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Hassen Dakhlaoui
Hassen Dakhlaoui
Imam Abdulrahman Bin Faisal University
在 iau.edu.sa 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa (1− x) N double quantum wells operating at 1.55 μm
H Dakhlaoui
Journal of Applied Physics 117 (13), 2015
552015
Tunability of the optical absorption and refractive index changes in step-like and parabolic quantum wells under external electric field
H Dakhlaoui
Optik 168, 416-423, 2018
412018
Effects of magnetic, electric, and intense laser fields on the optical properties of AlGaAs/GaAs quantum wells for terahertz photodetectors
ALN Aishah, H Dakhlaoui, T Ghrib, BM Wong
Physica B: Condensed Matter 635, 413838, 2022
322022
The effects of doping layer location on the electronic and optical properties of GaN step quantum well
H Dakhlaoui
Superlattices and Microstructures 97, 439-447, 2016
292016
Effect of Si δ-doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure
H Dakhlaoui, S Almansour, E Algrafy
Superlattices and Microstructures 77, 196-208, 2015
282015
Tuning the linear and nonlinear optical properties in double and triple δ− doped GaAs semiconductor: Impact of electric and magnetic fields
H Dakhlaoui, M Nefzi
Superlattices and Microstructures 136, 106292, 2019
262019
Enhancement of the optical absorption in MgZnO/ZnO quantum well under external electric field
H Dakhlaoui, M Nefzi
Optik 157, 1342-1349, 2018
242018
External fields controlling the nonlinear optical properties of quantum cascade laser based on staircase-like quantum wells
H Dakhlaoui, JA Vinasco, CA Duque
Superlattices and Microstructures 155, 106885, 2021
232021
Optical properties of a quantum well with Razavy confinement potential: Role of applied external fields
A Turkoglu, H Dakhlaoui, ME Mora-Ramos, F Ungan
Physica E: Low-dimensional Systems and Nanostructures 134, 114919, 2021
202021
Modulating the conductance in graphene nanoribbons with multi-barriers under an applied voltage
H Dakhlaoui, S Almansour, W Belhadj, BM Wong
Results in Physics 27, 104505, 2021
202021
Quantum size and magnesium composition effects on the optical absorption in the MgxZn (1− x) O/ZnO quantum well
H ben Bechir Dakhlaoui, N Mouna
Chemical Physics Letters 693, 40-45, 2018
202018
Theoretical investigation of linear and nonlinear optical properties in an heterostructure based on triple parabolic barriers: Effects of external fields
H Dakhlaoui, F Ungan, JC Martínez-Orozco, ME Mora-Ramos
Physica B: Condensed Matter 607, 412782, 2021
182021
Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural …
H Dakhlaoui, I Altuntas, ME Mora-Ramos, F Ungan
The European Physical Journal Plus 136 (8), 894, 2021
162021
Magnetic properties in III–V diluted magnetic semiconductor quantum wells
H Dakhlaoui, S Jaziri
Physica B: Condensed Matter 355 (1-4), 401-407, 2005
162005
Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential
I Altuntas, H Dakhlaoui, ME Mora-Ramos, F Ungan
The European Physical Journal Plus 136 (11), 1174, 2021
152021
Quantum tunneling mechanisms in monolayer graphene modulated by multiple electrostatic barriers
H Dakhlaoui, W Belhadj, BM Wong
Results in Physics 26, 104403, 2021
152021
Influence of doping layer concentration on the electronic transitions in symmetric AlxGa (1⿿ x) N/GaN double quantum wells
H Dakhlaoui
Optik-International Journal for Light and Electron Optics 124 (18), 3726-3729, 2013
152013
Numerical study of optical absorption coefficients in Manning-like AlGaAs/GaAs double quantum wells: Effects of doped impurities
H Dakhlaoui, W Belhadj, AS Durmuslar, F Ungan, A Abdelkader
Physica E: Low-Dimensional Systems and Nanostructures 147, 115623, 2023
142023
Simultaneous effect of impurities, hydrostatic pressure, and applied potential on the optical absorptions in a GaAs field-effect transistor
H Dakhlaoui, M Nefzi
Results in Physics 15, 102618, 2019
142019
Intersubband transitions in InxAl (1− x) N/InyGa (1− y) N quantum well operating at 1.55 μm
H Dakhlaoui
Chinese Physics B 23 (9), 097304, 2014
142014
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