| Correlation between dislocations and leakage current of pn diodes on a free-standing GaN substrate S Usami, Y Ando, A Tanaka, K Nagamatsu, M Deki, M Kushimoto, S Nitta, ... Applied Physics Letters 112 (18), 2018 | 186 | 2018 |
| Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown H Fukushima, S Usami, M Ogura, Y Ando, A Tanaka, M Deki, ... Applied Physics Express 12 (2), 026502, 2019 | 83 | 2019 |
| Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes L Sang, B Ren, M Sumiya, M Liao, Y Koide, A Tanaka, Y Cho, Y Harada, ... Applied physics letters 111 (12), 2017 | 61 | 2017 |
| Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current S Usami, N Mayama, K Toda, A Tanaka, M Deki, S Nitta, Y Honda, ... Applied Physics Letters 114 (23), 2019 | 56 | 2019 |
| Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability H Fukushima, S Usami, M Ogura, Y Ando, A Tanaka, M Deki, ... Japanese Journal of Applied Physics 58 (SC), SCCD25, 2019 | 53 | 2019 |
| Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes … S Usami, A Tanaka, H Fukushima, Y Ando, M Deki, S Nitta, Y Honda, ... Japanese Journal of Applied Physics 58 (SC), SCCB24, 2019 | 32 | 2019 |
| Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p–n diodes T Nakano, Y Harashima, K Chokawa, K Shiraishi, A Oshiyama, ... Applied Physics Letters 117 (1), 2020 | 26 | 2020 |
| Effect of dislocations on the growth of p‐type GaN and on the characteristics of p–n diodes S Usami, R Miyagoshi, A Tanaka, K Nagamatsu, M Kushimoto, M Deki, ... physica status solidi (a) 214 (8), 1600837, 2017 | 25 | 2017 |
| Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates T Hamachi, T Tohei, Y Hayashi, M Imanishi, S Usami, Y Mori, N Ikarashi, ... Journal of Applied Physics 129 (22), 2021 | 12 | 2021 |
| Effective neutron detection using vertical-type BGaN diodes T Nakano, K Mochizuki, T Arikawa, H Nakagawa, S Usami, Y Honda, ... Journal of Applied Physics 130 (12), 2021 | 11 | 2021 |
| V-shaped dislocations in a GaN epitaxial layer on GaN substrate A Tanaka, K Nagamatsu, S Usami, M Kushimoto, M Deki, S Nitta, ... AIP Advances 9 (9), 2019 | 11 | 2019 |
| Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates T Hamachi, T Tohei, Y Hayashi, M Imanishi, S Usami, Y Mori, A Sakai Scientific Reports 13 (1), 2436, 2023 | 10 | 2023 |
| Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy J Takino, T Sumi, Y Okayama, A Kitamoto, S Usami, M Imanishi, ... Japanese Journal of Applied Physics 60 (9), 095501, 2021 | 10 | 2021 |
| Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method J Yamada, S Usami, Y Ueda, Y Honda, H Amano, T Maruyama, ... Japanese Journal of Applied Physics 58 (4), 040904, 2019 | 10 | 2019 |
| Determination of the electron trap level in Fe-doped GaN by phonon-assisted conduction phenomenon H Fukuda, A Nagakubo, S Usami, M Ikeda, M Imanishi, M Yoshimura, ... Applied Physics Express 15 (7), 071003, 2022 | 6 | 2022 |
| Reduction of dislocations in GaN on silicon substrate using In situ etching K Matsumoto, T Ono, Y Honda, T Yamamoto, S Usami, M Kushimoto, ... physica status solidi (b) 255 (5), 1700387, 2018 | 6 | 2018 |
| Evidence for solution-mediated phase transitions in kidney stones: Phase Transition exacerbates kidney Stone Disease M Maruyama, Y Tanaka, K Momma, Y Furukawa, HY Yoshikawa, R Tajiri, ... Crystal Growth & Design 23 (6), 4285-4293, 2023 | 5 | 2023 |
| Effects of pulse duration on laser-induced crystallization of urea from 300 to 1200 fs: impact of cavitation bubbles on crystal nucleation Y Tsuri, M Maruyama, K Tsukamoto, H Adachi, K Takano, S Usami, ... Applied Physics A 128 (9), 803, 2022 | 4 | 2022 |
| Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy Z Liu, S Nitta, S Usami, Y Robin, M Kushimoto, M Deki, Y Honda, ... Journal of Crystal Growth 509, 50-53, 2019 | 4 | 2019 |
| Electrical and thermal analysis of vertical GaN-on-GaN PN diodes L Yates, G Pavlidis, S Graham, S Usami, K Nagamatsu, Y Honda, ... 2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2018 | 4 | 2018 |
