Ultrafast intersubband relaxation (⩽ 150 fs) in AlGaN/GaN multiple quantum wells N Iizuka, K Kaneko, N Suzuki, T Asano, S Noda, O Wada Applied Physics Letters 77 (5), 648-650, 2000 | 269 | 2000 |
Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSixcontacts M Ito, O Wada IEEE Journal of Quantum Electronics 22 (7), 1073-1077, 1986 | 240 | 1986 |
Femtosecond all-optical devices for ultrafast communication and signal processing O Wada New Journal of Physics 6 (1), 183, 2004 | 235 | 2004 |
Temperature dependence of GaAs1-xBix band gap studied by photoreflectance spectroscopy J Yoshida, T Kita, O Wada, K Oe Japanese journal of applied physics 42 (2R), 371, 2003 | 227 | 2003 |
Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices T Akiyama, H Kuwatsuka, T Simoyama, Y Nakata, K Mukai, M Sugawara, ... IEEE Journal of Quantum Electronics 37 (8), 1059-1065, 2001 | 157 | 2001 |
Recent progress in optoelectric integrated circuits (OEIC's) O Wada, T Sakurai, T Nakagami IEEE journal of quantum electronics 22 (6), 805-821, 1986 | 132 | 1986 |
Electron spin relaxation in InGaAs/InP multiple-quantum wells A Tackeuchi, O Wada, Y Nishikawa Applied Physics Letters 70 (9), 1131-1133, 1997 | 131 | 1997 |
Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers T Akiyama, O Wada, H Kuwatsuka, T Simoyama, Y Nakata, K Mukai, ... Applied Physics Letters 77 (12), 1753-1755, 2000 | 113 | 2000 |
Room‐temperature electron spin dynamics in GaAs/AlGaAs quantum wells A Tackeuchi, Y Nishikawa, O Wada Applied physics letters 68 (6), 797-799, 1996 | 109 | 1996 |
Very high speed GaInAs metal‐semiconductor‐metal photodiode incorporating an AlInAs/GaInAs graded superlattice O Wada, H Nobuhara, H Hamaguchi, T Mikawa, A Tackeuchi, T Fujii Applied physics letters 54 (1), 16-17, 1989 | 108 | 1989 |
Polarization-independent photoluminescence from columnar InAs/GaAs self-assembled quantum dots T Kita, O Wada, H Ebe, Y Nakata, M Sugawara Japanese journal of applied physics 41 (10B), L1143, 2002 | 107 | 2002 |
Design of impurity band-based photonic crystal waveguides and delay lines for ultrashort optical pulses S Lan, S Nishikawa, H Ishikawa, O Wada Journal of Applied Physics 90 (9), 4321-4327, 2001 | 103 | 2001 |
Terahertz demultiplexing by a single-shot time-to-space conversion using a film of squarylium dye J aggregates M Furuki, M Tian, Y Sato, LS Pu, S Tatsuura, O Wada Applied Physics Letters 77 (4), 472-474, 2000 | 102 | 2000 |
InP-based materials and devices: physics and technology O Wada (No Title), 1999 | 98 | 1999 |
Nonlinearity and recovery time of 1.55 µm intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells T Akiyama, N Georgiev, T Mozume, H Yoshida, AV Gopal, O Wada Electronics Letters 37 (2), 129-130, 2001 | 97 | 2001 |
Reliability of high radiance InGaAsP/InP LED́s operating in the 1.2-1.3 µm wavelength S Yamakoshi, M Abe, O Wada, S Komiya, T Sakurai IEEE Journal of Quantum Electronics 17 (2), 167-173, 1981 | 97 | 1981 |
1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells T Akiyama, N Georgiev, T Mozume, H Yoshida, AV Gopal, O Wada IEEE Photonics Technology Letters 14 (4), 495-497, 2002 | 95 | 2002 |
Artificial control of optical gain polarization by stacking quantum dot layers T Kita, N Tamura, O Wada, M Sugawara, Y Nakata, H Ebe, Y Arakawa Applied physics letters 88 (21), 2006 | 92 | 2006 |
Ultrafast all-optical spin polarization switch using quantum-well etalon Y Nishikawa, A Tackeuchi, M Yamaguchi, S Muto, O Wada IEEE Journal of Selected Topics in Quantum Electronics 2 (3), 661-667, 1996 | 90 | 1996 |
InP Schottky contacts with increased barrier height O Wada, A Majerfield, PN Robson Solid-State Electronics 25 (5), 381-387, 1982 | 84 | 1982 |