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| Temperature-dependent study on AlGaN-based deep ultraviolet light-emitting diode for the origin of high ideality factor Y Liao, D Li, Q Guo, Y Liu, H Wang, W Hu, ZL Wang AIP Advances 11 (10), 2021 | 13 | 2021 |
| Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs K Ji, X Cui, J Chen, Q Guo, B Jiang, B Wang, W Sun, W Hu, Q Hua Nanotechnology 32 (35), 355203, 2021 | 4 | 2021 |
| Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics X Zhou, Q Hua, W Sha, J Zhu, T Liu, C Jiang, Q Guo, L Jing, C Du, J Zhai, ... Advanced Electronic Materials, 2200941, 2023 | 1 | 2023 |
| Formation of β-Be3N2 nanocrystallites in Be-implanted GaN Y Peng, MF Saleem, W Wei, K Ji, Q Guo, Y Yue, J Chen, X Zhang, ... Materials Research Express 8 (3), 035003, 2021 | 1 | 2021 |
Xingyu ZhouUniversity of Chinese Academy of Sciences在 mails.ucas.ac.cn 的电子邮件经过验证
Xingyu ZhouUniversity of Chinese Academy of Sciences在 mails.ucas.ac.cn 的电子邮件经过验证
Ting LiuBeijing University of Chemical Technology在 mail.buct.edu.cn 的电子邮件经过验证