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Houssam Halhoul
Houssam Halhoul
PhD student
在 fbh-berlin.de 的电子邮件经过验证
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1.17 GW/cm2 AlN-based GaN-channel HEMTs on mono-crystalline AlN substrate
M Wolf, F Brunner, C Last, H Halhoul, D Rentner, EB Treidel, J Würfl, ...
IEEE Electron Device Letters, 2024
12024
Overlapping source field plate process module for high-voltage GaN HFETs with low off state leakage currents
H Halhoul, RS Unger, F Brunner, O Hilt
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文章 1–2