| A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs G Romano, A Fayyaz, M Riccio, L Maresca, G Breglio, A Castellazzi, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 978-987, 2016 | 264 | 2016 |
| SiC power MOSFETs performance, robustness and technology maturity A Castellazzi, A Fayyaz, G Romano, L Yang, M Riccio, A Irace Microelectronics Reliability 58, 164-176, 2016 | 139 | 2016 |
| Short-circuit failure mechanism of SiC power MOSFETs G Romano, L Maresca, M Riccio, V d'Alessandro, G Breglio, A Irace, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 102 | 2015 |
| Short-circuit robustness of SiC power MOSFETs: Experimental analysis A Castellazzi, A Fayyaz, L Yang, M Riccio, A Irace 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 81 | 2014 |
| Transient robustness testing of silicon carbide (SiC) power MOSFETs A Fayyaz, L Yang, A Castellazzi 2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013 | 73 | 2013 |
| UIS failure mechanism of SiC power MOSFETs A Fayyaz, A Castellazzi, G Romano, M Riccio, A Irace, J Urresti, N Wright 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 60 | 2016 |
| Statistical analysis of the electrothermal imbalances of mismatched parallel SiC power MOSFETs A Borghese, M Riccio, A Fayyaz, A Castellazzi, L Maresca, G Breglio, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019 | 56 | 2019 |
| A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs A Fayyaz, G Romano, J Urresti, M Riccio, A Castellazzi, A Irace, N Wright Energies 10 (4), 452, 2017 | 50 | 2017 |
| High temperature pulsed-gate robustness testing of SiC power MOSFETs A Fayyaz, A Castellazzi Microelectronics Reliability 55 (9-10), 1724-1728, 2015 | 46 | 2015 |
| Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs A Fayyaz, L Yang, M Riccio, A Castellazzi, A Irace Microelectronics Reliability 54 (9-10), 2185-2190, 2014 | 45 | 2014 |
| Characterization of high-voltage SiC MOSFETs under UIS avalanche stress L Yang, A Fayyaz, A Castellazzi 7th IET International Conference on Power Electronics, Machines and Drives …, 2014 | 45 | 2014 |
| Body diode reliability investigation of SiC power MOSFETs A Fayyaz, G Romano, A Castellazzi Microelectronics Reliability 64, 530-534, 2016 | 38 | 2016 |
| Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs G Romano, M Riccio, L Maresca, G Breglio, A Irace, A Fayyaz, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 34 | 2016 |
| Single pulse short-circuit robustness and repetitive stress aging of GaN GITs A Castellazzi, A Fayyaz, S Zhu, T Oeder, M Pfost 2018 IEEE International Reliability Physics Symposium (IRPS), 4E. 1-1-4E. 1-10, 2018 | 31 | 2018 |
| Avalanche ruggedness of parallel SiC power MOSFETs A Fayyaz, B Asllani, A Castellazzi, M Riccio, A Irace Microelectronics Reliability 88, 666-670, 2018 | 30 | 2018 |
| Transient out-of-SOA robustness of SiC power MOSFETs A Castellazzi, A Fayyaz, G Romano, M Riccio, A Irace, J Urresti-Ibanez, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2A-3.1-2A-3.8, 2017 | 30 | 2017 |
| Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs A Fayyaz, A Castellazzi, G Romano, M Riccio, A Irace, J Urresti, N Wright 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 24 | 2017 |
| SiC MOSFETs soft and hard failure modes: functional analysis and structural characterization F Richardeau, F Boige, A Castellazzi, V Chazal, A Fayyaz, A Borghese, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 22 | 2020 |
| VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate B Asllani, A Castellazzi, OA Salvado, A Fayyaz, H Morel, D Planson 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 20 | 2019 |
| An efficient simulation methodology to quantify the impact of parameter fluctuations on the electrothermal behavior of multichip SiC power modules A Borghese, AP Catalano, M Riccio, L Codecasa, A Fayyaz, ... Materials Science Forum 963, 855-858, 2019 | 19 | 2019 |
prof. Andrea IraceUniversity of Naples Federico II在 unina.it 的电子邮件经过验证
