| Method for forming a semiconductor device structure comprising a gate fill metal Q Xie, C Zhu, K Shrestha, P Calka, O Madia, JW Maes, ME Givens US Patent 10,607,895, 2020 | 341 | 2020 |
| Method for forming a semiconductor device structure and related semiconductor device structures Q Xie, C Zhu, K Shrestha, P Calka, O Madia, JW Maes, ME Givens US Patent App. 16/834,657, 2020 | 249 | 2020 |
| Selective PEALD of oxide on dielectric E Tois, V Pore, S Haukka, T Suzuki, L Jia, SJ Kim, O Madia US Patent 11,170,993, 2021 | 207 | 2021 |
| Ultra-low-k cyclic carbon-bridged PMO films with a high chemical resistance F Goethals, I Ciofi, O Madia, K Vanstreels, MR Baklanov, C Detavernier, ... Journal of Materials Chemistry 22 (17), 8281-8286, 2012 | 57 | 2012 |
| Intrinsic electron traps in atomic-layer deposited HfO2 insulators F Cerbu, O Madia, DV Andreev, S Fadida, M Eizenberg, L Breuil, ... Applied Physics Letters 108 (22), 2016 | 54 | 2016 |
| Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn S Gupta, E Simoen, R Loo, O Madia, D Lin, C Merckling, Y Shimura, ... ACS applied materials & interfaces 8 (21), 13181-13186, 2016 | 29 | 2016 |
| Spectroscopy of deep gap states in high-k insulators VV Afanas' ev, WC Wang, F Cerbu, O Madia, M Houssa, A Stesmans ECS Transactions 64 (8), 17, 2014 | 21 | 2014 |
| Plasma enhanced deposition processes for controlled formation of oxygen containing thin films L Jia, VJ Pore, M Tuominen, SJ Kim, O Madia US Patent 11,158,500, 2021 | 14 | 2021 |
| Improved Methodology for Integrated -Value Extractions I Ciofi, G Borrello, O Madia, CJ Wilson, B Vereecke, GP Beyer IEEE transactions on electron devices 59 (6), 1607-1613, 2012 | 7 | 2012 |
| Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1− x/SiO2/(1 0 0) Si structures with nm-thin GexSi1− x layers O Madia, APD Nguyen, NH Thoan, V Afanas’ev, A Stesmans, L Souriau, ... Applied surface science 291, 11-15, 2014 | 5 | 2014 |
| Saturation Photo-Voltage Methodology for Semiconductor/Insulator Interface Trap Spectroscopy O Madia, VV Afanas' ev, D Cott, H Arimura, C Schulte-Braucks, HC Lin, ... ECS Journal of Solid State Science and Technology 5 (4), P3031, 2015 | 3 | 2015 |
| Experimental characterization of BTI defects B Kaczer, VV Afanas' ev, K Rott, F Cerbu, J Franco, W Goes, T Grasser, ... 2013 International Conference on Simulation of Semiconductor Processes and …, 2013 | 3 | 2013 |
| Atomic layer deposition of indium gallium zinc oxide O Madia, A Illiberi, ME Givens, T Ivanova, C Dezelah, V Sharma US Patent 11,664,222, 2023 | 2 | 2023 |
| Selective deposition of SiOC thin films JW Maes, DK De Roest, O Madia US Patent 11,139,163, 2021 | 2 | 2021 |
| Selective deposition of SiOC thin films JW Maes, DK De Roest, O Madia US Patent 11,664,219, 2023 | 1 | 2023 |
| Germanium-related deep electron traps in ALD-grown HfO2 insulators studied through Exhaustive PhotoDepopulation Spectroscopy O Madia, VV Afanas’ev, JA Kittl, WK Hong, SS Kim, HY Lee, S Kim, ... Microelectronic Engineering 147, 188-191, 2015 | 1 | 2015 |
| Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1−x/SiO2 heterostructures investigated by positron annihilation spectroscopy O Madia, N Segercrantz, V Afanas' ev, A Stesmans, L Souriau, J Slotte, ... physica status solidi (b) 251 (11), 2211-2215, 2014 | 1 | 2014 |
| Semiconductor device and fabrication method thereof O Madia, G Vellianitis, G Doornbos, MJH Van Dal US Patent 12,002,860, 2024 | | 2024 |
| Method for forming a semiconductor device structure and related semiconductor device structures Q Xie, C Zhu, K Shrestha, P Calka, O Madia, JW Maes, ME Givens US Patent App. 18/522,867, 2024 | | 2024 |
| Memory device and method of fabricating the same MJH Van Dal, G Vellianitis, G Doornbos, O Madia US Patent App. 18/152,160, 2024 | | 2024 |
