 (3), 2015 | 86 | 2015 |
| Platinum-functionalized black phosphorus hydrogen sensors G Lee, S Jung, S Jang, J Kim Applied Physics Letters 110 (24), 2017 | 64 | 2017 |
| Tuning the thickness of black phosphorus via ion bombardment-free plasma etching for device performance improvement G Lee, JY Lee, GH Lee, J Kim Journal of Materials Chemistry C 4 (26), 6234-6239, 2016 | 52 | 2016 |
| Two-Dimensionally Layered p-Black Phosphorus/n-MoS2/p-Black Phosphorus Heterojunctions G Lee, SJ Pearton, F Ren, J Kim ACS applied materials & interfaces 10 (12), 10347-10352, 2018 | 51 | 2018 |
| Precise control of defects in graphene using oxygen plasma G Lee, J Kim, K Kim, JW Han Journal of Vacuum Science & Technology A 33 (6), 2015 | 46 | 2015 |
| Selective p-Doping of 2D WSe2 via UV/Ozone Treatments and Its Application in Field-Effect Transistors S Yang, G Lee, J Kim ACS Applied Materials & Interfaces 13 (1), 955-961, 2020 | 38 | 2020 |
| 2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification G Lee, SJ Pearton, F Ren, J Kim Advanced Electronic Materials 5 (3), 1800745, 2019 | 36 | 2019 |
| Ambipolar Charge Transport in Two-Dimensional WS2 Metal–Insulator–Semiconductor and Metal–Insulator–Semiconductor Field-Effect Transistors G Lee, S Oh, J Kim, J Kim ACS applied materials & interfaces 12 (20), 23127-23133, 2020 | 34 | 2020 |
| An in-plane WSe 2 p–n homojunction two-dimensional diode by laser-induced doping S Yang, G Lee, J Kim, S Yang, CH Lee, J Kim Journal of Materials Chemistry C 8 (25), 8393-8398, 2020 | 25 | 2020 |
| Ultra-wide bandgap β-Ga2O3 heterojunction field-effect transistor using p-type 4H-SiC gate for efficient thermal management D Lee, HW Kim, J Kim, JH Moon, G Lee, J Kim ECS Journal of Solid State Science and Technology 9 (6), 065006, 2020 | 16 | 2020 |
| Chemical doping effects of gas molecules on black phosphorus field-effect transistors S Kim, G Lee, J Kim ECS Journal of Solid State Science and Technology 7 (7), Q3065, 2018 | 13 | 2018 |
| Capacitive Chemical Sensors Based on Two-Dimensional WSe2 A Kim, G Lee, S Kim, J Kim ECS Journal of Solid State Science and Technology 9 (11), 115020, 2020 | 7 | 2020 |
| Intimate Ohmic contact to two-dimensional WSe2 via thermal alloying H Kim, H Park, G Lee, J Kim Nanotechnology 30 (41), 415302, 2019 | 5 | 2019 |
| Improvement of conductivity in graphene by Ag nanowires under a non-uniform electric field G Lee, S Oh, BJ Kim, J Kim ECS Solid State Letters 3 (12), M41, 2014 | 4 | 2014 |
| Capacitance–voltage characteristics of Pt/hBN/WSe2 metal–insulator–semiconductor capacitor doped by charge-transfer process HH Im, G Lee, H Park, D Lee, J Kim Applied Physics Letters 120 (2), 2022 | 3 | 2022 |
| Capacitive β-Ga2O3 solar-blind photodetector with graphene electrode A Kim, G Lee, J Kim Journal of Vacuum Science & Technology A 39 (5), 2021 | 3 | 2021 |
