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Discretely tunable semiconductor lasers suitable for photonic integration DC Byrne, JP Engelstaedter, WH Guo, QY Lu, B Corbett, B Roycroft, ... IEEE Journal of Selected Topics in Quantum Electronics 15 (3), 482-487, 2009 | 79 | 2009 |
A novel two-section tunable discrete mode Fabry-Perot laser exhibiting nanosecond wavelength switching R Phelan, WH Guo, Q Lu, D Byrne, B Roycroft, P Lambkin, B Corbett, ... IEEE Journal of Quantum Electronics 44 (4), 331-337, 2008 | 62 | 2008 |
InP-based active and passive components for communication systems at 2 μm N Ye, MR Gleeson, MU Sadiq, B Roycroft, C Robert, H Yang, H Zhang, ... Journal of Lightwave Technology 33 (5), 971-975, 2015 | 52 | 2015 |
Practical design of lensed fibers for semiconductor laser packaging using laser welding technique JH Song, HNJ Fernando, B Roycroft, B Corbett, FH Peters Journal of lightwave technology 27 (11), 1533-1539, 2009 | 52 | 2009 |
Experimental modulation bandwidth beyond the relaxation oscillation frequency in a monolithic twin-ridge laterally coupled diode laser based on lateral mode locking H Lamela, B Roycroft, P Acedo, R Santos, G Carpintero Optics Letters 27 (5), 303-305, 2002 | 52 | 2002 |
Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates R Loi, J O'Callaghan, B Roycroft, C Robert, A Fecioru, AJ Trindade, ... IEEE Photonics Journal 8 (6), 1-10, 2016 | 50 | 2016 |
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40 Gb/s WDM transmission over 1.15-km HC-PBGF using an InP-based Mach-Zehnder modulator at 2 μm MU Sadiq, H Zhang, J O'Callaghan, B Roycroft, N Kavanagh, K Thomas, ... Journal of Lightwave Technology 34 (8), 1706-1711, 2016 | 44 | 2016 |
Size-Dependent Bandwidth of Semipolar ( ) Light-Emitting-Diodes M Haemmer, B Roycroft, M Akhter, DV Dinh, Z Quan, J Zhao, PJ Parbrook, ... IEEE Photonics Technology Letters 30 (5), 439-442, 2018 | 40 | 2018 |
200 Mbit/s data transmission through 100m of plastic optical fibre with nitride LEDs M Akhter, P Maaskant, B Roycroft, B Corbett, P De Mierry, B Beaumont, ... Electronics Letters 38 (23), 1, 2002 | 40 | 2002 |
Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices J O’Callaghan, R Loi, EE Mura, B Roycroft, AJ Trindade, K Thomas, ... Optical Materials Express 7 (12), 4408-4414, 2017 | 39 | 2017 |
A multiwavelength low-power wavelength-locked slotted Fabry–Perot laser source for WDM applications SK Mondal, B Roycroft, P Lambkin, F Peters, B Corbett, P Townsend, ... IEEE Photonics Technology Letters 19 (10), 744-746, 2007 | 38 | 2007 |
Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth M Guina, S Orsila, M Dumitrescu, M Saarinen, P Sipila, V Vilokkinen, ... IEEE Photonics Technology Letters 12 (7), 786-788, 2000 | 34 | 2000 |
Characterization of a tunable three-section slotted Fabry–Perot laser for advanced modulation format optical transmission K Shi, F Smyth, D Reid, B Roycroft, B Corbett, FH Peters, LP Barry Optics Communications 284 (6), 1616-1621, 2011 | 31 | 2011 |
Fabrication of GaN‐Based Resonant Cavity LEDs P Maaskant, M Akhter, B Roycroft, E O'Carroll, B Corbett physica status solidi (a) 192 (2), 348-353, 2002 | 29 | 2002 |
Design, characterization, and applications of index-patterned Fabry–Pérot Lasers S O’Brien, F Smyth, K Shi, J O’Carroll, PM Anandarajah, D Bitauld, ... IEEE Journal of Selected Topics in Quantum Electronics 17 (6), 1621-1631, 2011 | 28 | 2011 |
Fast wavelength switching lasers using two-section slotted Fabry–Perot structures F Smyth, E Connolly, B Roycroft, B Corbett, P Lambkin, LP Barry IEEE photonics technology letters 18 (20), 2105-2107, 2006 | 27 | 2006 |
Experimental Characterisation of GaN‐Based Resonant Cavity Light Emitting Diodes B Roycroft, M Akhter, P Maaskant, P De Mierry, S Fernandez, FB Naranjo, ... physica status solidi (a) 192 (1), 97-102, 2002 | 27 | 2002 |