| Interaction-and defect-free van der Waals contacts between metals and two-dimensional semiconductors G Kwon, YH Choi, H Lee, HS Kim, J Jeong, K Jeong, M Baik, H Kwon, ... Nature Electronics 5 (4), 241-247, 2022 | 137 | 2022 |
| Improvement of electrical performance using PtSe2/PtTe2 edge contact synthesized by molecular beam epitaxy HS Kim, J Jeong, GH Kwon, H Kwon, M Baik, MH Cho Applied Surface Science 585, 152507, 2022 | 18 | 2022 |
| Ferroelastic–ferroelectric multiferroicity in van der Waals rhenium dichalcogenides J Jeong, HS Kim, G Kwon, K Jeong, H Lee, JH Lee, M Park, C Lee, S Yu, ... Advanced Materials 34 (18), 2108777, 2022 | 14 | 2022 |
| Trap-assisted high responsivity of a phototransistor using bi-layer MoSe2 grown by molecular beam epitaxy YH Choi, GH Kwon, JH Jeong, KS Jeong, H Kwon, Y An, M Kim, H Kim, ... Applied Surface Science 494, 37-45, 2019 | 10 | 2019 |
| Broadband and ultrafast photodetector based on PtSe2 synthesized on hBN using molecular beam epitaxy HS Kim, G Kwon, J Jeong, HJ Lee, S Kim, W Koh, H Park, G Nam, K Oh, ... Applied Surface Science 638, 158103, 2023 | 9 | 2023 |
| Ultrathin platinum diselenide synthesis controlling initial growth kinetics: Interfacial reaction depending on thickness and substrate HS Kim, J Jeong, GH Kwon, S Park, K Jeong, YH Choi, H Kwon, M Baik, ... Applied Surface Science 564, 150300, 2021 | 8 | 2021 |
| Advanced interfacial phase change material: Structurally confined and interfacially extended superlattice H Lim, Y Kim, KJ Jo, C Seok, CW Lee, D Kim, G Kwon, H Kwon, S Hwang, ... Materials Today 68, 62-73, 2023 | 5 | 2023 |
| Forming stable van der Waals contacts between metals and 2D semiconductors G Kwon, HS Kim, K Jeong, M Kim, GH Nam, H Park, K Yoo, MH Cho Small Methods 7 (9), 2300376, 2023 | 3 | 2023 |
| Positive charge-mediated phase modulation of MoTe2 synthesized by molecular beam epitaxy J Jeong, HS Kim, G Kwon, J Park, D Kim, Y Yi, MH Cho Applied Surface Science 623, 156988, 2023 | 2 | 2023 |
| High performance broadband photodetector in two-dimensional metal dichalcogenides mediated by topologically protected surface state D Kim, J Chae, SB Hong, J Kim, G Kwon, H Kwon, K Jeong, MH Cho Applied Surface Science 643, 158666, 2024 | | 2024 |
| Semiconductor device and method of fabricating the same MH Cho, GH Kwon US Patent App. 17/968,169, 2023 | | 2023 |
