| Temperature-dependent Defect Behaviors in Ferroelectric Hf0.5Zr0.5O2 Thin Film: Re-wakeup Phenomenon and Underlying Mechanisms X Li, J Wu, L Tai, W Wei, P Sang, Y Feng, B Chen, G Zhao, X Zhan, ... 2022 International Electron Devices Meeting (IEDM), 32.3. 1-32.3. 4, 2022 | 11 | 2022 |
| Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf0.5Zr0.5O2 Films L Tai, W Wei, P Sang, X Li, G Zhao, P Jiang, P Yuan, Q Luo, X Zhan, J Wu, ... IEEE Electron Device Letters 44 (5), 753-756, 2023 | 8 | 2023 |
| Towards Low-thermal-budget Processing in Ferroelectric Hf0.5Zr0.5O2 Thin Films by Ozone Interface Oxidation L Tai, W Wei, P Jiang, P Sang, X Li, G Zhao, X Dou, X Zhan, Q Luo, J Wu, ... IEEE Electron Device Letters, 2023 | 7 | 2023 |
| Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair X Li, L Tai, G Zhao, X Zhan, X Wang, M Kobayashi, J Wu, J Chen IEEE Electron Device Letters 44 (8), 1288-1291, 2023 | 6 | 2023 |
| Suppressing Interfacial Layer Degradation in -based FeFETs Using a Pre-erase Strategy during Program/Erase Cycling G Zhao, W Wei, L Tai, M Tang, X Li, H Xu, J Chai, X Wang, J Wu, X Zhan, ... 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2022 | 5 | 2022 |
| Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation X Dou, W Wei, P Sang, L Tai, X Li, X Zhan, J Wu, J Chen Applied Physics Letters 124 (9), 2024 | 4 | 2024 |
| Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf0. 5Zr0. 5O2 film through comprehensive TDDB characterizations X Li, W Wei, J Wu, L Tai, X Zhan, W Zhang, M Tang, G Zhao, H Xu, J Chai, ... Japanese Journal of Applied Physics 61 (10), 101002, 2022 | 4 | 2022 |
| In-depth investigation of seed layer engineering in ferroelectric Hf0. 5Zr0. 5O2 film: Wakeup-free achievement and reliability mechanisms X Li, J Wu, L Tai, X Dou, P Sang, H Xu, X Zhan, X Wang, J Chen IEEE Transactions on Electron Devices 71 (2), 1048-1053, 2024 | 2 | 2024 |
| Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0. 5Zr0. 5O2 film under low-temperature, long-term annealing L Tai, X Li, X Dou, P Sang, X Zhan, J Wu, J Chen Applied Physics Letters 125 (9), 2024 | | 2024 |
| Imprint-Correlated Retention Loss in HfZrO Ferroelectric Thin Film Through Wide-Temperature Characterizations X Li, L Tai, P Sang, X Dou, X Zhan, H Xu, X Wang, J Wu, J Chen IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Impact of Time Delay Schemes on Reliability Degradation during Program/Erase Cycling in HZO-based FeFETs X Li, G Zhao, L Tai, P Sang, X Dou, X Zhan, X Wang, J Wu, J Chen 2024 IEEE Silicon Nanoelectronics Workshop (SNW), 33-34, 2024 | | 2024 |
| Silicon Atomic-Layer Doped HfZrO Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance ( Cycles) L Tai, W Wei, P Sang, X Li, X Dou, G Zhao, P Jiang, Q Luo, X Zhan, J Wu, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Enhanced Ferroelectricity of Hf‐Based Memcapacitors by Adopting Ti Insert‐Layer and C–V Measurement for Constructing Energy‐Efficient Reservoir Computing Network B Chen, Y Wu, Y Liu, X Li, L Tai, P Sang, J Wu, X Zhan, J Chen Advanced Electronic Materials, 2400395, 2024 | | 2024 |
| In-Depth Investigation of Seed Layer Engineering in Ferroelectric HfZrOTEXPRESERVE2 Film: Wakeup-Free Achievement and Reliability Mechanisms X Li, J Wu, L Tai, X Dou, P Sang, H Xu, X Zhan, X Wang, J Chen IEEE Transactions on Electron Devices, 2023 | | 2023 |
