| Record low metal—(CVD) graphene contact resistance using atomic orbital overlap engineering A Meersha, HB Variar, K Bhardwaj, A Mishra, S Raghavan, N Bhat, ... 2016 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2016 | 37 | 2016 |
| Chalcogen-assisted enhanced atomic orbital interaction at TMD–Metal interface and sulfur passivation for overall performance boost of 2-D TMD FETs J Kumar, G Sheoran, HB Variar, R Mishra, H Kuruva, A Meersha, A Mishra, ... IEEE Transactions on Electron Devices 67 (2), 717-724, 2020 | 15 | 2020 |
| Terahertz photodetection in scalable single-layer-graphene and hexagonal boron nitride heterostructures M Asgari, L Viti, O Balci, SM Shinde, J Zhang, H Ramezani, S Sharma, ... Applied Physics Letters 121 (3), 2022 | 10 | 2022 |
| Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition A Ansh, U Patbhaje, J Kumar, A Meersha, M Shrivastava Communications Materials 4 (1), 8, 2023 | 8 | 2023 |
| Carbon vacancy assisted contact resistance engineering in graphene FETs J Kumar, A Meersha, HB Variar, A Mishra, M Shrivastava IEEE Transactions on Electron Devices 69 (4), 2066-2073, 2022 | 8 | 2022 |
| On the ESD behavior of large-area CVD graphene transistors: Physical insights and technology implications KK Nagothu, A Mishra, A Meersha, M Shrivastava IEEE Transactions on Electron Devices 66 (1), 743-751, 2018 | 6 | 2018 |
| A systematic study on the hysteresis behaviour and reliability of MoS2 FET A Meersha, B Sathyajit, M Shrivastava 2017 30th international conference on VLSI design and 2017 16th …, 2017 | 6 | 2017 |
| Electrically tunable nonlinearity at 3.2 terahertz in single-layer graphene A Di Gaspare, O Balci, J Zhang, A Meersha, SM Shinde, L Li, AG Davies, ... ACS photonics 10 (9), 3171-3180, 2023 | 5 | 2023 |
| First demonstration and physical insights into time-dependent breakdown of graphene channel and interconnects A Mishra, A Meersha, NK Kranthi, K Trivedi, HB Variar, NSV Bellamkonda, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 5 | 2019 |
| Mapping the complex refractive index of single layer graphene on semiconductor or polymeric substrates at terahertz frequencies V Pistore, O Balci, J Zhang, SM Schinde, A Meersha, AC Ferrari, ... 2D Materials 9 (2), 025018, 2022 | 4 | 2022 |
| Unveiling unintentional fluorine doping in TMDs during the reactive ion etching: Root cause analysis, physical insights, and solution K Hemanjaneyulu, A Meersha, J Kumar, M Shrivastava IEEE Transactions on Electron Devices 69 (4), 1956-1963, 2022 | 4 | 2022 |
| Observing non-equilibrium state of transport through graphene channel at the nano-second time-scale A Mishra, A Meersha, S Raghavan, M Shrivastava Applied Physics Letters 111 (26), 2017 | 4 | 2017 |
| Unified Mechanism for Graphene FET’s Electrothermal Breakdown and Its Implications on Safe Operating Limits A Mishra, A Meersha, NK Kranthi, J Kumar, NSV Bellamkonda, HB Variar, ... IEEE Transactions on Electron Devices 68 (5), 2530-2537, 2021 | 3 | 2021 |
| A first principle insight into defect assisted contact engineering at the metal-graphene and metal-phosphorene interfaces J Kumar, A Meersha, M Shrivastava 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 3 | 2019 |
| Defect-assisted safe operating area limits and high current failure in graphene fets NK Kranthi, A Mishra, A Meersha, HB Variar, M Shrivastava 2018 IEEE International Reliability Physics Symposium (IRPS), 3E. 1-1-3E. 1-5, 2018 | 3 | 2018 |
| Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices A Meersha, J Kumar, A Mishra, HB Variar, M Shrivastava IEEE Electron Device Letters 44 (4), 666-669, 2023 | 1 | 2023 |
| Comprehensive Computational Modelling Approach for Graphene FETs K Hemanjaneyulu, M Khaneja, A Meersha, HB Variar, M Shrivastava 2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2018 | 1 | 2018 |
| Nature of Electrically Induced Defects in CVD-grown Monolayer MoS2 A Ansh, U Patbhaje, J Kumar, A Meersha, M Shrivastava | | 2022 |
| On the ESD Reliability Issues in Carbon Electronics: Graphene and Carbon Nano Tubes NK Kranthi, A Mishra, A Meersha, M Shrivastava 2018 31st International Conference on VLSI Design and 2018 17th …, 2018 | | 2018 |
| Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs-Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs JK Ansh, G Sheoran, HB Variar, RK Mishra, H Kuruva, A Meersha, ... | | |
