| Adaptive step size incremental conductance based maximum power point tracking (mppt) E Kim, M Warner, I Bhattacharya 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 2335-2339, 2020 | 25 | 2020 |
| N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates E Kim, Z Zhang, J Encomendero, J Singhal, K Nomoto, A Hickman, ... Applied Physics Letters 122 (9), 2023 | 23 | 2023 |
| Material selection method for a perovskite solar cell design based on the genetic algorithm E Kim, I Bhattacharya 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 2631-2634, 2020 | 12 | 2020 |
| High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0. 85Ga0. 15N heterostructures on single-crystal AlN substrates Z Zhang, J Encomendero, E Kim, J Singhal, YJ Cho, K Nomoto, M Toita, ... Applied Physics Letters 121 (8), 2022 | 11 | 2022 |
| AlN/AlGaN/AlN quantum well channel HEMTs J Singhal, E Kim, A Hickman, R Chaudhuri, Y Cho, HG Xing, D Jena Applied Physics Letters 122 (22), 2023 | 9 | 2023 |
| Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates Z Zhang, J Singhal, S Agrawal, E Kim, V Protasenko, M Toita, HG Xing, ... Applied Physics Letters 122 (21), 2023 | 9 | 2023 |
| Using both faces of polar semiconductor wafers for functional devices L van Deurzen, E Kim, N Pieczulewski, Z Zhang, A Feduniewicz-Zmuda, ... Nature, 1-7, 2024 | 3 | 2024 |
| RF operation of AlN/Al0. 25Ga0. 75N/AlN HEMTs with f T/f max of 67/166 GHz E Kim, J Singhal, A Hickman, L Li, R Chaudhuri, Y Cho, JCM Hwang, ... Applied Physics Express 16 (11), 111003, 2023 | 2 | 2023 |
| Ferroelectric AlBN films by molecular beam epitaxy C Savant, V Gund, K Nomoto, T Maeda, S Jadhav, J Lee, M Ramesh, ... Applied Physics Letters 125 (7), 2024 | 1 | 2024 |
| AlN/GaN/AlN HEMTs on bulk AlN substrates with high drain current density> 2.8 A/mm and average breakdown field> 2 MV/cm E Kim, YH Chen, J Encomendero, D Jena, HG Xing 2024 Device Research Conference (DRC), 1-2, 2024 | 1 | 2024 |
| Publisher Correction: Using both faces of polar semiconductor wafers for functional devices L van Deurzen, E Kim, N Pieczulewski, Z Zhang, A Feduniewicz-Zmuda, ... Nature, 1-1, 2024 | | 2024 |
| Dualtronics: leveraging both faces of polar semiconductors L van Deurzen, E Kim, N Pieczulewski, Z Zhang, A Feduniewicz-Zmuda, ... arXiv preprint arXiv:2404.03733, 2024 | | 2024 |
| First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates E Kim, Z Zhang, J Singhal, K Nomoto, A Hickman, M Toita, D Jena, ... 2022 Device Research Conference (DRC), 1-2, 2022 | | 2022 |
| High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al Z Zhang, J Encomendero, E Kim | | 2022 |
| * WINNER* Adaptive Step Size Incremental Conductance Based Maximum Power Point Tracking E Kim Proceedings of Student Research and Creative Inquiry Day 4, 2020 | | 2020 |
