| Novel layout technique for N-hit single-event transient mitigation via source-extension J Chen, S Chen, Y He, Y Chi, J Qin, B Liang, B Liu IEEE Transactions on Nuclear Science 59 (6), 2859-2866, 2012 | 57 | 2012 |
| Synthesis of carbon nanowall by plasma-enhanced chemical vapor deposition method R Liu, Y Chi, L Fang, Z Tang, X Yi Journal of nanoscience and nanotechnology 14 (2), 1647-1657, 2014 | 39 | 2014 |
| Impact of circuit placement on single event transients in 65 nm bulk CMOS technology H Yibai, C Shuming, C Jianjun, C Yaqing, L Bin, L Biwei, Q Junrui, ... IEEE Transactions on Nuclear Science 59 (6), 2772-2777, 2012 | 38 | 2012 |
| Heavy-ion-induced charge sharing measurement with a novel uniform vertical inverter chains (UniVIC) SEMT test structure P Huang, S Chen, J Chen, B Liang, Y Chi IEEE Transactions on Nuclear Science 62 (6), 3330-3338, 2015 | 35 | 2015 |
| Characterization of single-event transient pulse broadening effect in 65 nm bulk inverter chains using heavy ion microbeam Y Chi, R Song, S Shi, B Liu, L Cai, C Hu, G Guo IEEE Transactions on Nuclear Science 64 (1), 119-124, 2016 | 21 | 2016 |
| Nano-reconfigurable cells with hybrid circuits of single-electron transistors and MOSFETs B Sui, L Fang, Y Chi, C Zhang IEEE transactions on electron devices 57 (9), 2251-2257, 2010 | 21 | 2010 |
| Characterization of the effect of pulse quenching on single-event transients in 65-nm twin-well and triple-well CMOS technologies J Chen, J Yu, P Yu, B Liang, Y Chi IEEE Transactions on Device and Materials Reliability 18 (1), 12-17, 2018 | 17 | 2018 |
| PABAM: a physics-based analytical model to estimate bipolar amplification effect induced collected charge at circuit level S Ruiqiang, C Shuming, D Yankang, H Pengcheng, C Jianjun, C Yaqing IEEE Transactions on Device and Materials Reliability 15 (4), 595-603, 2015 | 17 | 2015 |
| Supply voltage and temperature dependence of single-event transient in 28-nm FDSOI MOSFETs J Xu, Y Guo, R Song, B Liang, Y Chi Symmetry 11 (6), 793, 2019 | 14 | 2019 |
| Comprehensive sensing current analysis and its guideline for the worst-case scenario of RRAM read operation Z Tang, Y Wang, Y Chi, L Fang Electronics 7 (10), 224, 2018 | 13 | 2018 |
| Characterization of single-event transient pulse quenching among dummy gate isolated logic nodes in 65 nm twin-well and triple-well CMOS technologies C Jianjun, C Shuming, C Yaqing, L Bin IEEE Transactions on Nuclear Science 62 (5), 2302-2309, 2015 | 11 | 2015 |
| Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs JJ Chen, SM Chen, B Liang, YB He, YQ Chi, KF Deng Chinese Physics B 20 (11), 114220, 2011 | 11 | 2011 |
| Characterization of single-event upsets induced by high-LET heavy ions in 16-nm bulk FinFET SRAMs C Yaqing, H Pengcheng, S Qian, L Bin, Z Zhenyu IEEE Transactions on Nuclear Science 69 (5), 1176-1181, 2021 | 10 | 2021 |
| 28nm fault-tolerant hardening-by-design frequency divider for reducing soft errors in clock and data recovery H Yuan, Y Guo, J Chen, Y Chi, X Chen, B Liang IEEE Access 7, 47955-47961, 2019 | 10 | 2019 |
| Experimental characterization of the dominant multiple nodes charge collection mechanism in metal oxide-semiconductor transistors R Song, S Chen, Y Chi, Z Wu, B Liang, J Chen, J Xu, P Hao, J Yu Applied Physics Letters 110 (23), 2017 | 10 | 2017 |
| Adsorption mechanism of SO2 on vacancy-defected graphene and Ti doped graphene: A DFT study Z Zhang, B Liang, Y Chi, Y Jiang, J Song, Y Guo Superlattices and Microstructures 159, 107036, 2021 | 9 | 2021 |
| Bulk bias as an analog single-event transient mitigation technique with negligible penalty J Liu, Q Sun, B Liang, J Chen, Y Chi, Y Guo Electronics 9 (1), 27, 2019 | 9 | 2019 |
| An SEU/SET-tolerant phase frequency detector with double-loop self-sampling technology for clock data recovery Y Hengzhou, C Jianjun, L Bin, C Yaqing, C Xi, G Yang IEEE Transactions on Nuclear Science 66 (7), 1483-1490, 2019 | 9 | 2019 |
| Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes JJ Chen, YQ Chi, B Liang Chinese Physics B 24 (1), 016102, 2015 | 9 | 2015 |
| NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n+ deep well BW Liu, JJ Chen, SM Chen, YQ Chi | 9 | 2012 |
