Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa (1− x) N double quantum wells operating at 1.55 μm H Dakhlaoui Journal of Applied Physics 117 (13), 2015 | 55 | 2015 |
Tunability of the optical absorption and refractive index changes in step-like and parabolic quantum wells under external electric field H Dakhlaoui Optik 168, 416-423, 2018 | 41 | 2018 |
Effects of magnetic, electric, and intense laser fields on the optical properties of AlGaAs/GaAs quantum wells for terahertz photodetectors ALN Aishah, H Dakhlaoui, T Ghrib, BM Wong Physica B: Condensed Matter 635, 413838, 2022 | 32 | 2022 |
The effects of doping layer location on the electronic and optical properties of GaN step quantum well H Dakhlaoui Superlattices and Microstructures 97, 439-447, 2016 | 29 | 2016 |
Effect of Si δ-doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure H Dakhlaoui, S Almansour, E Algrafy Superlattices and Microstructures 77, 196-208, 2015 | 28 | 2015 |
Tuning the linear and nonlinear optical properties in double and triple δ− doped GaAs semiconductor: Impact of electric and magnetic fields H Dakhlaoui, M Nefzi Superlattices and Microstructures 136, 106292, 2019 | 26 | 2019 |
Enhancement of the optical absorption in MgZnO/ZnO quantum well under external electric field H Dakhlaoui, M Nefzi Optik 157, 1342-1349, 2018 | 24 | 2018 |
External fields controlling the nonlinear optical properties of quantum cascade laser based on staircase-like quantum wells H Dakhlaoui, JA Vinasco, CA Duque Superlattices and Microstructures 155, 106885, 2021 | 23 | 2021 |
Optical properties of a quantum well with Razavy confinement potential: Role of applied external fields A Turkoglu, H Dakhlaoui, ME Mora-Ramos, F Ungan Physica E: Low-dimensional Systems and Nanostructures 134, 114919, 2021 | 20 | 2021 |
Modulating the conductance in graphene nanoribbons with multi-barriers under an applied voltage H Dakhlaoui, S Almansour, W Belhadj, BM Wong Results in Physics 27, 104505, 2021 | 20 | 2021 |
Quantum size and magnesium composition effects on the optical absorption in the MgxZn (1− x) O/ZnO quantum well H ben Bechir Dakhlaoui, N Mouna Chemical Physics Letters 693, 40-45, 2018 | 20 | 2018 |
Theoretical investigation of linear and nonlinear optical properties in an heterostructure based on triple parabolic barriers: Effects of external fields H Dakhlaoui, F Ungan, JC Martínez-Orozco, ME Mora-Ramos Physica B: Condensed Matter 607, 412782, 2021 | 18 | 2021 |
Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural … H Dakhlaoui, I Altuntas, ME Mora-Ramos, F Ungan The European Physical Journal Plus 136 (8), 894, 2021 | 16 | 2021 |
Magnetic properties in III–V diluted magnetic semiconductor quantum wells H Dakhlaoui, S Jaziri Physica B: Condensed Matter 355 (1-4), 401-407, 2005 | 16 | 2005 |
Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential I Altuntas, H Dakhlaoui, ME Mora-Ramos, F Ungan The European Physical Journal Plus 136 (11), 1174, 2021 | 15 | 2021 |
Quantum tunneling mechanisms in monolayer graphene modulated by multiple electrostatic barriers H Dakhlaoui, W Belhadj, BM Wong Results in Physics 26, 104403, 2021 | 15 | 2021 |
Influence of doping layer concentration on the electronic transitions in symmetric AlxGa (1 x) N/GaN double quantum wells H Dakhlaoui Optik-International Journal for Light and Electron Optics 124 (18), 3726-3729, 2013 | 15 | 2013 |
Numerical study of optical absorption coefficients in Manning-like AlGaAs/GaAs double quantum wells: Effects of doped impurities H Dakhlaoui, W Belhadj, AS Durmuslar, F Ungan, A Abdelkader Physica E: Low-Dimensional Systems and Nanostructures 147, 115623, 2023 | 14 | 2023 |
Simultaneous effect of impurities, hydrostatic pressure, and applied potential on the optical absorptions in a GaAs field-effect transistor H Dakhlaoui, M Nefzi Results in Physics 15, 102618, 2019 | 14 | 2019 |
Intersubband transitions in InxAl (1− x) N/InyGa (1− y) N quantum well operating at 1.55 μm H Dakhlaoui Chinese Physics B 23 (9), 097304, 2014 | 14 | 2014 |